To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. 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Preliminary H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Features • Low on-resistance RDS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) : PRSS0004AE-B : LDPAK (S)-(1) ) 4 4 1 1 2 3 : PRSS0004AE-C : LDPAK (S)-(2) ) 2 4 1 3 H7N1002LS D 1. Gate 2. Drain 3. Source 4. Drain G 2 3 H7N1002LM H7N1002LD S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 1 of 8 Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Value 100 ±20 75 300 75 Unit V V A A A IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg 50 166 100 150 –55 to +150 A mJ W °C °C H7N1002LD, H7N1002LS, H7N1002LM Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) Static drain to source on state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 2 of 8 tf VDF trr Min 100 ±20 — — 1.5 — — 57 — — — — — — — — — Typ — — — — — 8 10 95 9700 740 330 155 35 33 43 245 130 Max — — ±10 10 2.5 10 15 — — — — — — — — — — Unit V V μA μA V mΩ mΩ S pF pF pF nC nC nC ns ns ns — — — 25 0.93 70 — — — ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 37.5 A, VGS = 10 V Note 4 ID = 37.5 A, VGS = 4.5 V Note 4 ID = 37.5 A, VDS = 10 V Note 4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 75 A VGS = 10 V, ID = 37.5 A RL = 0.8 Ω Rg = 4.7 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/dt = 100 A/μs H7N1002LD, H7N1002LS, H7N1002LM Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 150 100 50 ID (A) 300 100 Drain Current Channel Dissipation Pch (W) 200 10 0 0 50 100 150 Case Temperature 200 1 30 DC Operation (Tc = 25°C) 3 PW = 10 ms 1 Operation in (1shot) 0.3 this area is limited by RDS(on) 0.1 Ta = 25°C 0.03 0.1 0.3 1 3 10 30 Drain to Source Voltage Tc (°C) Typical Output Characteristics VDS = 10 V Pulse Test 3.6 V 40 Pulse Test 40 30 Drain Current Drain Current VDS (V) 50 10 V 4V 30 3.4 V 20 10 VGS = 3 V 20 Tc = 75°C 25°C 10 –25°C 0 0 0 2 4 6 Drain to Source Voltage 8 0 10 Pulse Test 0.8 0.6 ID = 50 A 0.4 20 A 0.2 10 A 0 0 5 10 15 20 Gate to Source Voltage VGS (V) REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 3 of 8 2 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) 1.0 1 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 100 300 Typical Transfer Characteristics ID (A) ID (A) 50 1 10 0 μs 0 m μs s 50 Pulse Test 20 VGS = 4.5 V 10 10 V 5 2 1 0.5 2 5 10 20 50 Drain Current ID (A) 100 200 H7N1002LD, H7N1002LS, H7N1002LM Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 40 Pulse Test 32 50 A 24 ID = 10 A, 20 A 16 VGS = 4.5 V 50 A 8 10 A, 20 A 10 V 0 –40 0 40 80 120 Case Temperature 160 200 100 Tc = –25°C 10 25°C 1 75°C 0.1 VDS = 10 V Pulse Test 0.02 0.01 Tc (°C) 100 20000 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10 Typical Capacitance vs. Drain to Source Voltage 100 50 20 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0.1 Ciss 5000 2000 1000 Coss 500 200 Crss 100 50 VGS = 0 f = 1 MHz 20 0.3 1 3 10 Reverse Drain Current 30 100 0 10 160 16 VDD = 25 V 50 V 80 V 120 12 VDS 80 8 40 4 VDD = 80 V 50 V 25 V 0 0 80 160 240 320 Gate Charge Qg (nc) REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 4 of 8 40 50 0 400 1000 Switching Time t (ns) VGS VGS (V) 20 ID = 75 A 30 Switching Characteristics Gate to Source Voltage 200 20 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics VDS (V) 1 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Drain to Source Voltage 0.1 300 tr td(off) 100 td(on) 30 tf 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % Rg = 4.7 Ω 0.3 1 3 Drain Current 10 30 ID (A) 100 H7N1002LD, H7N1002LS, H7N1002LM Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 100 80 10 V 60 40 VGS = 0, –5 V 5V 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 200 IAP = 50 A VDD = 25 V duty < 0.1 % Rg ≥ 50 Ω 160 120 80 40 0 25 VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 θch – c (t) = γ s (t) • θch – c 0.1 0.1 θch – c = 1.25°C/W, Tc = 25°C 0.05 PDM 0 .0 2 0.03 0 .0 1 t ho 1s 0.01 10 μ D= lse pu PW T PW T 100 μ 1m 10 m 100 m 10 1 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin 15 V 50 Ω 0 REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 5 of 8 VDD H7N1002LD, H7N1002LS, H7N1002LM Preliminary Switching Time Test Circuit 90% Vout Monitor Vin Monitor D.U.T. Rg Waveform Vin Vout Vin 10 V 10% RL VDS = 30 V 10% 90% td(on) REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 6 of 8 10% tr 90% td(off) tf H7N1002LD, H7N1002LS, H7N1002LM Preliminary Package Dimensions RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 Previous Code LDPAK(L) / LDPAK(L)V Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g (1.5) 10.0 2.54 ± 0.5 REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 7 of 8 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code ⎯ (1.4) Package Name LDPAK(L) 2.2 H7N1002LD, H7N1002LS, H7N1002LM JEITA Package Code ⎯ RENESAS Code PRSS0004AE-C Previous Code LDPAK(S)-(2) / LDPAK(S)-(2)V MASS[Typ.] 1.35g 7.8 6.6 (2.3) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(2) Preliminary 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 5.0 +– 0.5 1.3 ± 0.2 Ordering Information Part Name H7N1002LD-E H7N1002LSTL-E H7N1002LMTL-E Quantity 500 pcs 1000 pcs 1000 pcs REJ03G1131-0800 Rev.8.00 Nov 13, 2009 Page 8 of 8 Shipping Container Box (Conductive Sack) Taping Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. 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