Preliminary Data Sheet NP50N04YUK R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 40 V – 50 A – N-channel Power MOS FET Application: Automotive Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 25 A) Non logic level drive type Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP50N04YUK-E1-AY *1 Lead Plating Pure Sn (Tin) Tape 2500 p/reel Packing Taping (E1 type) NP50N04YUK-E2-AY *1 Note: Package 8-pin HSON Taping (E2 type) *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Repetitive Avalanche Current *3 Repetitive Avalanche Energy *3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 20 50 200 97 1.0 175 –55 to +175 23 53 Unit V V A A W W °C °C A mJ Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 Mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% Copper area (35 m) *3 RG = 25 , VGS = 20 V 0 V Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 Rth(ch-C) Rth(ch-A) 1.55 150 °C/W °C/W Page 1 of 6 NP50N04YUK Preliminary Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 20 — — — — — — — — — — — — — — TYP. — — 3.0 40 3.8 2100 300 130 18 11 45 5 38 10 10 0.9 35 35 MAX. 1 100 4.0 — 4.8 3200 450 240 36 27 90 12 57 — — 1.5 — — Unit A nA V S m pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 25 A VGS = 10 V, ID = 25 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 25 A VGS = 10 V RG = 0 VDD = 32 V VGS = 10 V ID = 50 A IF = 50 A, VGS = 0 V IF = 50 A, VGS = 0 V di/dt = 100 A/s *1 Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% ID IAS 90% VDS VGS 0 BVDSS VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 Page 2 of 6 NP50N04YUK Preliminary Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 120 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 100 80 60 40 20 0 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(Pulse) = 200 A RDS(ON) Limited 100 (VGS=10 V) PW = ID(DC) = 50 A 10 0 μs Power Dissipation Limited =1 ms PW s 0m Secondary Breakdown Limited =1 1 10 PW ID - Drain Current - A 1000 0.1 0.1 DC TC = 25°C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 150°C/W 100 10 Rth(ch-C) = 1.55°C/W 1 0.1 Single pulse Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% copper area (35 μm) 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 Page 3 of 6 NP50N04YUK Preliminary 100 200 10 ID - Drain Curent - A 250 150 100 50 0 0.2 0.4 0.6 0.8 1.0 TA = –55°C 25°C 75°C 125°C 175°C 1 0.1 0.01 VGS = 10 V Pulsed 0.001 1.2 VDS = 10 V Pulsed 0 1 2 3 4 5 6 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V 0 RDS(on) - Drain to Source On-State Resistance - mΩ FORWARD TRANSFER CHARACTERISTICS 3 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 100 TA = –55°C 25°C 75°C 125°C 175°C 10 VDS = 5 V Pulsed 1 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 8 6 4 2 0 VGS = 10 V Pulsed 1 10 100 ID - Drain Current - A R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 8 6 4 2 0 ID = 25 A Pulsed 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 Preliminary DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 8 6 4 VGS = 10 V ID = 25 A Pulsed 2 0 –100 –50 0 50 100 150 1000 Coss VGS = 0 V f = 1 MHz 100 0.1 200 Crss 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 35 1000 VDD = 20 V VGS = 10 V RG = 0 Ω 100 td(off) td(on) 10 tr tf 1 0.1 1 10 30 12 VDD = 32 V 20 V 8V 25 10 8 20 VGS 15 6 4 10 5 0 100 2 VDS 0 5 10 15 20 25 30 35 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT VGS = 0 V 100 10 1 Pulsed 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 1.2 trr - Reverse Recovery Time - ns VGS = 10 V 0.1 0 40 100 1000 IF - Diode Forward Current - A Ciss VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 10000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP50N04YUK 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 NP50N04YUK Preliminary Package Drawing (Unit: mm) 8-pin HSON (Mass: 0.128 g TYP.) 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain Equivalent Circuit Drain Body Diode Gate Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1003EJ0100 Rev.1.00 Feb 08, 2013 Page 6 of 6 Revision History Rev. 1.00 Date Feb 08, 2013 NP50N04YUK Data Sheet Description Summary Page — First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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