RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features +21dBm, <4.0%EVM, 185mA atVCC =3.3V NC VC1 NC 13 1st 2nd 12 RFOUT/ VC2 11 RF OUT 10 RF OUT 9 NC Input Match 28dB Typical Small Signal Gain 50 Input and Interstage Matching RF IN 3 NC 4 Bias 2400MHz to 2500MHz Frequency Range 5 +23dBm, <4%EVM, 250mA at VCC =5.0V 6 7 8 Functional Block Diagram Applications InterStage Match PDETECT 2 14 VREG2 RF IN 15 VREG1 Single Power Supply 3.0V to 5.0V 1 16 NC NC VCC Package Style: QFN, 16-Pin, 3mmx3mmx0.9mm IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Product Description The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WiFi applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 3mmx3mmx0.9mm, 16-pin, QFN with a backside ground. The RF5125 is designed to maintain linearity over a wide range of supply voltage and power output. Ordering Information RF5125 Standard 25 piece bag RF5125SR Standard 100 piece reel RF5125TR7 Standard 2500 piece reel RF5125WL50PCK-41X Assembled Evaluation Board Kit (5.0V Tune) RF5125WL33PCK-41X Assembled Evaluation Board Kit (3.3V Tune) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 15 RF5125 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage 6.0 V Power Control Voltage (VREG) 4.0 V DC Supply Current 500 mA Input RF Power +5 dBm Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Moisture Sensitivity Parameter MSL2 Min. Specification Typ. Max. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Unit Compliance IEEE802.11b/g IEEE802.11n** Temp=25°C, VREG 1 and 2=2.85V, Freq=2.4Ghz to 2.5GHz, Duty Cycle=1 to 100% unless otherwise noted. Typical Conditions Frequency Output Power Condition 2.40 TBD EVM 2.5 21 GHz dBm VCC =3.3V, VREG =2.85V, 54Mbps, OFDM modulation 3.3 4.0 % VCC =3.3V, POUT =21dBm ACP1 -34 -30 dBc VCC =3.3V, VREG =2.85V, POUT =23.5dBm measured with the standard IEEE802.11b wave form at 1Mbps. ACP2 -54 -50 dBc VCC =3.3V, VREG =2.85V, POUT =23.5dBm measured with the standard IEEE802.11b wave form at 1Mbps. dBm VCC =5V, VREG =2.85V, 54Mbps, OFDM modulation Adjacent Channel Power Output Power EVM TBD 23 3.3 4.0 % POUT =23dBm, RMS, mean ACP1 -34 -30 dBc VCC =5.0V, VREG =2.85V, POUT =23.5dBm measured with the standard IEEE802.11b wave form at 1Mbps. ACP2 -54 -50 dBc VCC =5.0V, VREG =2.85V, POUT =23.5dBm measured with the standard IEEE802.11b wave form at 1Mbps. 2F0 -20 TBD dBm/MHz Measured at VCC =3.3V, VREG =2.85V at POUT =23dBm with 11b waveform at 1Mbps 3F0 -35 TBD dBm/MHz Measured at VCC =3.3V, VREG =2.85V at POUT =23dBm with 11b waveform at 1Mbps 2F0 -10 TBD dBm/MHz Measured at VCC =5.0V, VREG =2.85V at POUT =25dBm with 11b waveform at 1Mbps 3F0 -50 TBD dBm/MHz Measured at VCC =5.0V, VREG =2.85V at POUT =25dBm with 11b waveform at 1Mbps Adjacent Channel Power Harmonics Harmonics 2 of 15 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5125 Parameter Min. Input return loss Gain Specification Typ. -10 27.5 29 Gain Variance Power Detector (P_detect) Max. Unit Condition dB TBD dB At both VCC =3.3V and 5.0V -40°C to +85°C 0.75 ±dB 0.1 1.3 V For POUT =0dBm to 23dBm with VCC =3.3V, 11b 0.1 2.5 V For POUT =0dBm to 25dBm with VCC =5.0V, 11b Current Operating 185 210 mA VCC =3.3V, POUT =+21dBm 250 280 mA VCC =5.0V, POUT =23dBm 95 TBD mA RF=OFF, VCC =3.3V TBD TBD mA RF=OFF, VCC =5.0V IREG 10 mA Shutdown 10 A 105 mA at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean mA at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean Quiescent Current Operating 100 Quiescent 75 IREG 10 mA at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean Shutdown 10 A at +18dBm RF POUT and 54Mbps datarate at <2% EVM RMS, mean Power Supply 3.0 3.3 5 VDC Operating VREG1, VREG2 Input Voltage 2.75 2.85 3.0 VDC Operating VREG1, VREG2 Current 5 10 mA VCC =+3.3VDC 5 10 mA VCC =+5.0VDC Output VSWR 10:1 Input Return Loss -15 -10 dB Turn-on time* .5 1.0 uSec DS110617 Output stable to within 90% of final gain 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 15 RF5125 Pin 1 2 Function NC RF IN Description Interface Schematic Not connected. May be connected to ground (GND). RF input. See evaluation board schematic for details. VCC INTERSTAGE MATCH INPUT MATCH 3 4 5 RF IN NC NC 6 7 VREG1 VREG2 8 PDETECT (or N/C*) 9 10 NC RF OUT RF input. See evaluation board schematic for details. See pin 2. Not connected. May be connected to ground (GND). Do not connect. Note: VCC voltage may be applied to this pin without damage to, or affecting the performance of, the RF5125. Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VREG2 pin may be connected to VREG1 through an external resistor bridge. Provides an output voltage proportional to the output RF level. *In applications where the PDETECT function is not desired, this pin may be left unconnected. No-connect. RF output. RF OUT BIAS 11 12 RF OUT VCC2 13 14 NC VCC1 15 16 NC VCC B Pkg Base GND 4 of 15 Same as pin 10. See pin 10. Power supply for second stage amplifier. Connect as shown on evaluation board schematic. Not connected. May be connected to ground (GND). Power supply for first stage amplifier. Connect as shown on evaluation board schematic. Not connected. May be connected to ground (GND). Supply voltage for the bias reference and control circuits. May be connected with VC1 and VC2 (single-supply voltage). The center metal base of the QFN package provides DC and RF ground as well as heat sink for the amplifier. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5125 Package Drawing 0.10 C A -A- 0.05 C 2 PLCS 3.00 0.90 0.85 1.50 TYP 0.70 0.65 0.05 0.00 2 PLCS 0.10 C B 3.00 12° MAX 2 PLCS 0.10 C B -B- 1.37 TYP 2 PLCS -C- SEATING PLANE 2.75 SQ 0.10 C A 0.10 M C A B 0.60 0.24 TYP 0.30 0.18 PIN 1 ID R.20 1.65 SQ. 1.35 0.50 0.30 Dimensions in mm. Shaded lead is pin 1. 0.50 VCC B NC VCC1 NC Pin Out 16 15 14 13 NC 1 12 VCC2 RF IN 2 11 RF OUT RF IN 3 10 RF OUT DS110617 5 6 7 8 VREG1 VREG2 PDETECT 9 NC NC NC 4 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 15 RF5125 Theory of Operation and Application Information The RF5125 is a two-stage Power Amplifier designed primarily for IEEE802.11g/n WiFi applications where the available supply voltage and current are limited. This PA has a minimum gain of 28dB (29.5dB typical) in the 2.4GHz to 2.5GHz ISM band. The RF5125 has an integrated input and interstage match to 50. Only the output stage requires matching. This amplifier will operate to and below the lowest expected voltage made available by a typical CardBus or PCMCIA card slot in a laptop personal computer. The RF5125 operates from a single supply voltage of 3.0V to 5.0V to deliver specified performance. Power control is provided through two control pins (VREG1 and VREG2). For the best performance and lower current, there is a 68 resistor (not required at 5V operation) placed in series with VREG2 control line. If customer desires, VREG1 and VREG2 can be connected together prior to the series resistor on VREG2 (see applications schematic for details). The output match of the RF5125 provides flexibility to optimize performance on the customer board using minimum component count and the lowest cost bill of materials (BOM). The output match topology follows that of a low pass network and it incorporates a series capacitor as the last component which can also serve as a DC block. Depending on the voltage of operation, the output match will require either one or two shunt capacitors to optimize the return loss and bandwidth. In the case of a 3.3V operation, only one capacitor is required while the 5V operation requires two. The value of the shunt tuning capacitor in the 3.3V case is 2.2pF and its placement is approximately 112mils from the package RF output pin. This location is marked with the reference designator C10 on the evaluation board. For the 5V operation, the first tuning capacitor value is 1.5pF and its placement approximately 90mils from the package (reference designator