RENESAS RQA0004PXDQS

Preliminary Datasheet
RQA0004PXDQS
R07DS0418EJ0500
Rev.5.00
May 09, 2012
Silicon N-Channel MOS FET
Features
 High Output Power, High Efficiency
Pout = +29.7 dBm, PAE = 68% (f = 520 MHz)
 Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
3
3
2
1
1. Gate
2. Source
3. Drain
4. Source
1
4
2, 4
Note:
Marking is “PX”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
0.3
3
150
–55 to +150
Unit
V
V
A
W
C
C
Note: Value at Tc = 25C
This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.
R07DS0418EJ0500 Rev.5.00
May 09, 2012
Page 1 of 18
RQA0004PXDQS
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
Output Power
PAE
Pout
Power Added Efficiency
PAE
Min.
—
—
0.3
0.3
—
—
—
—
—
—
—
—
—
28.7
0.74
60
Typ
—
—
0.6
0.43
10
5
0.4
25.1
0.33
65
26.6
0.46
71
29.7
0.93
68
Max.
2
±2
0.9
0.6
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
S
pF
pF
pF
dBm
W
%
dBm
W
%
dBm
W
%
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 0.3 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 3.7 V, IDQ = 50 mA
f = 174 MHz
Pin = +13 dBm (20 mW)
VDS = 3.7 V, IDQ = 50 mA
f = 520 MHz
Pin = +13 dBm (20 mW)
VDS = 6 V, IDQ = 50 mA
f = 520 MHz
Pin = +13 dBm (20 mW)
Main Characteristics
Typical Output Characteristics
5
0.4
4
Drain Current ID (A)
Channel Power Dissipation Pch (W)
Maximum Channel Power
Dissipation Curve
3
2
1
0
50
100
150
Case Temperature TC (°C)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
200
Pulse Test
1.75 V
2.0 V
0.3
1.5 V
0.2
1.25 V
0.1
0
VGS = 1.0 V
2
4
6
8
10
Drain to Source Voltage VDS (V)
Page 2 of 18
RQA0004PXDQS
Preliminary
Forward Transfer Admittance
vs. Drain Current
0.5
VDS = 6 V
Pulse Test
0.4
|yfs|
0.3
0.2
ID
0.1
0
0.5
1.0
1.5
2.0
Forward transfer Admittance |yfs| (S)
Drain Current ID (A)
Forward transfer Admittance |yfs| (S)
Typical Transfer Characteristics
0.1
0.1
0.01
1
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
Output Capacitance vs.
Drain to Source Voltage
10
Output Capacitance Coss (pF)
10
8
6
4
2
VDS = 0
f = 1 MHz
0
-5 -4 -3 -2 -1
0
1
2
3
4
1
VGS = 0
f = 1 MHz
0.1
0.1
5
1
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Maximum Stable Gain,|S21|2
vs. Frequency
10
1
VGS = 0
f = 1 MHz
0.1
0.1
1
Drain to Gate Voltage VDG (V)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
10
Maximum Stable Gain MSG (dB)
Forward Transfer Coefficient |S21|2 (dB)
Input Capacitance Ciss (pF)
VDS = 6 V
Pulse Test
Gate to Source Voltage VGS (V)
12
Reverse Transfer Capacitance Crss (pF)
1
30
25
MSG
20
15
10
5
0
|S21|2
VDS = 6 V
ID = 50 mA
500
1000
1500
2000
Frequency f (MHz)
Page 3 of 18
RQA0004PXDQS
Preliminary
Evaluation Circuit 1 (@VDD = 3.7 V Tuning, f = 174 MHz)
VGG
C3
VDD
C6
C4
C7
R2
C5
C2
L2
R1
50 Ω
C1
50 Ω
C9
C8
RF OUT
L1
L3
RF IN
C10
RQA0004
C1, C2, C5, C10: 100 pF Chip Capacitor
C3, C7:
1000 pF Chip Capacitor
C4, C6:
1 μF /+16V Chip Tantalum Capacitor
C8, C9:
22 pF Chip Capacitor
33 nH Chip Inductor
L2:
10 nH Chip Inductor
L3:
5.6 nH Chip Inductor
R1:
200 Ω Chip Resistor
R2:
6.8 kΩ Chip Resistor
Power Gain, Power Added Efficiency
vs. Input Power
Output Power, Drain Current
vs. Input Power
0.3
35
25
0.25
30
20
0.2
15
0.15
10
0.1
VDS = 3.7V
IDQ = 50 mA
f = 174 MHz
5
0
-5
0
5
10
Input Power Pin (dBm)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.05
0
15
Power Gain PG (dB)
ID
(A)
Pout
Drain Current ID
Output Power Pout (dBm)
30
70
60
