EMT18 / UMT18N Transistors General purpose transistors (dual transistors) EMT18 / UMT18N zExternal dimensions (Units : mm) zFeatures 1) Two 2SA2018 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. (3) 0.22 (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 EMT18 Each lead has same dimensions ROHM : EMT6 zStructure Epitaxial planar type NPN silicon transistor (1) Tr1 (5) (6) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −15 V Collector-emitter voltage VCEO −12 V Emitter-base voltage VEBO −6 V Parameter Collector current IC −500 mA Power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C ∗ 2.0 0.9 Abbreviated symbol : T18 Tr2 (4) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 EMT18 / UMT18N (2) 0to0.1 0.1Min. 0.7 0.15 2.1 zEquivalent circuit (3) 1.3 (3) (2) (1) 1.25 The following characteristics apply to both Tr1 and Tr2. 0.65 (5) (6) 0.2 (4) UMT18N 0.65 Abbreviated symbol : T18 1 120mW per element must not be exceeded. ∗1 EMT18 / UMT18N Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Parameter Conditions Collector-base breakdown voltage BVCBO −15 − − V IC=−10µA Collector-emitter breakdown voltage BVCEO −12 − − V IC=1mA Emitter-base breakdown voltage BVEBO −6 − − V IE=−10µA ICBO − − −0.1 µA VCB=−15V − −0.1 µA VEB=−6V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IEBO − VCE (sat) − hFE 270 − 680 fT − 260 − MHz VCE=−2V, IE=10mA, f=100MHz Cob − 6.5 − PF IC/IB=−200mA/−10mA −100 −250 mV VCE=−2V, IC=−10mA − VCB=−10V, IE=0A, f=1MHz zPackaging specifications Package Type Taping Code T2R TN Basic ordering unit (pieces) 8000 3000 EMT18 UMT18N 1000 1000 VCE=2V Ta=125˚C 500 DC CURRENT GAIN : hFE Ta=25˚C 200 100 Ta=125 20 10 Ta= -40˚C ˚C 50 Ta=25˚C COLLECTOR CURRENT : IC (mA) VCE=2V 500 5 200 50 20 10 5 2 2 1 1 0 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics Ta= -40˚C 100 1 2 5 10 20 50 100 200 500 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) zElectrical characteristic curves 1000 IC/IB=20 500 200 100 Ta=125˚C 50 Ta=25˚C 20 Ta= -40˚C 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) EMT18 / UMT18N 10000 Ta=25˚C 500 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER INPUT CAPACITANCE : Cib (pF) Fig.4 Collector-emitter saturation voltage vs. collector current 1000 IE=0A f=1MHz Ta=25˚C 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 5000 2000 Ta= -40˚C Ta=25˚C 1000 500 Ta=125˚C 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 500 1000 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage VCE=2V Ta=25˚C IC/IB=20 TRANSITION FREQUENCY : fT (MHz) 1000 BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors Fig.5 Base-emitter saturation voltage vs. collector current 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 EMITTER CURRENT : IC (mA) Fig.6 Gain bandwidth product vs. emitter current 1000