SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Features Optimum Technology Matching® Applied VS GaAs HBT Temperature Compensation Circuit GaAs MESFET InGaP HBT RF Out / VS RF In SiGe BiCMOS Applications NE W SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT FO R InP HBT Parameter Small Signal Gain Si BiCMOS Receivers, GPS, RFID Cellular, Fixed Wireless, Land Mobile Specification (VS =3V) Min. Typ. Max. Specification (VS =4V) Min. Typ. Max. Unit 15.7 15.5 14.1 4.4 16.6 15.8 15.0 9.9 dB dB dB dBm 800MHz 900MHz 1000MHz 800MHz 5.2 5.6 10.1 10.5 dBm dBm 5.3 7.0 9.0 1.1 1.2 1.2 12.1 13.4 14.8 1.6 1.7 1.7 dBm dBm dBm dB dB dB 15.7 17.6 20.9 23 dB dB dB mA °C/W 900MHz 1000MHz Tone Spacing=1MHz POUT per tone=-13dBm 800MHz 900MHz 1000MHz 800MHz, ZS =50 900MHz, ZS =50 1000MHz, ZS =50 900MHz 900MHz 900MHz 14.0 Output Power at 1dB Compression NO T Internally Matched to 50 800MHz to 1300MHz High Input/Output Intercept Low Noise Figure: 1.2dB Typ. at 900MHz Low Power Consumption Single Voltage Supply Operation Internal Temperature Compensation DE SI GN The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0163Z has been characterized at VD =3V for low power and 4V for medium power applications. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz. S Product Description 3.2 17.0 Input Third Order Intercept Point Noise Figure 5.0 1.7 Input Return Loss 10.0 12.5 Output Return Loss 11.5 15.6 Reverse Isolation 20.9 Device Current 9.5 12.0 14.0 Thermal Resistance 255 Test Conditions: 800MHz to 1300 Application Circuit, TLEAD =25°C, Z0 =ZL =50 Condition RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS150831 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 9 SGL0163Z Absolute Maximum Ratings Rating Unit 45 mA Max Device Voltage (VS) Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TLEAD) 5 V +10 dBm +150 °C -40 to +85 °C +150 °C ESD Rating - Human Body Model (HBM) 1A Class Moisture Sensitivity Level 1 MSL Max Storage Temp Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. S Parameter Max Device Current (ID) DE SI GN Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Device Voltage (VD) vs. Device Current (ID) Over Temperature Load lines for VS = +5 Volts, RB2 = 43 W and 180 W 5.0 VS= +5 V, RB2 = 43 W 4.5 NE W 4.0 V D (Volts) 3.5 3.0 2.5 2.0 -40°C +25°C +85°C VS = +5 V, RB2 = 180 W FO R 1.5 1.0 0.5 0.0 11 16 ID (mA) 21 26 NO T 6 2 of 9 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150831 SGL0163Z Typical RF Performance at VS = 3 V and 4 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25°C P1dB vs Frequency 20.0 18.0 18.0 16.0 +3V 16.0 14.0 +4V 14.0 12.0 12.0 10.0 8.0 +3V 6.0 6.0 +4V 4.0 2.0 800 2.0 850 900 950 1000 1050 1100 1150 1200 1250 SGL-0163 Noise Figure 2.0 0.0 800 1300 850 900 950 1000 1050 1100 1150 1200 1250 1300 Freq. (MHz) Freq. (MHz) Output IP3 vs Frequency 34.0 32.0 1.9 30.0 1.8 28.0 1.7 1.6 1.4 1.3 1.2 1.1 850 900 950 1000 1050 NE W 1.5 1.0 800 DE SI GN 8.0 4.0 NF (dB) 10.0 S P1dB (dBm) 20.0 1100 1150 1200 26.0 24.0 22.0 20.0 +3V +3V 18.0 +4V +4V 16.0 1250 1300 14.0 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 Freq. (MHz) NO T FO R Freq. (MHz) Output IP3 (dBm) Input IP3 (dBm) Input IP3 vs Frequency 22.0 DS150831 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 9 SGL0163Z Typical RF Performance at VS = 3 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25°C |S21| vs. Frequency 18 -1 2 16 -1 4 14 -1 6 -1 