PAE
25
50
20
40
PG
30
15
20
10
VDS = 3.7V
IDQ = 50 mA
f = 174 MHz
5
0
-5
0
5
10
10
0
15
Power Added Efficiency PAE (%)
L1:
Input Power Pin (dBm)
Page 4 of 18
RQA0004PXDQS
Preliminary
15
0.15
10
0.1
ID
VDS = 3.7 V
IDQ = 50 mA
Pin = 13 dBm
5
0
130
140
150
160
170
0.05
60
15
10
50
PG
VDS = 3.7 V
IDQ = 50 mA
Pin = 13 dBm
5
0
130
140
150
160
170
40
30
180
Output Power, Drain Current,
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
0.4
0.2
ID
10
0.1
IDQ = 50 mA
f = 174 MHz
Pin = 13 dBm
Power Gain PG (dB)
20
(A)
0.3
Drain Current ID
Pout
0
4
5
6
7
30
PAE
60
40
20
PG
10
20
IDQ = 50 mA
f = 174 MHz
Pin = 13 dBm
0
0
9
8
80
40
3
4
5
6
7
8
9
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current,
vs. Idling Current
Power Gain, Power Added Efficiency,
vs. Idling Current
40
30
0.3
Pout
20
0.2
ID
10
VDS = 3.7 V
f = 174 MHz
Pin = 13 dBm
0
50
100
150
200
250
Idling Current IDQ (mA)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.1
0
300
Power Gain PG (dB)
0.4
(A)
Output Power Pout (dBm)
PAE
Frequency f (MHz)
30
0
70
20
Frequency f (MHz)
40
Output Power Pout (dBm)
(A)
0
180
40
0
3
Power Gain PG (dB)
0.2
20
Drain Current ID
0.25
Drain Current ID
Output Power Pout (dBm)
Pout
25
80
25
80
PAE
30
60
VDS = 3.7 V
f = 174 MHz
Pin = 13 dBm
20
PG
10
0
50
100
150
40
20
0
200
250
Power Added Efficiency PAE (%)
0.3
30
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency,
vs. Frequency
0
300
Power Added Efficiency PAE (%)
Output Power, Drain Current
vs. Frequency
Idling Current IDQ (mA)
Page 5 of 18
RQA0004PXDQS
Preliminary
Evaluation Circuit 2 (@VDD = 3.7 & 6.0V Tuning, f = 520 MHz)
VGG
C5
VDD
C6
C11
C12
R1
C10
C4
L5
L3
50 Ω
C1 C2
L1
C3
C13 C14 50 Ω
L4
R2
L2
RF OUT
RF IN
C9
C7
C8
RQA0004
C1, C4, C10, C14: 100 pF Chip Capacitor
10 pF Chip Capacitor
C3, C7:
2 pF Chip Capacitor
C5, C12:
1000 pF Chip Capacitor
C6, C11:
1 μF /+16V Chip Tantalum Capacitor
C8:
2200 pF Chip Capacitor
C9:
3 pF Chip Capacitor
C13:
8 pF Chip Capacitor
L1, L2, L4:
5.6 nH Chip Inductor
L3:
27 nH Chip Inductor
L5:
4Turns D : 0.5 mm, φ2.4 mm Enamel Wire
R1:
6.8k Ω Chip Resistor
R2:
180 Ω Chip Resistor
Power Gain, Power Added Efficiency
vs. Input Power
Output Power, Drain Current
vs. Input Power
40
0.3
80
0.25
20
0.2
ID
15
0.15
10
0.1
VDS = 3.7V
IDQ = 50 mA
f = 520 MHz
5
0
-5
0
5
10
Input Power Pin (dBm)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.05
0
15
Power Gain PG (dB)
25
(A)
Pout
Drain Current ID
Output Power Pout (dBm)
30
PAE
30
60
PG
20
10
VDS = 3.7V
IDQ = 50 mA
f = 520 MHz
0
-5
0
5
10
40
20
0
15
Power Added Efficiency PAE (%)
C2:
Input Power Pin (dBm)
Page 6 of 18
RQA0004PXDQS
Preliminary
0.2
15
0.15
ID
0.1
10
VDS = 3.7 V
IDQ = 50 mA
Pin = 13 dBm
5
0
500
510
520
530
540
0.05
70
15
60
PG
10
50
VDS = 3.7 V
IDQ = 50 mA
Pin = 13 dBm
5
0
500
510
520
530
540
40
30
550
Frequency f (MHz)
Output Power, Drain Current,
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
0.4
0.2
ID
10
0.1
IDQ = 50 mA
f = 520 MHz
Pin = 13 dBm
(A)
Power Gain PG (dB)
20
0.3
Drain Current ID
Pout
30
0
4
5
6
7
PAE
30
60
20
40
10
0
9
8
80
40
IDQ = 50 mA
f = 520 MHz
Pin = 13 dBm
PG
20
0
3
4
5
6
7
8
9
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current,
vs. Idling Current
Power Gain, Power Added Efficiency,
vs. Idling Current
40
0.4
80
Pout
30
0.3
0.2
20
ID
10
VDS = 3.7 V
f = 520 MHz
Pin = 13 dBm
0
0
50
100
150
200
250
