EMX18 / UMX18N Transistors General purpose transistors (dual transistors) EMX18 / UMX18N zExternal dimensions (Units : mm) zFeatures 1) Two 2SC5585 chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. (3) 0.22 (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 EMX18 Each lead has same dimensions ROHM : EMT6 2.0 1.3 (3) (2) (1) 1.25 0.65 (5) (6) 0.2 (4) UMX18N 0.65 Abbreviated symbol : X18 zStructure Epitaxial planar type NPN silicon transistor zEquivalent circuit (2) Tr1 (5) (6) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V V Parameter VEBO 6 Collector current IC 500 mA Power dissipation Pd 150 (TOTAL) mW Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C Emitter-base voltage 0~0.1 Abbreviated symbol : X18 (1) Tr2 (4) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 EMX18 / UMX18N (3) 0.7 0.15 0.1Min. 0.9 2.1 The following characteristics apply to both Tr1 and Tr2. ∗1 120mW per element must not be exceeded. ∗1 EMX18 / UMX18N Transistors zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Parameter Conditions Collector-base breakdown voltage BVCBO 15 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA ICBO − − 0.1 µA VCB=15V VEB=6V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IEBO − − 0.1 µA VCE (sat) − 90 250 mV IC/IB=200mA/10mA hFE 270 − 680 − VCE=2V, IC=10mA fT − 320 − MHz VCE=2V, IE=−10mA, f=100MHz Cob − 7.5 − PF VCB=10V, IE=0A, f=1MHz zPackaging specifications Package Type Taping Code T2R TN Basic ordering unit (pieces) 8000 3000 EMX18 UMX18N 1000 VCE = 2V DC CURRENT GAIN : hFE 200 100 10 -40°C 25°C 20 25°C 50 5 -40°C 100 50 20 10 5 2 1 1 0.5 1.0 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 25°C 200 2 0 VCE = 2V Ta = 125°C 500 500 Ta = 1 COLLECTOR CURRENT : IC (mA) 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.2 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectrical characteristic curves 1000 IC/IB = 20 500 200 100 50 Ta = 125°C 25°C 20 -40°C 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) EMX18 / UMX18N Ta = 25°C 500 200 100 50 20 IC/IB = 50 10 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 200 100 50 Cib 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 500 VCE = 2V Ta = 25°C 200 Pulsed Ta = -40°C 25°C 125°C 2000 100 1000 500 200 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage 50 20 100 10 50 5 20 2 10 1 1 2 5 10 20 50 100 200 500 1000 Fig.5 Base-emitter saturation voltage vs. collector current IE = 0A f = 1MHz Ta = 25°C 500 1000 IC/IB = 20 5000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) 1000 10000 fT (MHZ) 1000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage