To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. CR5AS-12 Thyristor Medium Power Use REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Features • Non-Insulated Type • Glass Passivation Type • IT (AV) : 5 A • VDRM : 600 V • IGT : 100 µA Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 4 2, 4 3 12 3 1 1. 2. 3. 4. Cathode Anode Gate Anode Applications Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for autocycle, electric tool, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 1 of 7 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V CR5AS-12 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Symbol IT (RMS) IT (AV) Ratings 7.8 5 Unit A A ITSM 90 A I2t 33 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.26 W W V V A °C °C g Conditions Commercial frequency, sine half wave 180° conduction, Tc = 88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 220 Ω. Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 2.0 Unit mA Repetitive peak off-state current IDRM — — 2.0 mA On-state voltage VTM — — 1.8 V Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.1 — — 0.8 — V V Gate trigger current Holding current IGT IH 1 — — 3.5 100Note3 — µA mA Thermal resistance Rth (j-c) — — 3.0 °C/W Test conditions Tj = 125°C, VRRM applied, RGK = 220 Ω Tj = 125°C, VDRM applied, RGK = 220 Ω Tc = 25°C, ITM = 15 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM, RGK = 220 Ω Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 220 Ω Junction to caseNote2 Notes: 2. The measurement point for case temperature is at anode tab. 3. If special value of IGT is required, IGT from 20 to 100 µA is possible. (IGT item: E) REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 2 of 7 CR5AS-12 Performance Curves 102 7 Tc = 25°C 5 3 2 Rated Surge On-State Current 100 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 7 5 3 2 VFGM = 6V PGM = 0.5W PG(AV) = 0.1W VGT = 0.8V IGT = 100µA IFGM = 0.3A (Tj = 25°C) 7 VGD = 0.1V 5 -2 10 23 5710-1 23 57 100 23 57 10123 57102 23 20 10 2 3 4 5 7 101 2 3 4 5 7 102 × 100 (%) 103 7 5 3 2 #1 #2 Typical Example IGT(25°C) #1 11µA #2 61µA 102 7 5 3 2 101 7 5 3 V = 6V 2 D RL = 60Ω 100 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Tj = 25°C Gate Trigger Voltage (V) 30 Gate Current (mA) 1.0 0.9 0.7 40 Gate Trigger Current vs. Junction Temperature –1 0.8 50 Gate Characteristics Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 100 60 Conduction Time (Cycles at 60Hz) Distribution Typical Example 0.6 0.5 0.4 0.3 0.2 0.1 0 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) 7 5 3 2 70 On-State Voltage (V) 102 101 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 7 5 3 2 90 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 Junction to ambient 102 7 5 3 2 101 7 5 3 2 Junction to case 100 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 Time (s) CR5AS-12 Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 14 90° 120° 12 60° 10 8 6 θ = 30° θ 4 360° 2 0 160 180° Case Temperature (°C) Average Power Dissipation (W) 16 1 2 3 4 5 6 7 Resistive, inductive loads 100 80 60 40 0 8 θ = 30° 90° 0 1 2 3 180° 120° 4 5 6 7 8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 θ = 30° 40 60° 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature (°C) 160 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 θ = 30° 60° 90° 20 120° 180° 0 0 2 1 Aluminum Board 80×80×t2.3 40 3 4 5 6 8 7 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 16 160 14 140 θ 120 360° Resistive loads θ 12 θ Case Temperature (°C) Ambient Temperature (°C) 360° 60° 160 Average Power Dissipation (W) θ 120 20 Resistive, inductive loads 0 140 180° 360° 10 Resistive loads 8 90° θ = 30° 60° 120° 6 4 2 0 100 80 60 40 θ = 30° 20 0 1 2 3 4 5 6 7 Average On-State Current (A) REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 4 of 7 8 θ 0 0 1 2 60° 90° 120° 180° 3 4 5 6 7 Average On-State Current (A) 8 CR5AS-12 160 140 140 θ 360° Resistive loads Natural convection 100 80 60 θ = 30° 60° 40 90° 120° 20 180° 0 θ Resistive loads Natural convection 100 80 θ = 30° 60° 90° 120° 180° 60 40 20 0 1 2 3 4 5 6 7 Average On-State Current (A) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance Typical Example RGK = 220Ω 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 140 θ 360° Average On-State Current (A) 160 160 Aluminum Board 80×80×t2.3 120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 220Ω) × 100 (%) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) θ 120 Ambient Temperature (°C) 160 0 Breakover Voltage (dv/dt = vV/µs) Breakover Voltage (dv/dt = 1V/µs) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 103 7 Typical Example 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7 101 Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example 8 Tj = 125°C Junction Temperature (°C) 102 Tj = 125°C RGK = 220Ω 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Rise of Off-State Voltage (V/µs) REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 5 of 7 Holding Current (mA) Ambient Temperature (°C) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 7 5 4 3 2 Distribution Typical Example 101 7 5 4 3 2 100 7 5 4 3 VD = 12V 2 RGK = 220Ω 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) 400 Typical Example IGT(25°C) IH(220Ω) 350 14µA 1.7mA #1 48µA 2.7mA 300 # 2 Tj = 25°C 250 #1 200 #2 150 100 50 0 -2 10 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 Gate to Cathode Resistance (kΩ) Gate Trigger Current (tw) Gate Trigger Current (DC) × 100 (%) Gate Trigger Current vs. Gate Current Pulse Width 104 7 5 3 2 103 7 5 3 2 #1 #2 102 7 5 V = 6V 3 D 2 RL = 60Ω Ta = 25°C 101 0 10 2 3 4 5 7 101 Typical Example IGT(DC) #1 11µA #2 61µA 2 3 4 5 7 102 Gate Current Pulse Width (µs) REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 6 of 7 Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) × 100 (%) Holding Current vs. Gate to Cathode Resistance × 100 (%) CR5AS-12 Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) CR5AS-12 Package Dimensions Previous Code 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Tube Quantity 3000 75 Standard order code Type name – T +Direction (1 or 2) +3 Type name Note : Please confirm the specification about the shipping in detail. REJ03G0345-0300 Rev.3.00 Dec 19, 2008 Page 7 of 7 Standard order code example CR5AS-12-T13 CR5AS-12 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2008. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.2