Idling Current IDQ (mA)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.1
0
300
Power Gain PG (dB)
PAE
(A)
Output Power Pout (dBm)
20
Frequency f (MHz)
40
Output Power Pout (dBm)
(A)
0
550
40
0
3
Power Gain PG (dB)
20
PAE
Drain Current ID
0.25
Pout
Drain Current ID
Output Power Pout (dBm)
25
80
25
30
60
20
40
PG
10
VDS = 3.7 V
f = 520 MHz
Pin = 13 dBm
0
0
50
100
150
200
250
Power Added Efficiency PAE (%)
0.3
30
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency,
vs. Frequency
20
0
300
Power Added Efficiency PAE (%)
Output Power, Drain Current
vs. Frequency
Idling Current IDQ (mA)
Page 7 of 18
RQA0004PXDQS
Preliminary
0.2
10
0.1
VDS = 6V
IDQ = 50 mA
f = 520 MHz
-5
0
5
0
15
10
60
PG
40
20
10
20
VDS = 6V
IDQ = 50 mA
f = 520 MHz
0
15
0
-5
0
5
10
Input Power Pin (dBm)
Output Power, Drain Current
vs. Frequency
Power Gain, Power Added Efficiency,
vs. Frequency
0.4
ID
0.1
10
VDS = 6 V
IDQ = 50 mA
Pin = 13 dBm
510
520
530
540
Power Gain PG (dB)
20
0.2
(A)
0.3
Drain Current ID
Pout
30
80
25
0
550
20
70
PAE
PG
15
60
50
10
VDS = 6 V
IDQ = 50 mA
Pin = 13 dBm
5
0
500
510
520
530
540
40
30
550
Frequency f (MHz)
Frequency f (MHz)
Output Power, Drain Current,
vs. Idling Current
Power Gain, Power Added Efficiency,
vs. Idling Current
40
40
0.4
80
Pout
30
0.3
ID
20
0.2
10
VDS = 6 V
f = 520 MHz
Pin = 13 dBm
0
0
50
100
150
200
250
Idling Current IDQ (mA)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.1
0
300
Power Gain PG (dB)
PAE
(A)
Output Power Pout (dBm)
PAE
30
Input Power Pin (dBm)
40
0
500
80
30
60
20
40
PG
10
VDS = 6V
f = 520 MHz
Pin = 13 dBm
0
0
50
100
150
200
250
20
0
300
Power Added Efficiency PAE (%)
20
Power Gain PG (dB)
ID
(A)
0.3
Pout
Drain Current ID
30
0
Output Power Pout (dBm)
40
0.4
Drain Current ID
Output Power Pout (dBm)
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency
vs. Input Power
Power Added Efficiency PAE (%)
Output Power, Drain Current
vs. Input Power
Idling Current IDQ (mA)
Page 8 of 18
RQA0004PXDQS
Preliminary
Evaluation Circuit 3 (@VDD = 3.7 V Tuning, f = 800 to 870 MHz)
VDD
1000 pF
1 μF/+16 V
100 pF
18 nH
50 Ω
100 pF
50 Ω
RF OUT
100 pF
2.7 nH
RF IN
7 pF
10 pF
20 pF
200 Ω
100 pF
6.8 kΩ
1000 pF
1 μF/+16V
VGG
Power Gain, Power Added Efficiency
vs. Input Power
0.8
Pout
0.6
870 MHz
0.4
20
800 MHz
835 MHz
ID
f = 870 MHz
10
0.2
Power Gain PG (dB)
30
f = 835 MHz
(A)
800 MHz
40
Drain Current ID
Output Power Pout (dBm)
40
80
PAE
30
0
0
5
10
15
20
Input Power Pin (dBm)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
25
60
800 MHz
40
20
f = 835 MHz
PG
800 MHz
10
870 MHz
VDS = 3.7 V
IDQ = 100 mA
0
f = 835 MHz
870 MHz
0
0
5
10
20
VDS = 3.7 V
IDQ = 100 mA
15
20
0
25
Power Added Efficiency PAE (%)
Output Power, Drain Current
vs. Input Power
Input Power Pin (dBm)
Page 9 of 18
RQA0004PXDQS
Preliminary
0.2
VDS = 3.7 V
IDQ = 100 mA
Pin = +17 dBm
0
800
0
900
850
20
VDS = 3.7 V
IDQ = 100 mA
Pin = +17 dBm
0
900
850
Output Power, Drain Current,
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
ID
0.2
10
f = 835 MHz
IDQ = 100 mA
Pin = +17 dBm
3
4
5
Power Gain PG (dB)
0.4
20
(A)
0.6
Drain Current ID
Pout
30
80
40
0
PAE
30
60
20
40
PG
20
10
0
6
f = 835 MHz
IDQ = 100 mA
Pin = +17 dBm
3
4
5
6
0
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current,
vs. Idling Current
Power Gain, Power Added Efficiency,
vs. Idling Current
40
Pout
30
0.6
0.4
20
ID
10
f = 835 MHz
VDS = 3.7 V
