RENESAS BCR2PM-14LE

Preliminary Datasheet
BCR2PM-14LE
R07DS0233EJ0100
Rev.1.00
Jan 05, 2011
Triac
Low Power Use
Features
 Planar Passivation Type
 The product guaranteed maximum junction
temperature 150°C.
 IT (RMS) : 2 A
 VDRM : 800 V (Tj = 125°C)
 IFGT I, IRGT I, IRGT III : 10 mA
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2
3
Applications
Electric rice cooker, electric pot, and controller for other heater
Precautions on Usage
When the BCR2PM-14LE is used, do not attach the heat radiating fin.
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Voltage class
14
800
700
840
Unit
Condition
V
V
V
Tj = 125C
Tj = 150C
Page 1 of 6
BCR2PM-14LE
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
2
Unit
A
Surge on-state current
ITSM
10
A
I2t
0.41
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
1
– 40 to +150
– 40 to +150
2.0
W
W
V
A
C
C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
360° conduction
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage Note2
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note3
commutation voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
1.0
2.1
Unit
mA
V

VFGT
—
—
2.0
V

VRGT
—
—
2.0
V

VRGT
—
—
2.0
V

IFGT
—
—
10
mA

IRGT
—
—
10
mA

IRGT
—
—
10
mA
VGD
Rth (j-a)
0.1
—
—
—
—
45
V
C/W
(dv/dt)c
0.5
—
—
V/s
Test conditions
Tj = 150C, VDRM applied
Tj = 25C, ITM = 3 A,
Instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Tj = 150C, VD = 1/2 VDRM
Junction to ambient,
Natural convection
Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 6
BCR2PM-14LE
Preliminary
Performance Curves
Rated Surge On-State Current
10
102
7 Tj = 25°C
5
3
2
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
101
7
5
3
2
100
7
5
3
2
10–1
5
4
3
2
1
2 3
5 7 101
2 3
5 7 102
Gate Trigger Current vs.
Junction Temperature
PGM = 1 W
VGM = 6 V
PG(AV)
= 0.1 W
VGT
IGM = 1 A
IRGT I, IRGT III
7
VGD = 0.1 V
5
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 103
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (II and III)
103
7
5
Typical Example
3
2
IFGT I, IRGT I, IRGT III
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100120 140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
103
7
5
Typical Example
3
2
VFGT I, VRGT I
102
7
5
3
2
VRGT III
101
–60 –40–20 0 20 40 60 80 100120 140 160
Junction Temperature (°C)
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
6
Conduction Time (Cycles at 60 Hz)
10–1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
7
On-State Voltage (V)
3
2
100
7
5
3
2
8
0
100
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
101
7
5
3
2
9
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
(
Natural Convection
No Fins
Print Board
t = 1.6 mm
Solder Land : φ2 mm
)
10–1
101 2 3 5 7102 2 3 5 7 103 2 3 5 7104 2 3 5 7 105
Conduction Time (Cycles at 60 Hz)
Page 3 of 6
BCR2PM-14LE
Preliminary
Allowable Ambient Temperature vs.
RMS On-State Current
160
1.6
140
1.4
360° Conduction
1.2 Resistive,
inductive loads
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
1.0
1.2
100
80
(
Natural Convection
No Fins
Print Board
t = 1.6 mm
Solder Land : φ2 mm
60
40
20
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Typical Example
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140 160
102
7
5
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
Distribution
T2+, G–
1
10
7
5
3
2
100
7
5 T2+, G+
3
2
T2–, G–
–1
–40
103
7
5
4
3
2
Junction Temperature (°C)
Typical Example
0
40
80
120
Junction Temperature (°C)
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
160
)
Curves apply regardless of
conduction angle
Resistive, inductive loads
RMS On-State Current (A)
106
7
5
3
2
10
120
0
0
1.4
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
0
0
Latching Current (mA)
Ambient Temperature (°C)
1.8
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100120 140 160
Junction Temperature (°C)
Page 4 of 6
Preliminary
160
Typical Example
Tj = 125°C
140
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)
100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 125°C)
120
100
80
I Quadrant
III Quadrant
60
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
(Tj = 150°C)
160
40
20
0
100 2 3 5 710
01 2 3 5 7102 2 3 5 7103
Rate of Rise of Off-State Voltage (V/μs)
120
100
80
60
40
20
0
100 2 3 5 710
01 2 3 5 7102 2 3 5 7103
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current vs.
Gate Current Pulse Width
100 (%)
Conditions
VD = 200 V
IT = 1 A
τ = 500 μs
Tj = 125°C
3
2
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics
101
7 Typical Example
5
III Quadrant
100
7
5
Minimum
Characteristics
Value
3
2
10–1 –1
10
2
3
5 7 100
I Quadrant
2 3
Typical Example
Tj = 150°C
140
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (dv/dt = 1V/μs)
100 (%)
BCR2PM-14LE
5 7 101
103
7
5
Typical Example
IRGT III
3
2
102
7
5
3
IFGT I
IRGT I
2
101
100
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
V
A
6V
RG
Test Procedure I
V
RG
Test Procedure II
6Ω
A
6V
V
RG
Test Procedure III
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 5 of 6
BCR2PM-14LE
Preliminary
Package Dimensions
Package Name
TO-220F(2)
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-B
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Ordering Information
Orderable Part Number
Packing
Quantity
BCR2PM-14LE#B00
Bag
100 pcs.
BCR2PM-14LE-AS#B00
Tube
50 pcs.
Note : Please confirm the specification about the shipping in detail.
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Remark
Straight type
AS Lead form
Page 6 of 6
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