RENESAS RJK4514DPK_10

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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
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4.
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All information included in this document is current as of the date this document is issued. Such information, however, is
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RJK4514DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1514-0200
Rev.2.00
Feb 15, 2010
Features
 Low on-resistance
RDS(on) = 0.25  typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
1
2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
REJ03G1514-0200 Rev.2.00 Feb 15, 2010
Page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Note2
Pch
ch-c
Tch
Tstg
Ratings
450
30
22
66
22
66
5
1.4
Unit
V
V
A
A
A
A
A
mJ
150
0.833
150
–55 to +150
W
C/W
C
C
RJK4514DPK
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
RDS(on)
450
—
—
3.0
—
—
—
—
—
0.25
—
1
±0.1
4.5
0.30
V
A
A
V

ID = 10 mA, VGS = 0
VDS = 450 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 11 A, VGS = 10 V Note4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
—
—
—
—
—
—
—
—
—
—
—
—
1800
200
27
35
58
95
44
46
10
22
0.99
340
—
—
—
—
—
—
—
—
—
—
1.65
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
VDS = 25 V
VGS = 0
f = 1 MHz
Notes: 4. Pulse test
REJ03G1514-0200 Rev.2.00 Feb 15, 2010
Page 2 of 6
Test conditions
ID = 11 A
VGS = 10 V
RL = 20.5 
Rg = 10 
VDD = 360 V
VGS = 10 V
ID = 22 A
IF = 22 A, VGS = 0 Note4
IF = 22 A, VGS = 0
diF/dt = 100 A/s
RJK4514DPK
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
50
Tc = 25°C
1 shot
Ta = 25°C
Pulse Test
10
µs
100
PW
=
10
10
0
Drain Current ID (A)
Drain Current ID (A)
1000
µs
1
Operation in this
area is limited by
RDS(on)
0.1
8V
40
7V
6.5 V
10 V
30
6V
20
5.5 V
10
VGS = 5 V
0.01
0.1
1
10
100
4
8
12
16
20
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
VDS = 10 V
Pulse Test
10
Tc = 75°C
1
25°C
−25°C
0.1
0.01
0
2
4
6
8
1
0.1
VGS = 10 V
Ta = 25°C
Pulse Test
0.01
10
1
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.8
VGS = 10 V
Pulse Test
0.6
ID = 22 A
0.4
5.5 A
11 A
0.2
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
REJ03G1514-0200 Rev.2.00 Feb 15, 2010
Page 3 of 6
Reverse Recovery Time trr (ns)
Drain Current ID (A)
0
Drain to Source Voltage VDS (V)
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
1000
1000
100
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
1
10
100
Reverse Drain Current IDR (A)
RJK4514DPK
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
Coss
100
Crss
10
0
50
100
150
200
Reverse Drain Current IDR (A)
ID = 22 A
Ta = 25 °C
600
16
VGS
12
VDD = 360 V
200 V
100 V
400 VDS
8
200
4
VDD = 360 V
200 V
100 V
16
32
48
0
64
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
50
VGS = 0
Ta = 25 °C
40 Pulse Test
30
20
10
0
800
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1514-0200 Rev.2.00 Feb 15, 2010
Page 4 of 6
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
VGS = 0 Ta = 25°C
f = 1 MHz
5
80
VDS = 10 V
4
ID = 10 mA
1 mA
3
0.1 mA
2
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Gate to Source Voltage VGS (V)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
RJK4514DPK
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
0.03
0.02
1
0.0
0.01
10 µ
PDM
D=
e
uls
tp
o
h
1s
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10%
10 Ω
Vin
10 V
VDD
= 225 V
Vout
10%
10%
90%
td(on)
REJ03G1514-0200 Rev.2.00 Feb 15, 2010
Page 5 of 6
tr
90%
td(off)
tf
RJK4514DPK
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part No.
RJK4514DPK-00-T0
Quantity
360 pcs
REJ03G1514-0200 Rev.2.00 Feb 15, 2010
Page 6 of 6
Shipping Container
Box (Tube)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
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have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
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(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
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damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
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any other inquiries.
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Colophon .7.2