8 10 -2 0 900 1000 1100 1200 F re q u e n c y (M H z) 800 900 1000 1100 1200 1300 1200 1300 1200 1300 1200 1300 F re q u e n c y (M H z) |S12| vs. Frequency -1 5 1300 DE SI GN 800 S 12 |S22| vs. Frequency -1 0 -1 7 -1 4 -1 9 S22 (dB) S12 (dB) |S11| vs. Frequency -1 0 S11 (dB) S21 (dB) 20 -2 1 -2 3 -1 8 -2 2 -2 6 -2 5 -3 0 800 900 1000 1100 1200 1300 800 900 1000 1100 F re q u e n c y (M H z) NE W F re q u e n c y (M H z) Typical RF Performance at VS = 4 V -- 800-1300 MHz Evaluation Board -- TLEAD=+25°C |S21| vs. Frequency 20 16 14 12 10 900 NO T 800 1100 -1 6 -2 0 1200 1300 800 900 F re q u e n c y (M H z) 1000 1100 F re q u e n c y (M H z) |S22| vs. Frequency -1 0 -1 4 -1 9 -1 8 S22 (dB) -1 7 -2 1 -2 2 -2 6 -2 3 -3 0 -2 5 800 900 1000 1100 F re q u e n c y (M H z) 4 of 9 -1 4 -1 8 |S12| vs. Frequency -1 5 S12 (dB) 1000 -1 2 S11 (dB) FO R S21 (dB) 18 |S11| vs. Frequency -1 0 1200 1300 800 900 1000 1100 F re q u e n c y (M H z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150831 SGL0163Z RF Performance - 400-500MHz Series L Application Circuit Gain vs. Frequency @ T LEAD =+25C 400-500 MHz Series L Application Circuit Gain vs. Frequency @ TLEAD=+25C 400-500 MHz Series L Application Circuit 24 0 23 IRL, VS=3V 22 -4 IRL, VS=4V ORL, VS=3V ORL, VS=4V 19 18 -8 -12 S 20 Gain (dB) Gain (dB) 21 VS=3V, ID=11mA 17 VS=4V, ID=23mA -16 DE SI GN 16 15 14 400 410 420 430 440 450 460 470 480 490 -20 400 500 410 420 430 440 450 460 470 480 490 500 Frequency(MHz) Frequency(MHz) V S=3V, I D=11mA (Typ.) Freq 400 MHz 450 MHz 500 MHz Gain (dB) 22.0 21.3 20.6 P1dB (dBm) 4.4 5.0 5.7 IIP3 (dBm) 1.3 3.2 4.1 OIP3 (dBm) 23.1 24.7 24.7 NF (dB) 1.1 1.3 1.3 OIP3 (dBm) 29.6 30.3 28.9 NF (dB) 2.0 2.1 2.1 V S=4V, I D=24mA (Typ.) Freq P1dB (dBm) 10.9 11.4 12.0 IIP3 (dBm) 6.5 8.1 7.8 NE W 400 MHz 450 MHz 500 MHz Gain (dB) 23.1 22.2 21.2 RF Performance - 100-800 MHz RC Feedback Application Circuit Return Loss vs. Frequency @ TLEAD=+25C 100-800 MHz Feedback Application Circuit Gain vs. Frequency @ T LEAD=+25C 100-800 MHz Feedback Application Circuit 30 0 IRL, VS=3V 24 22 20 18 IRL, VS=4V -5 VS=4V, ID=23mA ORL, VS=3V ORL, VS=4V Return Loss (dB) 26 Gain (dB) VS=3V, ID=11mA FO R 28 -10 -15 -20 NO T -25 16 14 100 150 200 250 300 -30 350 400 450 500 550 600 650 750 800 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 Frequency(MHz) Frequency(MHz) VS=3V, ID=11mA (Typ.) Freq 100 MHz 300 MHz 500 MHz 800 MHz Freq 100 MHz 300 MHz 500 MHz 800 MHz DS150831 700 Gain (dB) 23.9 21.4 18.7 15.2 Gain (dB) 26.3 23.0 19.8 16.1 P1dB IIP3 (dBm) (dBm) 3.5 -6.8 3.4 -2.5 3.5 0.1 3.7 4.3 VS=4V, ID=23mA (Typ.) P1dB (dBm) 9.2 9.8 9.9 10.0 IIP3 (dBm) -4.1 2.2 5.2 9.7 OIP3 (dBm) 17.1 18.9 18.8 19.5 NF (dB) 1.4 1.2 1.2 1.2 OIP3 (dBm) 22.2 25.1 25.0 25.8 NF (dB) 2.2 1.9 1.7 1.7 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 9 SGL0163Z 100MHz to 800MHz Operation The useful range of the SGL0163Z may be extended down to 100MHz using simple lumped element tuning. Following are two examples: Option 1: A series inductor introduced at the input and output optimizes RF performance over 100MHz wide bands. Band center is selected by adjustment of the inductor values. the example is optimized for the 400MHz to 500MHz band. Option 2: An RC feedback network provides broadband RF performance from 100MHz to 800MHz. The resistor value may be adjusted to select a combination of gain/NF/return loss best suited to the particular application. S Data and schematics for these two options are presented below. DE SI GN Contact RFMD technical support for further guidance. Sirenza Microdevices ECB-101761 Rev. B Sirenza Microdevices ECB-101761 Rev. B 1500 Ohms 10pF 10nH 10nH Cc1 1000pF SGL-0163 IN SGL-0163 1000pF OUT NE W Cc2 OUT IN 470 nH 22nH Rb1 B1 Cd1 Cd2 Cd2 Eval Board FO R NO T +Vcc Eval Board Rb2 Vcc Rb2 Bill of Materials for Rb1 Cd1 Vcc B1 +Vcc GND GND Evaluation Board, 100MHz to 800MHz Ref. Designator Description Value Manufacturer’s Part Number B12 Ferrite Bead 1500 at 100MHz Murata Electronics BLM18HE152SN1D Cc1, Cc2, Cd1 Capacitor, SM, 0603 0.1uF SAMSUNG CL10B103KBNC T/R Cd2 Capacitor, SM, 0603 22pF ROHM MCH185AA220DJK Rb12 Resistor, SM, 0603 47 PHILLIPS 9C06031A47R0 JL HFT Rb2 Resistor, SM, 0603 0 PHILLIPS 9C06031A0R00 JL HFT N/A1 Circuit Board N/A ECB101761 Rev B Notes: 1. Circuit board dielectric material is GETEK, ML200C. 2. B1 and Rb1 recommended for improved K-factor but are optional. Replace with 0 resistor if not used. 6 of 9 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150831 SGL0163Z Pin Names and Description Pin 1 2 Function NC GND Description No Electrical Connection. Provide an isolated (ungrounded) solder pad for mounting integrity. 3 4 5 RF IN DC BIAS GND Voltage Supply Connection. Bypass with suitable capacitors. 6 RF OUT/ BIAS Connection to Ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF Input Pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. DE SI GN S Connection to Ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF Output and Voltage Supply. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation. SOT-363 PCB Pad Layout Pad Layout 0.026 0.035 NE W 0.075 Notes: 1. Provide a ground pad area under device pins 2 & 5 with plated via holes to the PCB ground plane. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides. 0.016 FO R SOT-363 Nominal Package Dimensions NO T Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS150831 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 9 SGL0163Z 800MHz to 1300MHz Application Circuit +VS Application Circuit Element Values Reference Designator RB2 33 nH LB CD2 CD1 B1 1 RB1 (OPT.) CB 3 SGL0163Z 6 CB 0.1 uF SAMSUNG CL10B103KBNC C D2 22 pF ROHM MCH185AA220DJK RB1 1 47 Ohms PHILLIPS 9C06031A47R0 JL HFT 0 Ohms PHILLIPS 9C06031A0R00 JL HFT C B, C D1 RF OUTPUT LB TOKO LL 1608-FSL33NJ 1500 Ohms FAIR-RITE 2508051527y0 @100 MHz Ferrite Bead DE SI GN 4 RF INPUT B1 (OPT.) Manufacturer & Part No. Value S NOTE: Pin 1 must be electrically floating. Do not connect to ground. Provide an isolated solder pad for mounting integrity. RB2 2 Notes: 1. B1 and RB1 provide improved K-factor but are optional. 5 2. RB2 may be introduced as a voltage dropping resistor for use with supply voltages greater than the desired device bias voltage. NE W Evaluation Board Layout CB NO T FO R RF IN ECB-101761 Rev B 8 of 9 Note: Circuit board dielectric material is GETEK, ML200C SGL0163Z CB RF OUT LB RB1 B1 CD1 CD2 RB2 +VS GND 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS150831 SGL0163Z Part Identification Marking 6 5 4 L3Z DE SI GN S 1 2 3 Ordering Information Part Number Description SGL0163Z 7" Reel with 3000 pieces SGL0163ZSQ Sample Bag with 25 pieces 7" Reel with 100 pieces SGL0163ZPCK1 800MHz to 1300MHz PCBA with 5-piece Sample Bag NO T FO R NE W SGL0163ZSR DS150831 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 9