Pin = +17 dBm
50
100
150
200
250
Idling Current IDQ (mA)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.2
0
300
Power Gain PG (dB)
0.8
(A)
Output Power Pout (dBm)
PG
10
Frequency f (MHz)
40
Output Power Pout (dBm)
40
0
800
0.8
0
20
Frequency f (MHz)
40
0
60
80
PAE
30
60
20
40
PG
10
0
f = 835 MHz
VDS = 3.7 V
Pin = +17 dBm
50
100
150
200
250
20
0
300
Power Added Efficiency PAE (%)
ID
10
PAE
30
Power Added Efficiency PAE (%)
0.4
Power Gain PG (dB)
20
(A)
0.6
Drain Current ID
Pout
30
80
40
0.8
Drain Current ID
Output Power Pout (dBm)
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency,
vs. Frequency
Output Power, Drain Current
vs. Frequency
Idling Current IDQ (mA)
Page 10 of 18
RQA0004PXDQS
Preliminary
Evaluation Circuit 4 (@VDD = 3.7 V Tuning, f = 890 to 950 MHz)
VDD
1000 pF
1 μF/+16 V
100 pF
18 nH
50 Ω
100 pF
50 Ω
RF OUT
100 pF
1.8 nH
RF IN
7 pF
200 Ω
20 pF 24 pF
100 pF
6.8 kΩ
1000 pF
1 μF/+16V
VGG
Power Gain, Power Added Efficiency
vs. Input Power
0.8
Pout
0.6
890 MHz
0.4
20
950 MHz
ID
920 MHz
10
0.2
f = 890 MHz
Power Gain PG (dB)
950 MHz
(A)
f = 920 MHz
30
40
Drain Current ID
Output Power Pout (dBm)
40
80
950 MHz
30
890 MHz
40
20
f = 890 MHz
PG
10
5
10
15
20
Input Power Pin (dBm)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
25
0
0
20
950 MHz
920 MHz
0
0
60
PAE
VDS = 3.7 V
IDQ = 50 mA
0
f = 920 MHz
5
10
VDS = 3.7 V
IDQ = 50 mA
15
20
0
25
Power Added Efficiency PAE (%)
Output Power, Drain Current
vs. Input Power
Input Power Pin (dBm)
Page 11 of 18
RQA0004PXDQS
Preliminary
0.2
VDS = 3.7 V
IDQ = 50 mA
Pin = +17 dBm
0
850
0
950
900
20
0
950
900
Output Power, Drain Current,
vs. Drain to Source Voltage
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
ID
0.2
10
f = 920 MHz
IDQ = 50 mA
Pin = +17 dBm
3
4
5
Power Gain PG (dB)
0.4
20
(A)
0.6
Drain Current ID
Pout
30
80
40
0
30
60
PAE
40
20
PG
20
10
0
6
f = 920 MHz
IDQ = 50 mA
Pin = +17 dBm
3
4
5
6
0
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Output Power, Drain Current,
vs. Idling Current
Power Gain, Power Added Efficiency,
vs. Idling Current
40
Pout
30
0.6
0.4
20
ID
10
f = 920 MHz
VDS = 3.7 V
Pin = +17 dBm
50
100
150
200
250
Idling Current IDQ (mA)
R07DS0418EJ0500 Rev.5.00
May 09, 2012
0.2
0
300
Power Gain PG (dB)
0.8
(A)
Output Power Pout (dBm)
PG
10
Frequency f (MHz)
40
Output Power Pout (dBm)
40
20
0
850
0.8
0
60
PAE
Frequency f (MHz)
40
0
30
80
PAE
30
60
40
20
PG
10
0
f = 920 MHz
VDS = 3.7 V
Pin = +17 dBm
50
100
150
200
250
20
0
300
Power Added Efficiency PAE (%)
ID
10
VDS = 3.7 V
IDQ = 50 mA
Pin = +17 dBm
Power Added Efficiency PAE (%)
0.4
Power Gain PG (dB)
20
(A)
0.6
Pout
Drain Current ID
30
80
40
0.8
Drain Current ID
Output Power Pout (dBm)
40
Power Added Efficiency PAE (%)
Power Gain, Power Added Efficiency,
vs. Frequency
Output Power, Drain Current
vs. Frequency
Idling Current IDQ (mA)
Page 12 of 18
RQA0004PXDQS
Preliminary
S Parameter
(VDS = 3.6 V, IDQ = 50 mA, Zo = 50 )
S11
ANG (deg.)
-40.3
-58.4
-74.0
-87.5
-99.2
-108.7
-116.8
-122.6
-128.2
-132.4
-136.4
-140.2
-143.7
-147.1
-150.0
-152.7
MAG
0.021
0.029
0.034
0.037
0.038
0.039
0.040
0.040
0.040
0.040
0.039
0.038
0.038
0.037
0.036
0.035
S12
ANG (deg.)
69.4
46.8
36.1
27.8
20.8
14.1
8.9
4.0
-0.9
-4.6
-8.2
-11.5
-14.5
-17.6
-20.5
-23.1
MAG
0.784
0.744
0.700
0.657
0.640
0.615
0.601
0.595
0.595
0.596
0.602
0.608
0.616
0.626
0.634
0.643
S22
ANG (deg.)
