Preliminary Datasheet BCR10LM-16LH Triac Medium Power Use R07DS0319EJ0100 Rev.1.00 May 18, 2011 Features • • • • • • The Product guaranteed maximum junction temperature 150°C • Planar Type • Insulated Type • UL Recognized : File No. E223904 IT (RMS) : 10 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 50 mA or 35 mA (IGT item:1) High Commutation Viso : 1800 V Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Switching mode power supply, motor control, heater control, and other general purpose AC power control applications Maximum Ratings Parameter Voltage class 16 800 960 Symbol Note1 Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 10 Unit A Surge on-state current ITSM 100 A I2 t 41.6 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage R07DS0319EJ0100 Rev.1.00 May 18, 2011 Unit V V Conditions Commercial frequency, sine full wave 360°conduction, Tc = 103°C Note3 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1 • T2 • G terminal to case Page 1 of 7 BCR10LM-16LH Preliminary Electrical Characteristics BCR10LM-16LH-1 (IGT item : 1) BCR10LM-16LH Unit Test conditions Max. 2.0 mA — 1.5 V Tj = 150°C VDRM applied Tc = 25°C, ITM = 15 A instantaneous measurement Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Parameter Symbol Repetitive peak off-state current IDRM Min. — Typ. — Max. 2.0 Min. — Typ. — On-state voltage VTM — — 1.5 — Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 — — — — — — 1.5 1.5 1.5 V V V Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 35 35 35 — — — — — — 50 50 50 mA mA mA VGD 0.2 — — 0.2 — — 0.1 — — 0.1 — — Gate non-trigger voltage Thermal resistance Rth (j-c) — — 4.1 — — 4.1 Critical-rate of decay of on-state Note4 commutating current (di/dt)c 6 — — 10 — — Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Tj = 125°C VD = 1/2 VDRM Tj = 150°C V VD = 1/2 VDRM Note3 °C/W Junction to case A/ms Tj = 125°C (dv/dt)c < 100 V/μs V Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Peak off-state voltage VD = 400 V 2. Rate of rise of off-state commutating voltage (dv/dt)c < 100 V/μs R07DS0319EJ0100 Rev.1.00 May 18, 2011 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR10LM-16LH Preliminary Performance Curves Maximum On-State Characteristics Surge On-State Current (A) 100 101 Tj = 150°C Tj = 25°C 100 1.0 1.5 2.0 2.5 3.0 3.5 Gate Voltage (V) 20 101 102 Gate Characteristics Gate Trigger Current vs. Junction Temperature PGM = 5W VGT = 1.5V PG(AV) = 0.5W IGM = 2A 100 IFGT I, IRGT I, IRGT III 10−1 VGD = 0.1V 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 40 Conduction Time (Cycles at 60Hz) 101 102 103 103 Typical Example IRGT I, IRGT III 102 IFGT I 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 –40 60 On-State Voltage (V) VGM = 10V 101 80 0 100 4.0 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 0.5 0 40 80 120 Junction Temperature (°C) R07DS0319EJ0100 Rev.1.00 May 18, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) 10 Rated Surge On-State Current 2 102 5 103 104 100 101 4 3 2 1 0 10−1 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR10LM-16LH Preliminary No Fins 102 101 100 10−1 1 10 102 6 4 2 0 2 4 6 8 10 12 16 14 Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle 120 100 80 60 40 360° Conduction Resistive, inductive loads 20 0 2 4 6 8 10 12 14 16 All fins are black painted aluminum and greased 140 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 6 4 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 8 RMS On-State Current (A) 140 0 12 360° Conduction Resistive, 10 inductive loads 0 105 Ambient Temperature (°C) Case Temperature (°C) 104 14 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (°C) 103 16 On-State Power Dissipation (W) 103 Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS0319EJ0100 Rev.1.00 May 18, 2011 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 Typical Example 105 104 103 102 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 BCR10LM-16LH Preliminary Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Latching Current vs. Junction Temperature 103 103 Typical Example Latching Current (mA) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 102 101 –40 0 40 80 120 T2+, G– Typical Example 102 101 100 160 T2+, G+ Typical Example T2–, G– –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 160 Typical Example Tj = 125°C 140 120 Typical Example Tj = 150°C 140 120 III Quadrant III Quadrant 100 100 80 80 I Quadrant I Quadrant 60 60 40 40 20 20 0 101 102 103 0 101 104 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 I Quadrant Minimum Value Typical Example Tj = 125°C, IT = 4A τ = 500μs, VD = 200V, f = 3Hz Minimum Value (IGTitem1) 100 100 III Quadrant 101 Rate of Decay of On-State Commutating Current (A/ms) R07DS0319EJ0100 Rev.1.00 May 18, 2011 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Distribution Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant 101 III Quadrant Typical Example Tj = 150°C, IT = 4A τ = 500μs, VD = 200V, f = 3Hz 100 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR10LM-16LH Preliminary Gate Trigger Current vs. Gate Current Pulse Width 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 103 Typical Example IFGT I IRGT I IRGT III 102 101 100 101 102 Junction Temperature (°C) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R0 = 100Ω R1 = 47 to 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0319EJ0100 Rev.1.00 May 18, 2011 Page 6 of 7 BCR10LM-16LH Preliminary Package Dimension Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number BCR10LM-16LH#B00 BCR10LM-16LH-1#B00 BCR10LM-16LH-A8#B00 BCR10LM-16LH-1A8#B00 Packing Tube Tube Tube Tube Quantity 50 pcs. 50 pcs. 50 pcs. 50 pcs. Remark Straight type Straight type, IGT item:1 A8 Lead form A8 Lead form, IGT item:1 Note : Please confirm the specification about the shipping in detail. R07DS0319EJ0100 Rev.1.00 May 18, 2011 Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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