VISHAY ICTE5

ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available
in
uni-directional
and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 μs waveform, repetitive
rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade
Product requirements at:
www.vishay.com/applications
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
PPPM
1500 W
PD
6.5 W
IFSM
200 A
TJ max.
175 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs
waveform (1) (fig.
3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
SYMBOL
LIMIT
UNIT
PPPM
1500
W
IPPM
See next table
A
PD
6.5
W
IFSM
200
A
VF
3.5
V
TJ, TSTG
- 55 to + 175
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
STAND-OFF
VOLTAGE
VWM (V)
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0 mA
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
ICTE5 (2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE15
15.0
17.6
2.0
20.1
20.6
60
1N6378
ICTE18
18.0
21.2
2.0
24.2
25.2
50
JEDEC
TYPE NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
UNI-DIRECTIONAL TYPES
1N6373 (2)
BI-DIRECTIONAL TYPES
1N6382
ICTE8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE15C
15.0
17.6
2.0
20.8
21.4
60
1N6386
ICTE18C
18.0
21.2
2.0
24.8
25.5
50
Notes
(1)
“C” suffix indicates bi-directional
(2)
ICTE5 and 1N6373 are not available as bi-directional
(3)
Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE5-E3/54
0.968
54
1400
13" diameter paper tape and reel
ICTE5HE3/54 (1)
0.968
54
1400
13" diameter paper tape and reel
Note
(1)
Automotive grade
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88356
Revision: 07-May-10
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
CJ - Junction Capacitance (pF)
PPPM - Peak Pulse Power (kW)
100
10
1
Measured at
Zero Bias
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at Stand-Off
Voltage VWM
1000
0.1
1.0 μs
10 μs
100 μs
1.0 ms
100
10 ms
10
1.0
100
VBR - Breakdown Voltage (V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Uni-Directional
100 000
100
75
50
25
Measured at
Zero Bias
Bi-Directional Type
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10 000
1000
Measured at Stand-Off
Voltage VWM
100
0
0
25
50
75
100
125
150
175
1.0
200
10
100
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Junction Capacitance
150
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 μs
Peak Value
IPPM
100
IFSM - Peak Forward Surge Current (A)
IPPM - Peak Pulse Current, % IRSM
200
td - Pulse Width (s)
CJ - Junction Capacitance (pF)
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
0.1 μs
Half Value - IPP
IPPM
2
50
10/1000 μs Waveform
as defined by R.E.A.
td
0
200
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
0
1.0
2.0
3.0
4.0
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
8.0
Uni-Directional Only
TA = 25 °C
PD - Power Dissipation (W)
7.0
ICTE18
ICTE15
ICTE12
ICTE10
ICTE8
10
ICTE5
IPP - Peak Pulse Current (A)
50
6.0
5.0
4.0
3.0
L = 0.375" (9.5 mm)
Lead Lengths
2.0
1.0
1
0
6
8
10
12
14
16
18
20
22
24
26
28
0
25
50
75
100
125
150
175
VC - Clamping Voltage (V)
TL - Lead Temperature (°C)
Figure 7. Typical Characteristics Clamping Voltage
Figure 8. Power Derating Curve
200
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88356
Revision: 07-May-10
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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