-30.2
-51.2
-66.0
-77.8
-86.9
-94.4
-100.8
-106.1
-110.9
-115.2
-119.1
-122.7
-125.9
-129.2
-132.1
-134.9
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
MAG
0.946
0.931
0.898
0.865
0.856
0.827
0.812
0.804
0.792
0.791
0.790
0.787
0.787
0.788
0.792
0.797
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
0.801
0.807
0.812
0.817
0.827
0.834
0.840
0.846
0.845
0.839
0.843
0.847
0.850
0.852
0.858
0.861
0.863
0.863
0.873
0.878
0.886
0.895
0.894
0.895
0.890
0.890
0.896
0.898
-155.2
-157.3
-159.4
-161.7
-163.5
-165.6
-167.1
-168.4
-170.1
-171.7
-173.8
-175.4
-177.1
-179.0
179.6
178.3
176.8
174.8
173.0
171.4
170.2
168.9
168.2
167.3
165.8
164.0
162.6
161.1
4.54
4.29
4.06
3.83
3.62
3.42
3.24
3.06
2.89
2.73
2.59
2.47
2.34
2.24
2.13
2.05
1.96
1.88
1.81
1.75
1.68
1.61
1.55
1.48
1.42
1.37
1.32
1.27
54.7
51.4
48.8
46.1
43.7
41.0
38.6
36.3
33.7
31.2
28.6
26.3
24.0
21.8
19.7
17.6
15.4
13.1
10.9
9.0
7.3
5.5
4.2
2.7
0.9
-1.1
-3.1
-5.2
0.034
0.033
0.032
0.031
0.030
0.028
0.027
0.026
0.025
0.024
0.023
0.022
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.012
0.011
0.010
0.010
0.009
0.009
0.008
-25.1
-27.5
-29.7
-31.6
-33.7
-35.1
-36.6
-38.2
-39.6
-40.9
-41.9
-43.0
-43.9
-44.6
-44.7
-45.2
-45.3
-44.9
-44.9
-43.7
-42.9
-41.0
-38.6
-35.6
-33.6
-29.1
-24.1
-19.0
0.654
0.664
0.675
0.686
0.695
0.704
0.714
0.723
0.733
0.740
0.749
0.755
0.760
0.768
0.774
0.777
0.784
0.792
0.798
0.800
0.807
0.816
0.818
0.822
0.830
0.837
0.838
0.842
-137.6
-140.2
-142.8
-145.3
-147.5
-149.8
-152.0
-154.0
-156.0
-158.1
-160.2
-161.9
-164.0
-166.0
-167.8
-169.6
-171.7
-173.6
-175.3
-177.3
-179.3
179.1
177.6
175.6
173.8
172.3
170.7
168.9
2300
2350
2400
2450
2500
0.902
0.903
0.901
0.895
0.894
159.8
158.4
157.4
155.9
154.0
1.22
1.19
1.15
1.11
1.07
-7.1
-9.0
-11.0
-12.6
-14.4
0.008
0.008
0.008
0.008
0.008
-12.8
-8.3
-3.0
2.0
6.9
0.848
0.851
0.852
0.855
0.861
167.1
165.8
164.1
162.4
160.9
R07DS0418EJ0500 Rev.5.00
May 09, 2012
MAG
15.41
12.58
11.57
11.08
10.15
9.91
9.44
8.78
8.15
7.55
7.00
6.48
6.03
5.59
5.22
4.86
S21
ANG (deg.)
148.7
136.4
126.4
117.4
109.2
102.2
95.7
90.2
84.9
80.5
76.4
72.3
68.5
64.9
61.3
58.0
Page 13 of 18
RQA0004PXDQS
Preliminary
S Parameter
(VDS = 6 V, IDQ = 10 mA, Zo = 50 )
S11
ANG (deg.)
-34.4
-49.5
-63.2
-74.6
-85.3
-93.6
-101.5
-108.4
-114.4
-119.5
-124.3
-128.6
-132.8
-136.7
-140.2
-143.5
MAG
0.022
0.031
0.038
0.043
0.046
0.048
0.050
0.051
0.051
0.051
0.050
0.050
0.048
0.047
0.046
0.045
S12
ANG (deg.)
69.9
54.5
43.4
34.8
26.8
19.3
12.6
6.6
0.9
-3.9
-8.5
-12.8
-16.7
-20.3
-23.9
-27.1
MAG
0.869
0.858
0.823
0.801
0.788
0.773
0.759
0.754
0.749
0.747
0.750
0.752
0.755
0.761
0.767
0.772
S22
ANG (deg.)
-20.3
-35.1
-45.4
-54.6
-62.5
-70.0
-77.0
-83.0
-88.6
-93.9
-98.8
-103.3
-107.5
-111.6
-115.4
-119.2
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
MAG
0.973
0.931
0.913
0.896
0.892
0.878
0.870
0.861
0.853
0.853
0.851
0.845
0.844
0.846
0.849
0.853
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
0.857
0.860
0.867
0.870
0.875
0.883
0.888
0.890
0.890
0.886
0.886
0.886
0.889
0.891
0.895
0.898
0.896
0.897
0.903
0.911
0.917
0.926
0.928
0.925
0.918
0.916
0.918
0.922
-146.4
-149.0
-151.5
-154.0
-156.5
-158.7
-161.0
-162.5
-164.5
-166.6
-168.7
-170.8
-172.6
-174.5
-176.1
-177.6
-179.5
178.5
176.4
174.8
173.4
172.0
171.1
170.1
168.7
166.8
165.3
163.6
2.78
2.59
2.44
2.30
2.15
2.03
1.92
1.79
1.69
1.59
1.51
1.43
1.36
1.29
1.23
1.18
1.12
1.08
1.03
0.99
0.95
0.91
0.87
0.83
0.80
0.76
0.73
0.71
53.9
50.1
47.2
44.3
41.4
38.5
35.9
33.4
30.7
27.7
25.2
22.9
20.3
18.1
15.9
13.7
11.4
9.3
7.0
4.9
3.2
1.5
0.2
-1.5
-3.3
-5.3
-7.4
-9.4
0.043
0.042
0.041
0.039
0.037
0.036
0.034
0.033
0.031
0.030
0.028
0.027
0.025
0.024
0.022
0.021
0.020
0.019
0.017
0.016
0.015
0.014
0.012
0.011
0.010
0.009
0.008
0.007
-29.8
-32.9
-35.5
-38.2
-40.8
-43.1
-45.2
-47.4
-49.1
-51.1
-52.6
-54.4
-56.0
-57.4
-58.5
-59.9
-60.8
-61.8
-62.7
-62.8
-63.2
-63.2
-63.1
-61.7
-60.9
-59.1
-55.0
-52.5
0.778
0.785
0.792
0.798
0.805
0.811
0.818
0.823
0.830
0.834
0.840
0.843
0.846
0.851
0.855
0.855
0.859
0.866
0.869
0.869
0.874
0.881
0.879
0.883
0.888
0.894
0.894
0.895
-122.7
-126.1
-129.4
-132.5
-135.5
-138.4
-141.1
-143.7
-146.2
-148.7
-151.2
-153.3
-155.9
-158.2
-160.3
-162.4
-164.7
-166.9
-168.8
-171.0
-173.3
-175.1
-176.8
-179.1
179.0
177.4
175.6
173.6
2300
2350
2400
2450
2500
0.921
0.923
0.920
0.913
0.911
162.2
160.6
159.7
158.0
156.0
0.68
0.65
0.63
0.61
0.59
-11.4
-13.3
-15.2
-16.8
-18.6
0.007
0.006
0.006
0.005
0.005
-46.3
-40.6
-33.7
-24.3
-14.3
0.900
0.902
0.902
0.902
0.907
171.8
170.3
168.5
166.6
164.9
R07DS0418EJ0500 Rev.5.00
May 09, 2012
MAG
12.25
11.13
10.12
9.10
8.08
7.27
6.56
5.95
5.40
4.91
4.50
4.15
3.79
3.48
3.22
2.99
S21
ANG (deg.)
