Data Sheet μPA2765T1A N-channel MOSFET R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 30 V , 100 A , 1.3 mΩ Description The μ PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 1.3 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.9 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • 4.5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free 8-pin HVSON(6051) Ordering Information Part No. μ PA2765T1A-E2-AY∗1 LEAD PLATING Pure Sn PACKING Package 8-pin HVSON(6051) 0.1 g TYP. Tape 3000 p/reel Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 PT2 PT3 Tch Tstg IAS EAS Ratings 30 ±20 ±100 ±256 1.5 Unit V V A A W 4.6 83 150 −55 to +150 45 203 W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case(Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 1.5 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH R07DS0882EJ0102Rev.1.02 Nov 28, 2012 Page 1 of 6 μPA2765T1A Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 MIN. TYP. MAX. 10 ±100 2.5 1.3 2.9 1.2 1.0 26 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD 1.05 1.85 6550 2350 2140 40 90 190 180 152 21 55 Body Diode Forward Voltage ∗1 Reverse Recovery Time VF(S-D) trr 0.8 97 Reverse Recovery Charge Qrr 120 Drain to Source On-state Resistance ∗1 Unit μA nA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC Test Conditions VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 32 A VGS = 10 V, ID = 46 A VGS = 4.5 V, ID = 32 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 32 A, VGS = 10 V, RG = 10 Ω VDD = 15 V, VGS = 10 V, ID = 64 A V ns IF = 46 A, VGS = 0 V IF = 50 A, VGS = 0 V, nC di/dt = 100 A/μs Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 BVDSS τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 RL VDD Page 2 of 6 μPA2765T1A TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 1000 140 100 i te Lim n) ( o 0V S RD S=1 VG 100 10 ID - Drain Current - A dT - Percentage of Rated Power - % ID(pulse)=256A 120 80 60 40 20 0 25 50 75 100 125 150 175 d 10 0m s Power Dissipation Limited 1 0.1 Tc=25°C Single Pulse 0.01 0.01 0 PW =2 00 us 1m s 10 m s 0.1 1 10 100 VDS - Drain to Source Voltage – V TC - Case Temperature - °C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W Single pulse Rth(ch-A) = 83.3 °C/W 100 10 Rth(ch-C = 1.5 °C/W 1 0.1 Rth(ch-A) : Mounted on a glass expoxy board (25.4mm x 25.4mm 0.8 mmt) 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 150 300 125 250 100 200 ID - Drain Current - A ID(DC) - Drain Current(DC) - A DRAIN CURRENT(DC) vs. CASE TEMPERATURE 75 50 25 VGS=10V VGS=4.5V 150 100 50 Pulsed 0 0 0 25 50 75 100 125 TC - Case Temperature - °C R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 150 175 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VDS - Drain to Source Voltage - V Page 3 of 6 μPA2765T1A FORWARD TRANSFER CHARACTERISTICS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 TA=150°C 75°C 25°C -55°C 10 ID - Drain Current - A VGS(off) – Gate to Source Cut-off Voltage - V 100 1 0.1 0.01 VDS = 10V Pulsed 0.001 0 1 2 3 4 5 2 1 VDS = 10V ID=1.0mA 0 -50 0 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CURRENT DRAIN CURRENT 10 TA=150°C 75°C 25°C -55°C 1 0.1 VDS = 10V Pulsed 0.01 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ FORWARD TRANSFER ADMITTANCE vs. DRAIN 100 | yfs | - Forward Transfer Admittance - S 100 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V 3.5 3.0 2.5 VGS=4.5V 2.0 1.5 VGS=10V 1.0 0.5 Pulsed 0.0 1 ID - Drain Current - A 10 CHANNEL TEMPERATURE ID=46A Pulsed 6 4 2 0 2 4 6 8 VGS - Gate to Source Voltage - V R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 10 RDS(on) - Drain to Source On-state Resistance - mΩ 10 0 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 8 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. RDS(on) - Drain to Source On-state Resistance - mΩ 50 3.0 Pulsed 2.5 VGS=4.5V ID=32A 2.0 1.5 VGS=10V ID=46A 1.0 0.5 0.0 -50 0 50 100 150 Tch - Channel Temperature - °C Page 4 of 6 μPA2765T1A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 10000 10000 Ciss Coss 1000 Crss VGS = 0V f = 1.0MHz 100 0.1 1 10 100 td(on),tr,td(off),tr – Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100000 VDD = 15V VGS=10V RG=10Ω tf 1000 td(of f ) 100 tr td(on) 10 0.1 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 12 1000 VGS=10V 100 VDD= 6V 15V 24V 8 IF - Diode Forward Current - A VGS - Gate to Source Voltage – V 10 6 4 2 ID=64A 0 0 40 80 120 QG - Gate Charge - nC R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 160 200 4.5V 10 0V 1 0.1 Pulsed 0.01 0 0.4 0.8 1.2 VF(S-D) - Source to Drain Voltage - V Page 5 of 6 μPA2765T1A Package Drawings (Unit: mm) 1.27 8pin-HVSON(6051) 1 5 +0.1 5 ±0.2 6 4 0.42 −0.05 7 3 6 ±0.2 5.15 ±0.2 8 2 0.10 S 1.0 MAX. 1 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 4.1 ±0.2 0.2 0.27 ±0.05 0 +0.05 −0 0.10 M 5.4 ±0.2 3.65 ±0.2 0.6 ±0.15 0.7 ±0.15 RENESAS Package code : PVSN0008DA-A Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0882EJ0102 Rev.1.02 Nov 28, 2012 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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