C10). The second tuning cap value for the 5V operation is 1pF and its placement is approximately 200mils from the package (C11 reference designator). DC bias for the last stage is provided through an RF Choke connected directly at the node between the transistor's collector and output match. This inductor plays a small role on the output match performance so its value must be carefully chosen as to not detune the circuit or lower its Q. RFMD recommends to use a high-Q inductor with a range in value between 5.6nH to 7.5nH. PCB layout and material will affect optimum value and placement for these tuning capacitors. For fastest implementation and best results when designing with the RF5125, RFMD recommends that the evaluation board be copied as close as possible in particular the grounds and distance of components from the package pins (refer to schematic for additional details). The initial PCB layout should include exposed ground area near the shunt tuning capacitors to allow fine tuning of the output match. Smith Chart-based design tools may be used to assist in determining the desired capacitor value and transmission line physical characteristics. Note that the use of a single capacitor output circuit match results in a more sensitive match and slightly reduced RF5125 bandwidth. In this configuration, the RF5125 will exhibit sufficient output spectrum bandwidth to meet IEEE802.11b/g requirements when matched properly. Upon request, RFMD can provide Gerber files for the evaluation board and BOM. High-Q tuning components are not required in every RF5125 based design. However, it is a good practice and highly recommended to start the initial tune with high-Q components then substitute with standard parts and compare against the initial performance. RFMD experience indicates that yield improvements offset the cost difference between "High-Q" and "Low-Q" components. The RF5125 had been primarily characterized with a VREG voltage of 2.85V. However, the RF5125 will operate from a wide range of bias control voltages and within a wide range of frequencies (typically 1800MHz to 2800MHz). If a bias control voltage other than 2.85V is preferred or if a different frequency range (other than 2.4GHz to 2.5GHz) is desired, please contact RFMD Sales or Applications Engineering for assistance. 6 of 15 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5125 Evaluation Board Schematic - 5V VCC P2 R4 R5 1.8 k 56 R6 3 C6 1 F C7 1 F L1 7.5 nH C1 1 nF 1 PDETECT 2 GND P2-3 3 VREG2 P2-4 4 VREG1 P2-1 HDR_1x4 1 16 1 J1 RF IN 50 strip 1 14 12 2 11 3 10 4 9 6 C2 1 nF 7 VREG1 and 2 Coilcraft TL = 90 mils (50 ) from IC (Measured to the center of C10 pad) TL TL TL C10 1.5 pF C13 DNP* C11 1.0 pF TL = 200 mils (50 ) from IC (or 55 mils from center of C13 pad to center of C11 pad) C12 10 pF J2 RF OUT 50 strip 8 C3 1 nF R2 0 DS110617 L2 6.8 nH 13 1 5 5125400, r.- 15 1 PDETECT C9 330 pF Notes: 1. Pins 1, 4, 13, and 15 may be left as No Connect. *DNP=Do Not Place 2. C2 and C3 bypass caps can be removed if VREG1 and VREG2 are supplied with clean voltages. P1 P1-1 C8 4.7 F 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. P3-1 1 VCC 2 GND P3 1 VCC P4 1 GND 7 of 15 RF5125 Evaluation Board Schematic - 3.3V VCC P2 R4 0 R5 27 C6 1 F P2-1 C7 1 F L1 7.5 nH C1 1 nF 1 PDETECT 2 GND P2-3 3 VREG2 P2-4 4 VREG1 HDR_1x4 1 16 1 J1 RF IN 50 strip 1 14 1 12 2 11 3 10 4 9 6 C2 1 nF 7 VREG1 and 2 TL C10 2.2 pF TL = 112 mils (50 ) from IC (Measured to center of C10 pad) TL C11 DNP C12 10 pF 50 strip J2 RF OUT 8 C3 1 nF R2 68 8 of 15 L2 6.8 nH 13 Coilcraft 5 5125400, r.- 15 1 PDETECT C9 330 pF Notes: 1. Pins 1, 4, 13, and 15 may be left as No Connect. 