150.2
138.3
128.8
120.5
113.3
107.0
100.5
94.8
89.2
84.0
79.0
74.4
70.0
65.6
61.6
57.7
Page 14 of 18
RQA0004PXDQS
Preliminary
S Parameter
(VDS = 6 V, IDQ = 25 mA, Zo = 50 )
S11
ANG (deg.)
-37.1
-53.7
-68.0
-80.1
-90.8
-99.6
-107.8
-114.7
-120.7
-125.9
-130.4
-134.3
-138.3
-142.1
-145.5
-148.4
MAG
0.021
0.030
0.034
0.038
0.040
0.042
0.043
0.044
0.044
0.043
0.043
0.042
0.041
0.040
0.040
0.039
S12
ANG (deg.)
68.6
51.0
40.6
31.7
24.1
17.3
11.5
6.1
1.3
-3.1
-7.0
-10.7
-14.2
-17.5
-20.5
-23.3
MAG
0.793
0.772
0.732
0.701
0.685
0.663
0.649
0.642
0.639
0.637
0.641
0.645
0.651
0.659
0.667
0.674
S22
ANG (deg.)
-24.9
-42.1
-54.4
-64.6
-73.2
-80.8
-87.5
-93.1
-98.3
-103.0
-107.4
-111.3
-115.1
-118.7
-122.0
-125.3
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
MAG
0.959
0.921
0.900
0.880
0.875
0.857
0.844
0.836
0.827
0.824
0.821
0.818
0.813
0.816
0.817
0.820
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
0.826
0.830
0.834
0.841
0.847
0.852
0.856
0.865
0.862
0.860
0.860
0.862
0.863
0.866
0.871
0.875
0.873
0.876
0.883
0.889
0.897
0.905
0.909
0.905
0.899
0.898
0.902
0.906
-150.9
-153.2
-155.8
-158.3
-160.3
-162.3
-164.4
-165.9
-167.5
-169.6
-171.5
-173.2
-175.2
-176.9
-178.4
-179.8
178.5
176.5
174.5
173.0
171.7
170.4
169.7
168.7
167.3
165.3
163.9
162.2
3.93
3.70
3.50
3.31
3.12
2.96
2.80
2.63
2.49
2.35
2.24
2.12
2.02
1.93
1.84
1.76
1.68
1.61
1.56
1.50
1.44
1.38
1.33
1.27
1.21
1.17
1.12
1.09
55.7
52.4
49.4
46.4
44.0
41.3
38.8
36.5
33.8
30.9
28.5
26.1
23.6
21.6
19.3
17.2
14.8
12.7
10.4
8.5
6.7
5.1
3.6
2.1
0.1
-1.8
-3.8
-6.0
0.037
0.036
0.035
0.034
0.033
0.031
0.030
0.029
0.028
0.026
0.025
0.024
0.023
0.022
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.008
-25.8
-28.5
-30.8
-33.1
-35.4
-37.3
-39.1
-41.0
-42.5
-43.9
-45.5
-46.8
-48.1
-49.2
-49.9
-50.8
-51.4
-51.4
-51.6
-51.7
-50.9
-50.1
-49.2
-47.0
-45.2
-42.2
-37.3
-33.6
0.684
0.693
0.703
0.713
0.722
0.730
0.739
0.747
0.756
0.762
0.771
0.777
0.781
0.788
0.793
0.796
0.802
0.810
0.815
0.816
0.823
0.832
0.833
0.837
0.843
0.850
0.851
0.854
-128.3
-131.4
-134.3
-137.1
-139.6
-142.2
-144.7
-147.0
-149.3
-151.6
-153.8
-155.8
-158.1
-160.3
-162.4
-164.3
-166.5
-168.5
-170.3
-172.5
-174.6
-176.4
-178.0
179.9
177.9
176.5
174.7
172.8
2300
2350
2400
2450
2500
0.908
0.908
0.907
0.898
0.898
160.9
159.5
158.5
157.1
154.9
1.05
1.02
0.98
0.95
0.92
-7.9
-9.8
-11.5
-13.3
-15.0
0.007
0.007
0.007
0.007
0.007
-28.1
-22.0
-16.1
-9.5
-2.6
0.860
0.863
0.863
0.866
0.872
171.0
169.5
167.8
166.0
164.4
R07DS0418EJ0500 Rev.5.00
May 09, 2012
MAG
15.64
13.98
12.68
11.49
10.21
9.32
8.53
7.76
7.12
6.56
6.06
5.63
5.20
4.83
4.50
4.19
S21
ANG (deg.)
150.5
137.6
128.1
119.6
112.2
105.9
99.4
93.6
88.2
83.3
78.7
74.4
70.4
66.5
62.6
59.2
Page 15 of 18
RQA0004PXDQS
Preliminary
S Parameter
(VDS = 6 V, IDQ = 50 mA, Zo = 50 )
S11
ANG (deg.)
-41.0
-58.4
-73.5
-86.2
-97.3
-106.3
-114.5
-121.2
-126.8
-131.6
-135.9
-139.6
-143.4
-146.7
-149.7
-152.4
MAG
0.019
0.027
0.031
0.035
0.036
0.037
0.038
0.038
0.038
0.038
0.037
0.037
0.036
0.035
0.035
0.034
S12
ANG (deg.)
63.9
48.6
38.3
30.0
22.9
16.3
11.5
6.3
2.0
-2.0
-5.4
-8.7
-11.8
-14.7
-17.6
-19.9
MAG
0.702
0.688
0.646
0.613
0.602
0.582
0.571
0.567
0.567
0.569
0.573
0.578
0.586
0.596
0.604
0.612
S22
ANG (deg.)
-28.7
-48.7
-62.4
-73.4
-82.6
-90.1
-96.7
-102.2
-107.1
-111.4
-115.4
-119.0
-122.3
-125.5
-128.4
-131.3
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
MAG
0.960
0.916
0.892
0.868
0.860
0.840
0.825
0.816
0.810
0.806
0.802
0.797
0.795
0.797
0.798
0.806
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
0.807
0.811
0.817
0.822
0.831
0.834
0.842
0.846
0.848
0.842
0.843
0.844
0.849
0.849
0.857
0.860
0.860
0.861
0.870
0.878
0.884
0.889
0.895
0.890
0.886
0.887
0.891
0.895
-155.0
-157.3
-159.5
-161.6
-163.6
-165.7
-167.2
-168.7
-170.2
-171.9
-173.9
-175.6
-177.3
-178.8
179.6
178.2
176.8
174.8
172.9
171.4
170.1
169.0
168.3
167.5
165.9
164.1
162.6
161.2
4.89
4.59
4.35
4.11
3.90
3.69
3.50
3.30
3.13
2.97
2.82
2.69
2.56
2.45
2.33
2.24
2.15
2.06
1.99
1.92
1.84
1.77
1.71
1.63
1.57
1.51
1.46
1.40
57.4
54.3
51.4
48.7
46.3
43.7
41.3
39.0
36.4
33.7
31.4
29.0
26.7
24.5
22.4
20.1
17.9
15.9
13.6
11.5
9.8
8.3
6.7
5.3
3.3
1.3
-0.7
-2.7
0.033
0.032
0.031
0.030
0.029
0.028
0.027
0.026
0.025
0.024
0.023
0.022
0.021
0.020
0.018
0.017
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.011
0.010
0.009
0.009
0.009
-21.9
-24.5
-26.4
-28.4
-30.5
-32.1
-33.4
-35.1
-36.5
-37.5
-38.5
-40.1
-40.5
-41.3
-41.5
-42.1
-42.2
-42.1
-41.9
-40.8
-39.7
-38.1
-36.3
-33.9
-31.3
-27.8
-23.0
-19.0
0.623
0.632
0.645
0.655
0.666
0.674
0.685
0.695
0.703
0.711
0.721
0.727
0.733
0.740
0.748
0.752
0.758
0.767
0.774
0.776
0.784
0.793
0.796
0.799
0.808
0.816
0.818
0.822
-134.0
-136.6
-139.2
-141.7
-144.0
-146.3
-148.5
-150.5
-152.6
-154.7
-156.7
-158.5
-160.7
-162.7
-164.6
-166.3
-168.4
-170.3
-172.1
-174.0
-176.1
-177.7
-179.3
178.7
176.8
175.3
173.6
171.8
2300
2350
2400
2450
2500
0.897
0.898
0.896
0.890
0.890
159.7
158.5
157.4
155.8
154.0
1.36
1.31
1.27
1.23
1.19
-4.8
-6.6
-8.5
-10.4
-12.1
0.008
0.008
0.008
0.008
0.008
-14.5
-9.8
-5.1
-0.3
5.2
0.828
0.833
0.835
0.836
0.843
170.1
168.6
167.0
165.2
163.6
R07DS0418EJ0500 Rev.5.00
May 09, 2012
MAG
19.06
16.77
15.28
14.02
12.48
11.51
10.57
9.62
8.80
8.12
7.49
6.94
6.44
5.97
5.57
5.20
S21
ANG (deg.)
150.1
137.1
127.1
118.4
110.8
104.4
98.0
92.7
87.6
83.0
78.8
74.9
71.2
67.5
64.0
60.7
Page 16 of 18
RQA0004PXDQS
Preliminary
S Parameter
(VDS = 6 V, IDQ = 100 mA, Zo = 50 )
S11
ANG (deg.)
