Preliminary Datasheet RQK2001HQDQA R07DS0311EJ0200 (Previous: REJ03G1731-0100) Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 200 V and VGSS : ±30 V • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 G 1 1. Source 2. Gate 3. Drain 2 S 1 Note: Marking is "HQ". Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Tch Tstg Ratings 200 ±30 0.4 1.6 0.4 0.8 156 150 –55 to +150 Unit V V A A A W °C / W °C °C Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 Page 1 of 7 RQK2001HQDQA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Symbol V(BR)DSS IGSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min 200 — — — 3 — 0.2 — — — — — — — — — — Typ — — — — — 5.0 0.3 30 5 2 13 12 42 38 1.8 0.4 0.9 Max — +0.1 –0.1 1 4.5 6.7 — — — — — — — — — — — Unit V μA μA μA V Ω S pF pF pF ns ns ns ns nC nC nC Body - drain diode forward voltage VDF — 0.8 1.2 V Test conditions ID = 10 mA, VGS = 0 VGS = +30 V, VDS = 0 VGS = –30 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.15 A, VGS =10 V Note3 ID = 0.15 A, VDS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.15 A VGS = 10 V RL = 667 Ω Rg = 50 Ω VDD = 100 V VGS = 10 V ID = 0.4 A IF = 0.4 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 Page 2 of 7 RQK2001HQDQA Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area Channel Dissipation Pch (W) 1.0 10 Drain Current ID (A) 0.8 0.6 0.4 0.2 0 Ta = 25°C 1 Shot Pulse 10 0 1 10 m s 1 μs m s DC 0.1 Op er ati on 10 0 m s 0.01 Operation in this area is limited by RDS(on) 0.001 0 25 50 75 100 125 150 1 Ambient Temperature Ta (°C) 1000 100 10 Drain to Source Voltage VDS (V) *When using the glass epoxy board (FR-4 40 x 40 x 1 mm) Typical Transfer Characteristics (1) Typical Output Characteristics 1.6 1.0 Pulse Test Tc = 25°C VDS = 10 V Pulse Test 9, 10, 15 V 20, 25 V Drain Current ID (A) Drain Current ID (A) 1.4 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 VGS = 0V 0.2 0 0 8 4 12 0.8 0.6 0.4 0.2 Tc = 75°C 5V 16 0 20 Drain to Source Voltage VDS (V) 0 2 4 25°C –25°C 6 8 10 Gate to Source Voltage VGS (V) 0.1 Drain Current ID (A) VDS = 10 V Pulse Test 0.01 0.001 Tc = 75°C 25°C 0.0001 –25°C 0.00001 0 1 2 3 4 5 Gate to Source Voltage VGS (V) R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 6 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 6 ID = 10 mA 4 1 mA 0.1 mA 2 VDS = 10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 7 RQK2001HQDQA Preliminary Pulse Test Tc = 25°C 3 2 0.15 A 0.2 A 1 0.1 A 0 0 4 8 12 16 20 100 Pulse Test Tc = 25°C 10 VGS = 10 V 1 0.01 0.1 1 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Forward Transfer Admittance vs. Drain Current 20 Pulse Test VGS = 10 V ID = 0.6 A 0.5 A 15 0.4 A 10 0.2 A 5 0.1, 0.15 A 0 –25 0 25 50 75 100 125 150 Forward Transfer Admittance |yfs| (S) Gate to Source Voltage VGS (V) 1 Pulse Test VDS = 10 V –25°C 25°C Tc = 75°C 0.1 0.01 0.1 1 Case Temperature Tc (°C) Drain Current ID (A) Zero Gate Voltage Drain current vs. Case Temperature Dynamic Input Characteristics 1000 Pulse Test VGS = 0 V VDS = 203 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 160 ID = 0.4 A Tc = 25°C VDD = 25 V 50 V 100 V 150 V 120 12 8 80 VDD = 150 V 100 V 50 V 25 V 40 0 0 16 0.4 0.8 1.2 1.6 4 Gate to Source Voltage VGS (V) Drain to Source on State Resistance RDS(on) (Ω) 4 Static Drain to Source on State Resistance vs. Drain Current Drain to Source Voltage VDS (V) Zero Gate Voltage Drain current IDSS (nA) Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 2.0 Gate Charge Qg (nc) Page 4 of 7 RQK2001HQDQA Preliminary Typical Capacitance vs. Drain to Source Voltage Switching Characteristics 100 1000 Switching Time t (ns) Ciss, Coss, Crss (pF) VGS = 10 V, VDD = 100 V Rg = 50 Ω, duty ≤ 1 % Tc = 25°C tf 100 td(off) td(on) 10 tr VGS = 0 V f = 1 MHz Ciss 10 Coss Crss 1 1 0.01 0 1 0.1 30 40 50 Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 1.6 70 65 60 55 VDS = 0 f = 1 MHz 50 –10 –8 –6 –4 –2 0 Reverse Drain Current IDR (A) 75 Ciss (pF) 20 Drain Current ID (A) 80 4 6 8 10 Pulse Test Tc = 25°C 1.4 1.2 1.0 0.8 10, 15, 20, 25 V VGS = –25, –20, –15 –10, –5, 0 V 0.6 0.4 5V 0.2 0 2 Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage VSDF (V) 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature 1.0 VGS = 0 0.8 ID = 10 mA 0.6 0.4 1 mA 0.2 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 Page 5 of 7 RQK2001HQDQA Preliminary Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Switching Time Waveform D.U.T. RL Vin Vout Vin 10 V VDD = 100 V 10% 10% 90% td(on) R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 10% tr 90% td(off) tf Page 6 of 7 RQK2001HQDQA Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number RQK2001HQDQATL-H R07DS0311EJ0200 Rev.2.00 Mar 28, 2011 Quantity 3000 pcs. Shipping Container φ178 mm reel, 8 mm Emboss taping Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. 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