SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO >7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands. Matching® Applied GaAs HBT DCto4000MHz Operation Single Supply Voltage Excellent Isolation, >50dB at 900MHz 50 In/Out, Broadband Match for Operation from DC4GHz Unconditionally Stable Applications GaAs MESFET Isolation vs. Frequency InGaP HBT 0 SiGe BiCMOS Si BiCMOS -2 0 -4 0 dB SiGe HBT GaAs pHEMT Si CMOS Buffer Amplifier for Oscillator Applications Broadband Gain Blocks IF Amp -6 0 Si BJT RF MEMS 6000 3500 2400 1900 100 InP HBT 900 -8 0 GaN HEMT 500 Frequency MHz LDMOS Parameter Small Signal Gain Min. Specification Typ. 15 12 -13.0 -1.5 17 15 -9.5 1.0 Max. Unit Condition 19 17 dB 850MHz dB 1950MHz Output Power at 1dB Compression dBm 1950MHz Output Third Order Intercept Point dBm 1950MHz Determined by Return Loss (<-10dB) MHz Input Return Loss 9.5 11.2 dB 1950MHz Output Return Loss 7 8 dB 1950MHz Noise Figure 2.5 4.0 dB 1950MHz Device Voltage 2.5 2.8 3.1 V Thermal Resistance 255 °C/W Test Conditions: VS =5V, ID =8mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-20dBm, RBIAS =270, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SGA1263Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (ID) 20 Max Device Voltage (VD) 5 V -12 dBm +150 °C -40 to +85 °C +150 °C Max RF Input Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature mA Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Parameter Bandwidth Frequency Range Device Bias Operating Voltage Operating Current 500MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2 of 6 Min. Specification Typ. Max. Unit Condition T=25°C DC 4000 MHz T=25°C 2.8 8 V mA 16.0 2.7 4.0 -6.9 8.5 61.6 dB dB dBm dBm dB dB 15.7 2.7 2.6 -7.8 8.9 48.4 dB dB dBm dBm dB dB 14.7 3.0 2.8 -7.4 8.8 35.6 dB dB dBm dBm dB dB 14.2 2.8 0.2 -7.0 8.4 33.6 dB dB dBm dBm dB dB T=25°C T=25°C T=25°C T=25°C 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SGA1263Z Pin 1 Function GND 2 3 4 5 6 GND RF IN VCC GND RF OUT Description Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Same as Pin 1. RF input pin. This pin requires the ise of an external DC blocking capacitor chosen for the frequency of operation. Supply Connection. This pin should be bypassed with suitable capacitor(s). Same as Pin 1. RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Application Schematic for +5V Operation at 900MHz Note: A bias resistor is needed for stability over temperature 1uF 50 Ω microstrip 3 4 100pF 68pF 270 Ω V CC=+5V 50 Ω microstrip 6 100pF 1,2,5 Application Schematic for +5V Operation at 1900MHz 1uF 22pF 270 Ω 4 50 Ω microstrip 68pF 50 Ω microstrip 6 3 VCC=+5V 68pF 1,2,5 Recommended Bias Resistor Values Supply 3.6V Voltage(Vs) Rbias (Ohms) DS111011 100 5V 7.5V 9V 12V 275 588 775 1150 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SGA1263Z S21, Id =8 mA, T=+25C dB S12, Id =8 mA, T=+25C 24 0 18 -2 0 12 dB -4 0 -6 0 6 6000 6000 3500 3500 2400 1900 Frequency MHz Frequency MHz S22, Id=8 mA, Ta= +25C S11, Id=8 mA, Ta= +25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 4 of 6 2400 -4 0 1900 -3 0 -4 0 6000 -3 0 3500 dB -2 0 2400 -2 0 1900 -1 0 900 -1 0 900 S22, Id =8 mA, T=+25C 500 S11, Id =8 mA, T=+25C 100 Frequency MHz 0 500 900 100 6000 3500 2400 1900 500 100 900 Frequency MHz 0 100 dB 500 -8 0 0 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz DS111011 SGA1263Z Package Dimensions Pad Layout Dimensions in inches [millimeters] RF OUT RF IN Notes: 1. Provide a large ground pad area under device pins 1, 2, 4, & 5 with many plated via holes as shown. 2. Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SGA1263Z Part Identification Marking 6 5 4 1 2 3 Ordering Information Ordering Code 6 of 6 Description SGA1263Z 7" Reel with 3000 pieces SGA1263ZSQ Sample bag with 25 pieces SGA1263ZSR 7” Reel with 100 pieces SGA1263Z-EVB1 850MHz, 5V Operation PCBA 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011