-45.9
-64.3
-80.4
-93.9
-104.9
-113.3
-120.8
-126.9
-132.3
-136.7
-140.6
-144.0
-147.5
-150.6
-153.5
-156.1
MAG
0.019
0.024
0.028
0.031
0.032
0.033
0.033
0.033
0.033
0.033
0.033
0.032
0.032
0.031
0.031
0.030
S12
ANG (deg.)
65.4
48.3
37.6
29.8
23.1
16.8
11.9
7.4
3.3
-0.3
-3.5
-6.6
-9.3
-11.7
-14.3
-16.5
MAG
0.615
0.597
0.560
0.534
0.517
0.517
0.511
0.512
0.513
0.518
0.524
0.531
0.540
0.550
0.558
0.567
S22
ANG (deg.)
-34.3
-55.7
-70.8
-82.5
-91.7
-99.6
-106.1
-111.3
-115.9
-120.0
-123.5
-126.7
-129.7
-132.5
-135.0
-137.5
f (MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
MAG
0.972
0.920
0.888
0.860
0.847
0.827
0.816
0.809
0.799
0.800
0.801
0.792
0.788
0.790
0.793
0.798
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
2250
0.801
0.805
0.809
0.814
0.823
0.829
0.835
0.837
0.836
0.834
0.835
0.837
0.839
0.844
0.849
0.850
0.850
0.854
0.861
0.868
0.875
0.881
0.886
0.882
0.878
0.877
0.883
0.891
-158.5
-160.5
-162.7
-164.5
-166.3
-168.2
-169.7
-171.0
-172.5
-174.2
-176.1
-177.8
-179.4
179.0
177.7
176.5
174.9
173.0
171.4
170.0
168.7
167.5
166.8
166.0
164.6
163.1
161.5
159.9
5.62
5.31
5.03
4.77
4.51
4.29
4.08
3.85
3.65
3.47
3.31
3.15
3.00
2.88
2.75
2.64
2.53
2.44
2.36
2.27
2.19
2.11
2.03
1.95
1.87
1.80
1.74
1.68
59.1
56.1
53.5
51.1
48.5
45.9
43.7
41.5
39.0
36.4
33.9
31.6
29.4
27.2
25.1
23.1
20.8
18.5
16.4
14.4
12.6
11.0
9.6
8.0
6.2
4.2
2.2
0.1
0.029
0.028
0.027
0.027
0.026
0.025
0.024
0.023
0.022
0.021
0.021
0.020
0.019
0.018
0.017
0.016
0.015
0.015
0.014
0.013
0.012
0.012
0.011
0.011
0.010
0.010
0.010
0.009
-18.3
-20.2
-21.9
-23.6
-25.4
-26.6
-27.9
-28.9
-30.3
-30.8
-31.5
-32.5
-33.0
-33.2
-32.9
-32.8
-32.6
-31.9
-31.0
-29.7
-28.0
-26.0
-24.3
-21.0
-18.4
-15.2
-10.2
-6.5
0.578
0.588
0.601
0.612
0.622
0.632
0.643
0.653
0.662
0.670
0.681
0.688
0.694
0.702
0.711
0.715
0.722
0.731
0.738
0.741
0.749
0.759
0.763
0.768
0.776
0.785
0.787
0.792
-139.8
-142.2
-144.5
-146.5
-148.5
-150.6
-152.6
-154.3
-156.1
-158.1
-159.9
-161.4
-163.4
-165.3
-167.0
-168.7
-170.6
-172.5
-174.1
-175.9
-177.9
-179.4
179.0
177.1
175.3
174.0
172.3
170.6
2300
2350
2400
2450
2500
0.892
0.896
0.892
0.885
0.884
158.6
157.7
156.4
155.1
153.0
1.63
1.58
1.53
1.47
1.43
-1.9
-3.8
-5.7
-7.5
-9.4
0.010
0.009
0.009
0.010
0.010
-2.2
1.0
4.1
7.7
11.4
0.799
0.804
0.806
0.810
0.816
168.9
167.5
166.0
164.3
162.7
R07DS0418EJ0500 Rev.5.00
May 09, 2012
MAG
22.91
19.70
17.99
16.78
14.91
13.65
12.39
11.24
10.23
9.38
8.68
8.00
7.41
6.89
6.42
5.99
S21
ANG (deg.)
149.6
136.4
125.8
116.9
109.3
103.1
97.3
92.4
87.7
83.4
79.5
75.9
72.3
68.9
65.6
62.3
Page 17 of 18
RQA0004PXDQS
Preliminary
Package Dimensions
1.5 1.5
3.0
MASS[Typ.]
0.050g
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
0.53 Max
0.48 Max
0.8 Min
φ1
0.4
4.5 ± 0.1
1.8 Max
Previous Code
UPAK / UPAKV
Unit: mm
(1.5)
0.44 Max
(0.2)
RENESAS Code
PLZZ0004CA-A
(2.5)
JEITA Package Code
SC-62
(0.4)
Package Name
UPAK
Ordering Information
Orderable Part Number
RQA0004PXTL-E
R07DS0418EJ0500 Rev.5.00
May 09, 2012
Quantity
1000 pcs.
Shipping Container
178 mm Reel, 12 mm Emboss Taping
Page 18 of 18
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Colophon 1.1