2. C2 and C3 bypass caps can be removed if VREG1 and VREG2 are supplied with clean voltages. *DNP=Do Not Place P1 P1-1 C8 4.7 F 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. P3-1 1 VCC 2 GND P3 1 VCC P4 1 GND DS110617 RF5125 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4, Multi-Layer DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 15 RF5125 Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.031”, Board Material FR-4, Multi-Layer 10 of 15 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5125 5V Operation Typical Performance EVM versus Output Power over Frequency Gain versus Output Power over Frequency VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 32.0 12.0 2400 MHz 2450 MHz 2500 MHz 10.0 30.0 Gain (dB) EVM (%) 8.0 6.0 28.0 4.0 2400 MHz 2450 MHz 2500 MHz 2.0 26.0 0.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 0.0 27.0 3.0 6.0 VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 21.0 24.0 27.0 2.0 PDETECT (V) ICC (A) 18.0 2.5 0.25 0.20 0.15 1.5 1.0 0.10 2400 MHz 2450 MHz 2500 MHz 0.05 0.00 2400 MHz 2450 MHz 2500 MHz 0.5 0.0 3.00 6.00 9.00 12.00 15.00 18.00 21.00 24.00 27.00 Output Power (dBm) DS110617 15.0 VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 3.0 0.30 0.00 12.0 PDETECT versus Output Power over Frequency ICC versus Output Power over Frequency 0.35 9.0 Output Power (dBm) Output Power (dBm) 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 Output Power (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 15 RF5125 3.3V Operation Typical Performance EVM versus Output Power over Frequency Gain versus Output Power over Frequency VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 32.0 14.0 2400 MHz 2450 MHz 2500 MHz 12.0 30.0 Gain (dB) EVM (%) 10.0 8.0 6.0 4.0 28.0 26.0 2400 MHz 2450 MHz 2500 MHz 2.0 24.0 0.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 0.0 27.0 3.0 6.0 12.0 15.0 18.0 21.0 24.0 27.0 PDETECT versus Output Power over Frequency ICC versus Output Power over Frequency 0.40 9.0 Output Power (dBm) Output Power (dBm) VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C VCC=3.3V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C 2.0 0.35 1.5 0.30 PDETECT (V) ICC (A) 0.25 0.20 0.15 0.5 0.10 2400 MHz 2450 MHz 2500 MHz 0.05 0.00 0.00 3.00 6.00 9.00 12.00 15.00 18.00 21.00 24.00 27.00 Output Power (dBm) 12 of 15 1.0 2400 MHz 2450 MHz 2500 MHz 0.0 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 Output Power (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5125 PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3inch to 8inch gold over 180inch nickel. PCB Land Pattern Recommendation PCB land patterns for RFMD components are based on IPC-7351 standards and RFMD empirical data. The pad pattern shown has been developed and tested for optimized assembly at RFMD. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. PCB Metal Land Pattern A = 0.64 x 0.28 (mm) Typ. B = 0.28 x 0.64 (mm) Typ. C = 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B B B B Pin 1 Pin 12 A A 0.50 Typ. A A C A A A A 0.75 Typ. 1.50 Typ. 0.55 Typ. B B B B Pin 8 0.55 Typ. 0.75 Typ. Figure 1. PCB Metal Land Pattern (Top View) DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 13 of 15 RF5125 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier. A = 0.74 x 0.38 (mm) Typ. B = 0.38 x 0.74 (mm) Typ. C = 1.60 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin 16 B B B B Pin 1 0.50 Typ. Pin 12 A A A A C 0.55 Typ. A A A A B 0.55 Typ. B B 0.75 Typ. 1.50 Typ. B Pin 8 0.75 Typ. Figure 2. PCB Solder Mask Pattern (Top View) Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. 14 of 15 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110617 RF5125 RoHS* Banned Material Content RoHS Compliant: Yes Package total weight in grams (g): 0.015 Compliance Date Code: N/A Bill of Materials Revision: - Pb Free Category: Bill of Materials e3 Parts Per Million (PPM) Pb Cd Hg Cr VI PBB PBDE Die 0 0 0 0 0 0 Molding Compound 0 0 0 0 0 0 Lead Frame 0 0 0 0 0 0 Die Attach Epoxy 0 0 0 0 0 0 Wire 0 0 0 0 0 0 Solder Plating 0 0 0 0 0 0 This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above. * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment DS110617 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 15 of 15