RENESAS BCR8PM-14LJ

Preliminary Datasheet
BCR8PM-14LJ
Triac
Medium Power Use
R07DS0515EJ0100
Rev.1.00
Oct 14, 2011
Features




 The Product guaranteed maximum junction
temperature 150C
 Insulated Type
 Planar Type
 UL Recognized: File No. E223904
IT (RMS) : 8 A
VDRM : 800 V(Tj=125 )
IFGTI, IRGTI, IRGT III : 30 mA
Viso: 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2
3
Applications
washing machine, inversion operation of capacitor motor, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDSM
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Voltage class
14
800
700
840
Unit
Conditions
V
V
V
Tj=125C
Tj=150C
Page 1 of 7
BCR8PM-14LJ
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2 t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 107C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta=25C AC 1 minute,
T1 T2 G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symb
ol
IDRM
Min.
Typ.
Max.
—
—
VTM
—
—
Unit
Test conditions
2.0
mA
Tj = 150C, VDRM applied
1.6
V
Tc = 25C, ITM = 12A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
4.3
—
—
V
V
C/W
V/s
V/s
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Rth (j-c)
(dv/dt)c
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Note3
Junction to case
Tj = 125C
Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =-4.0 A/ms
3.Peak off-state voltage
VD = 400 V
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR8PM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
Surge On-State Current (A)
100
Tj = 150°C
101
Tj = 25°C
100
0
1
2
3
20
101
102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
100
IFGT I IRGT I, IRGT III
VGD = 0.1V
1
3
10
2
10
104
103
Typical Example
IRGT III
102
IRGT I, IFGT I
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
40
Conduction Time (Cycles at 60Hz)
101
10
60
On-State Voltage (V)
VGM = 10V
10−1
80
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
102
102
5
103
104
100
101
4
3
2
1
0 −1
10
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR8PM-14LJ
Preliminary
No Fins
102
101
100
10−1 1
10
102
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
105
2
4
6
8
10
12
16
14
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
160
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
20
0
0
16
All fins are black painted
aluminum and greased
140
2
4
6
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
104
14
Conduction Time (Cycles at 60Hz)
160
Case Temperature (°C)
103
16
On-State Power Dissipation (W)
103
Maximum On-State Power Dissipation
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
Typical Example
105
104
103
102
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR8PM-14LJ
Preliminary
103
Latching Current vs.
Junction Temperature
Latching Current (mA)
102
0
40
T2+, G–
Typical Example
102
101
80
120
100
–40
160
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
−40
Distribution
T2+, G+
Typical Example
T2–, G–
0
40
80
120
160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
101
−40
103
Typical Example
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
I Quadrant
20
0
101
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
Typical Example
Tj = 150°C
140
120
100
80
III Quadrant
60
40
I Quadrant
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
Minimum
Characteristics
Value
100
100
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR8PM-14LJ
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj = 150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
100
100
101
102
103
Typical Example
IFGT I
IRGT I
IRGT III
102
101 0
10
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
Test Procedure II
330Ω
C0
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
R0
C0 = 0.1μF
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Page 6 of 7
BCR8PM-14LJ
Preliminary
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2±0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Ordering Information
Orderable Part Number
BCR8PM-14LJ#B00
BCR8PM-14LJ-A8#B00
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Packing
Bag
Tube
Quantity
100 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Page 7 of 7
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Colophon 1.1