ROHM IMH10A

EMH10 / UMH10N / IMH10A
Transistors
General purpose (dual digital transistors)
EMH10 / UMH10N / IMH10A
zExternal dimensions (Units : mm)
zFeatures
1) Two DTC123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
(3)
0.22
(4)
(5)
(2)
1.2
1.6
(1)
0.5
0.13
(6)
0.5 0.5
1.0
1.6
EMH10
Each lead has same dimensions
Abbreviated symbol : H10
ROHM : EMT6
zStructure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
2.0
1.3
(3)
(1)
0to0.1
0.7
0.15
0.9
2.1
The following characteristics apply to both DTr1 and DTr2.
0.1Min.
zEquivalent circuit
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
IMH10A
(3) (2) (1)
R1 R2
(4) (5) (6)
R 1 R2
DTr1
DTr2
0.65
(2)
(4)
(5)
(6)
0.2
1.25
EMH10 / UMH10N
0.65
UMH10N
Abbreviated symbol : H10
IMH10A
DTr1
0.95 0.95
1.9
2.9
(1)
(6)
(2)
(1)
R1=2.2kΩ
R2=47kΩ
(3)
R1=2.2kΩ
R2=47kΩ
R2 R1
(3) (2)
(5)
(6)
(4)
R2 R1
(4) (5)
0.3
DTr2
1.6
1.1
0to0.1
0.3to0.6
zPackaging specifications
0.8
0.15
2.8
Each lead has same dimensions
Package
Type
Taping
Code
T2R
TN
T110
Basic ordering unit (pieces)
8000
3000
3000
−
−
EMH10
UMH10N
−
IMH10A
−
−
−
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H10
EMH10 / UMH10N / IMH10A
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCC
50
V
Supply voltage
Input voltage
12
VIN
IO
Output current
IC (Max.)
EMH10,UMH10N
Power
dissipation
V
−5
100
mA
100
mA
150 (TOTAL)
Pd
IMH10A
mW
300 (TOTAL)
Storage temperature
−55~+150
Tstg
∗1
∗2
°C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
VI (off)
−
−
0.5
VI (on)
1.1
−
−
VO (on)
−
0.1
0.3
V
II
−
−
3.6
mA
VI=5V
IO (off)
−
−
0.5
µA
VCC=50V, VI=0V
DC current gain
GI
80
−
−
−
VO=5V, IO=10mA
Transition frequency
fT
−
250
−
MHz
Input resistance
R1
1.54
2.2
2.86
kΩ
−
Resistance ratio
R2/R1
17
21
26
−
−
Input voltage
Output voltage
Input current
Output current
Unit
Conditions
VCC=5V, IO=100µA
V
VO=0.3V, IO=5mA
IO/II=5mA/0.25mA
∗
VCE=10mA, IE=−5mA, f=100MHz
∗ Transition frequency of the device
zElectrical characteristic curves
10m
VO=0.3V
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI (on) (V)
20
10
5
2
1
Ta=−40°C
25°C
100°C
500m
200m
100m
100µ 200µ
1k
VCC=5V
5m
50
2m
1m
500µ
Ta=100°C
25°C
−40°C
200µ
100µ
50µ
20µ
10µ
5m 10m 20m
50m100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
100
Ta=100°C
25°C
−40°C
50
20
10
5
2
2µ
2m
200
5µ
1µ
500µ 1m
VO=5V
500
DC CURRENT GAIN : GI
100
0
0.5
1.0
1.5
2.0
2.5
3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
EMH10 / UMH10N / IMH10A
Transistors
1
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.