P4KA6.8 thru P4KA43A Vishay General Semiconductor PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only DO-204AL (DO-41) • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time PRIMARY CHARACTERISTICS • Low incremental surge resistance VBR 6.8 V to 43 V PPPM 400 W • Solder dip 275 °C max. 10 s, per JESD 22-B106 PD 1.5 W • AEC-Q101 qualified IFSM 40 A TJ max. 185 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication. MECHANICAL DATA Case: DO-204AL, molded epoxy over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPPM 400 W IPPM See next table A Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) PD 1.5 W Peak forward surge current 8.3 ms single half sine-wave (2) IFSM 40 A Peak pulse power dissipation with a 10/1000 µs waveform (1) Peak pulse current with a 10/1000 µs waveform (1) (fig. 3) (fig. 1) Maximum instantaneous forward voltage at 25 A Operating junction and storage temperature range VF 3.5 V TJ, TSTG - 65 to + 185 °C Notes (1) (2) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 All terms and symbols are consistent with ANSI/IEEE C62.35 Document Number: 88364 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 P4KA6.8 thru P4KA43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. MAX. STANDTEST OFF CURRENT VOLTAGE IT VWM (mA) (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) MAXIMUM. MAXIMUM MAXIMUM PEAK PULSE CLAMPING TEMPERATURE SURGE VOLTAGE COEFFICIENT CURRENT AT IPPM OF VBR IPPM (2) VC (%/°C) (A) (V) P4KA6.8 6.12 7.48 10 5.50 300 1000 37.0 10.8 0.057 P4KA6.8A 6.45 7.14 10 5.80 300 1000 38.1 10.5 0.057 0.060 P4KA7.5 6.75 8.25 10 6.05 150 500 34.2 11.7 P4KA7.5A 7.13 7.88 10 6.40 150 500 35.4 11.3 0.061 P4KA8.2 7.38 9.02 10 6.63 50 200 32.0 12.5 0.065 P4KA8.2A 7.79 8.61 10 7.02 50 200 33.1 12.1 0.065 P4KA9.1 8.19 10.0 1.0 7.37 10 50 29.0 13.8 0.068 P4KA9.1A 8.65 9.55 1.0 7.78 10 50 29.9 13.4 0.068 P4KA10 9.00 11.0 1.0 8.10 5.0 20 26.7 15.0 0.073 P4KA10A 9.50 10.5 1.0 8.55 5.0 20 27.6 14.5 0.073 P4KA11 9.90 12.1 1.0 8.92 1.0 5.0 24.7 16.2 0.075 P4KA11A 10.5 11.6 1.0 9.40 1.0 5.0 25.6 15.6 0.075 P4KA12 10.8 13.2 1.0 9.72 1.0 5.0 23.1 17.3 0.076 P4KA12A 11.4 12.6 1.0 10.2 1.0 5.0 24.0 16.7 0.078 P4KA13 11.7 14.3 1.0 10.5 1.0 5.0 21.1 19.0 0.081 P4KA13A 12.4 13.7 1.0 11.1 1.0 5.0 22.0 18.2 0.081 P4KA15 13.5 16.3 1.0 12.1 1.0 5.0 18.2 22.0 0.084 P4KA15A 14.3 15.8 1.0 12.8 1.0 5.0 18.9 21.2 0.084 P4KA16 14.4 17.6 1.0 12.9 1.0 5.0 17.0 23.5 0.086 P4KA16A 15.2 16.8 1.0 13.6 1.0 5.0 17.8 22.5 0.086 P4KA18 16.2 19.8 1.0 14.5 1.0 5.0 15.1 26.5 0.088 P4KA18A 17.1 18.9 1.0 15.3 1.0 5.0 15.9 25.5 0.088 P4KA20 18.0 22.0 1.0 16.2 1.0 5.0 13.7 29.1 0.090 P4KA20A 19.0 21.0 1.0 17.0 1.0 5.0 14.4 27.7 0.090 P4KA22 19.8 24.2 1.0 17.8 1.0 5.0 12.5 31.9 0.092 P4KA22A 20.9 23.1 1.0 18.8 1.0 5.0 13.1 30.6 0.092 P4KA24 21.6 26.4 1.0 19.4 1.0 5.0 11.5 34.2 0.094 P4KA24A 22.8 25.2 1.0 20.5 1.0 5.0 12.0 33.2 0.094 P4KA27 24.3 29.7 1.0 21.8 1.0 5.0 10.2 39.1 0.096 P4KA27A 25.7 28.4 1.0 23.1 1.0 5.0 10.7 37.5 0.096 P4KA30 27.0 33.0 1.0 24.3 1.0 5.0 9.2 43.5 0.097 P4KA30A 28.5 31.5 1.0 25.6 1.0 5.0 9.7 41.4 0.097 P4KA33 29.7 36.3 1.0 26.8 1.0 5.0 8.4 47.7 0.098 P4KA33A 31.4 34.7 1.0 28.2 1.0 5.0 8.8 45.7 0.098 P4KA36 32.4 39.6 1.0 29.1 1.0 5.0 7.7 52.0 0.099 P4KA36A 34.2 37.8 1.0 30.8 1.0 5.0 8.0 49.9 0.099 P4KA39 35.1 42.9 1.0 31.6 1.0 5.0 7.1 56.4 0.100 P4KA39A 37.1 41.0 1.0 33.3 1.0 5.0 7.4 53.9 0.100 P4KA43 38.7 47.3 1.0 34.8 1.0 5.0 6.5 61.9 0.101 P4KA43A 40.9 45.2 1.0 36.8 1.0 5.0 6.7 59.3 0.101 Notes Pulse test: tp 50 ms Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (1) (2) www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88364 Revision: 09-Feb-11 P4KA6.8 thru P4KA43A Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.336 54 5500 13" diameter paper tape and reel P4KA6.8AHE3/54 (1) Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 10 1 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current Decays to 50 % of IPPM Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0.1 0.1 1 10 100 1000 10 000 0 1.0 2.0 3.0 td - Pulse Width (µs) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform 100 4.0 100 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) tr = 10 µs 75 50 25 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 Measured at Zero Bias 1000 Measured at Stand-Off Voltage VWM 100 0 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance Document Number: 88364 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 P4KA6.8 thru P4KA43A Vishay General Semiconductor 100 60 Hz Resistive or Inductive Load TJ = TJ Max. 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) PD - Power Dissipation (%) 100 75 50 L = 0.375" (9.5 mm) Lead Lengths 25 10 0 0 25 50 75 100 125 150 175 1 200 10 100 TL - Lead Temperature (°C) Number of Cycles at 60 Hz Figure 5. Power Derating Curve Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.026 (0.66) 0.023 (0.58) DIA. 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