Preliminary Datasheet BCR5CM-12LB R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 600V - 5A - Triac Medium Power Use Features Non-Insulated Type Planar Passivation Type IT(RMS) : 5 A VDRM : 600 V IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6 Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 2, 4 3 1 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 2 3 Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter Voltage class 12 600 720 Symbol VDRM VDSM Unit V V Symbol Ratings Unit RMS on-state current IT(RMS) 5 A Commercial frequency, sine full wave Note3 360° conduction, Tc = 128°C Surge on-state current ITSM 50 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t 10.4 A2s PGM PG(AV) VGM IGM Tj Tstg — 3 0.3 10 2 – 40 to +150 – 40 to +150 2.1 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 7 BCR5CM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage I II III I II III Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.8 Unit mA V VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD — — — — — — 0.2/0.1 — — — — — — — 1.5 1.5 1.5 20Note6 20Note6 20Note6 — V V V mA mA mA V Notes: 1. 2. 3. 4. 5. 6. Tc = 25°C, ITM = 7 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 Rth(j-c) — — 3.0 °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 5/1 — — V/s Tj = 125°C/150°C Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Test conditions Tj = 150°C, VDRM applied Gate open. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 2.5 A/ms 3. Peak off-state voltage VD = 400 V R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR5CM-12LB Preliminary Performance Curves 100 7 5 90 Surge On-State Current (A) 102 3 2 101 Tj = 150°C 7 5 3 2 100 7 5 Tj = 25°C 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Voltage (V) 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 5 3 2 VGM = 10V 101 7 5 3 V = 1.5V 2 GT 100 7 5 3 2 80 0 100 4.0 PG(AV) = 0.3W PGM = 3W IGM = 2A IGT = 20mA 10–1 7 VGD = 0.1V 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10–1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current 103 7 5 3 2 Typical Example IRGT III IRGT I 102 7 5 3 2 IFGT I 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR5CM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current 160 7 140 6 360° Conduction Resistive, 5 inductive loads 4 3 2 1 0 0 1 2 4 5 6 7 8 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 3 2 4 5 6 8 7 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 140 120 × 120 × t2.3 120 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 1 2 3 4 5 6 7 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 8 0 0.5 1.0 1.5 2.0 3.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 5 3 2 Typical Example Holding Current (mA) Ambient Temperature (°C) 3 Curves apply regardless of conduction angle RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 8 Ambient Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 102 7 5 4 3 2 VD = 12V Distribution Typical Example 101 7 5 4 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 4 of 7 BCR5CM-12LB Preliminary Breakover Voltage vs. Junction Temperature T2+, G+ Typical Example T2–, G– 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 100 7 0 10 Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant Minimum Characteristics Value III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Latching Current (mA) 103 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 III Quadrant I Quadrant 3 2 100 7 0 10 Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz Minimum Characteristics Value 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR5CM-12LB Preliminary Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 IRGT I 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω Recommended Circuit Values Around The Triac Load 6Ω C1 A 6V V Test Procedure I R1 A 6V 330Ω V C0 R0 330Ω Test Procedure II C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 Page 6 of 7 BCR5CM-12LB Preliminary Package Dimensions RENESAS Code PRSS0004AG-A Previous Code TO-220ABS MASS[Typ.] 2.1g Unit: mm 4.5 ± 0.2 9.9 ± 0.2 + 0.10 φ3.6 ± 0.2 (3.00) 9.2 ± 0.2 15.7 ± 0.2 1.30 – 0.05 1.62 Max 0.80 ± 0.10 13.08 ± 0.20 JEITA Package Code SC-46 2.8 ± 0.1 Package Name TO-220AB 2.6 Max 2.54 2.54 + 0.10 0.50 – 0.05 10.0 ± 0.2 Ordering Information Orderable Part Number BCR5CM-12LB#BB0 BCR5CM-12LB-A8#BB0 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS1026EJ0100 Rev.1.00 Feb 25, 2013 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2013 Renesas Electronics Corporation. All rights reserved. Colophon 2.2