Preliminary Datasheet RQK0201QGDQA R07DS0301EJ0400 (Previous: REJ03G1321-0300) Rev.4.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 25 m typ (VGS = 4.5 V, ID = 2.4 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2. Gate 3. Drain 2 1 2 S 1 Note: Marking is “QG”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS Ratings 20 12 Unit V V ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg 4.5 15 4.5 0.8 150 –55 to +150 A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0301EJ0400 Rev.4.00 Mar 28, 2011 Page 1 of 6 RQK0201QGDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 20 12 — — 0.4 Typ — — — — — Max — — 10 1 1.4 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 30 39 m ID = 2.4A, VGS = 4.5 VNote3 RDS(on) — 38 53 m ID = 2.4A, VGS = 2.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 9 — — — — — — — — 12 479 106 48 14 53 35 6 4.6 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 2.4A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Qgs Qgd VDF — — — 0.9 1.3 0.85 — — 1.1 nC nC V VDS = 10 V VGS = 0 f = 1 MHz ID = 2.4 A VGS = 4.5 V RL = 5.50 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 4.5 A IF = 4.5 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0301EJ0400 Rev.4.00 Mar 28, 2011 Page 2 of 6 RQK0201QGDQA Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 1 Channel Dissipation Pch (W) Operation in this area is limited by RDS(on) Drain Current ID (A) 0.8 0.6 0.4 0.2 100 μs 10 1 PW 1 DC 10 = m s m s 10 0 m s O pe ra tio n 0.1 Ta = 25°C 1 Shot Pulse 0 0 50 100 0.01 0.01 150 Ambient Temperature Ta (°C) 0.1 1 10 100 Drain to Source Voltage VDS (V) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Typical Transfer Characteristics (1) Typical Output Characteristics 15 2.2 V VDS = 10 V Pulse Test 3V 10 V 12 2.0 V Pulse Test Tc = 25°C 9 1.8 V 6 1.6 V 3 1.4 V Drain Current ID (A) Drain Current ID (A) 15 12 9 6 3 Tc = 75°C 0 VGS = 0 V 0 2 4 6 8 0 10 0 Drain to Source Voltage VDS (V) 0.5 1 25°C –25°C 1.5 2 2.5 3 3.5 4 Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Drain Current ID (A) VDS = 10 V Pulse Test 0.1 0.01 Tc = 75°C 25°C 0.001 –25°C 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) R07DS0301EJ0400 Rev.4.00 Mar 28, 2011 3 Gate to Source Cutoff Voltage VGS(off) (V) 1 Case Temperature 1.5 VDS = 10 V Pulse Test ID = 10 mA 1 1 mA 0.5 0.1 mA 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 Preliminary 400 Pulse Test Tc = 25°C 300 200 4.5 A 100 2.4 A 1A 0 0 0.5 A 2 4 6 8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 1000 Pulse Test Tc = 25°C 100 VGS = 2.5 V 4.5 V 10 V 10 0.1 1 10 100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 70 50 60 Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) ID = 4.5 A 2.4 A 50 40 1A 0.5 A 30 0 25 50 75 100 125 150 ID = 4.5 A 40 2.4 A 30 1A 0.5 A 20 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 Pulse Test VDS = 10 V –25°C 10 25°C 1 Tc = 75°C 0.1 0.01 0.01 Pulse Test VGS = 4.5 V Case Temperature Tc (°C) 0.1 1 10 Drain Current ID (A) R07DS0301EJ0400 Rev.4.00 Mar 28, 2011 100 IDSS (nA) 20 –25 Pulse Test VGS = 2.5 V Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) RQK0201QGDQA 10000 1000 Pulse Test VGS = 0 V VDS = 20 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 6 RQK0201QGDQA Preliminary Switching Characteristics 16 30 12 5V 10 V VDD = 20 V 20 VDD = 20 V 8 VGS 10 V 5V 10 4 ID = 4.5 A Tc = 25°C 0 VDS 0 2 4 6 0 10 8 1000 Switching Time t (ns) 40 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(on) 10 tf 1 10 100 Gate Charge Qg (nc) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 900 Ciss 850 800 Coss 100 Crss Ciss (pF) Ciss, Coss, Crss (pF) tr td(off) 1 0.1 1000 10 15 VDS = 0 V f = 1 MHz –10 –8 –6 –4 –2 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 15 Pulse Test Tc = 25°C 10 V 12 5V 9 6 3 0 0 700 600 5 –5, –10 V VGS = 0 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0301EJ0400 Rev.4.00 Mar 28, 2011 Body-Drain Diode Forward Voltage VSDF (V) 10 0 750 650 VGS = 0 V f = 1 MHz Reverse Drain Current IDR (A) 100 VDD = 10 V VGS = 4.5 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C 0.6 VGS = 0 0.5 0.4 ID = 10 mA 0.3 1 mA 0.2 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 6 RQK0201QGDQA Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number Quantity RQK0201QGDQATL-H 3000 pcs. 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