RFMD Datasheet Template

RFPA5522
RFMD + TriQuint = Qorvo
RFPA5522
RFPA5522
WiFi Integrated PA Module
4.9GHz to 5.925GHz
Package: QFN, 20-pin,
4.0mm x 4.0mm x 0.9mm
The RFPA5522 is a three-stage power amplifier (PA) designed for
802.11a/n/ac applications. The integrated input and output 50Ω match
greatly reduces the layout area, bill of materials and manufacturability
cost in the customer application. The RFPA5522 is manufactured on an
advanced InGaP heterojunction bipolar transistor (HBT) process and is
capable of achieving linear powers up to 23dBm with an EVM <1.8%
while maintaining excellent power added efficiency. The device is
provided in a 4.0mm x 4.0mm x 0.9mm laminate package that meets or
exceeds the power requirements of IEEE802.11a/n/ac WiFi RF systems.
POUT = 23dBm, 5V, 11ac, 80MHz
MCS9 @ 1.8% EVM
■
POUT = 25dBm, 5V, 11n, 20/40
MHz, MCS7 @ 3% EVM
■
Typical Gain = 33dB
■
3.3v Functionality
■
High PAE
■
Integrated Regulator
■
Input and Output Matched to 50Ω
Integrated Power Detector,
Harmonic filter, and notch filter
NC
1
15
GND
GND
2
14
GND
RFIN
3
13
RFOUT
GND
4
12
GND
PA_EN
5
11
GND
REGULATOR
Applications
■
Customer Premise Equipment
(CPE)
■
Wireless Access Points, Gateways
■
Routers
■
Set-Top Box Applications
■
Picocell/Femtocell
9
10
8
7
6
RC1 RC2
■
16
17
18
19
20
VCC1 VCC2 VCC3 GND GND
Features
NC
NC PDET
Functional Block Diagram
Ordering Information
RFPA5522SB
Standard 5-piece Sample Bag
RFPA5522SQ
Standard 25-piece Sample Bag
RFPA5522SR
Standard 100-piece Reel
RFPA5522TR13
Standard 2500-piece Reel
RFPA5522PCK-410
Fully Assembled Evaluation Board w/5-piece bag
Revision DS201500915
© 2015 RF Micro Devices, Inc.
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RFPA5522
RFMD + TriQuint = Qorvo
Absolute Maximum Ratings
Parameter
DC Supply Voltage
Rating
Unit
-0.5 to +6
VDC
DC Supply Current
1000
mA
Operating Temperature Range
-40 to +85
ºC
Storage Temperature
-40 to +150
ºC
+10
dBm
+15
dBm
Maximum TX Input Power into 50Ω for 11a/n/ac (No Damage).
*R1=0Ω
Maximum TX Input Power 10:1 VSWR for 11a/n/ac (No Damage).
*R1=15Ω
Moisture Sensitivity Level (260°C JEDEC J-STD-020)
*Note: For R1 placement please refer to the applications schematic
MSL2
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied. This is an
InGaP PA designed for high duty cycle applications with
Tj>100oC
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Max
5.00
3.0
5.925
5.180
5.25
3.3
GHz
GHz
V
V
0.5
V
Compliance
Operating Frequency
Extended Operating Frequency
Power Supply VCC
PA Enable - High
PA Enable - Low
802.11a/n/ac
5.180
4.900
3.0
1.7
0
T= +25ºC, VCC=5.0V, VPAEN = 3.0V, Unless otherwise
noted
5V Transmit Performance
11ac 80MHz Output Power
22
11ac 80MHz EVM
23
1.5
-36.5
22
11ac 160MHz Output Power
11ac 160MHz EVM
11n 20/40MHz Output Power
23.5
Margin to Spectral Mask
Operating Current
Revision DS201500915
© 2015 RF Micro Devices, Inc.
-35
31
-2
MCS9 256QAM
dB
dBm
1.8
%
MCS9 256QAM
dB
dBm
%
MCS7 64QAM
3
23.5
dBm
%
-35
-30.5
11a DEVM
Gain
Gain Variation
1.8
25
11n 40MHz EVM
11a Output Power
Condition
25
dB
dBm
3
4
%
54Mbps 64QAM
-30.5
33
-28
dB
dB
dB
Over operating temp; over 100MHz BW
2.5
5
dBm
POUT=23dBm; MCS0 160MHz
5
5
dBm
dBm
POUT=25dBm; MCS0 80MHz
POUT=26dBm; MCS0 40MHz;
dBm
mA
POUT=27dBm; MCS0 20MHz;
POUT=23dBm
POUT=27dBm
5
285
385
330
430
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RFPA5522
RFMD + TriQuint = Qorvo
Specification
Parameter
Unit
Min
Typ
5V Transmit Performance
(continued)
T= +25ºC, VCC=5.0V, VPAEN = 3.0V, Unless otherwise
noted
Quiescent Current
150
4
PA Enable Current
Leakage Current
Second Harmonic
Third Harmonic
1
-45
-50
-5
20
5
-40
-45
mA
uA
uA
dBm/MHz
dBm/MHz
dB
OOB Gain
Input Return Loss
Output Return Loss
Power Detector Range
7
12
12
0.25
dB
dB
dB
V
0.65
0.88
V
PA_EN High
RF OFF; VPAEN= 0V
POUT = 27dBm; OFDM 6Mbps
3.3 – 3.8GHz
7.0 GHz
POUT = 0dBm
POUT = 23dBm
POUT = 27dBm
T= +25ºC, VCC=3.3V, VPAEN = 3.0V, Unless otherwise
noted
3.3V Transmit Performance
11ac 80MHz Output Power
Condition
Max
18
dBm
%
MCS9 256QAM
dB
dBm
%
MCS7 64QAM
dB
dBm
%
MCS9 256QAM
5
dB
dB
dB
dBm
Over temp; over 100MHz BW
POUT=21dBm; MCS0 80MHz
5
dBm
POUT=19dBm; MCS0 160MHz
5
5
210
275
235
300
dBm
dBm
mA
POUT=22dBm; MCS0 40MHz
POUT=23dBm; MCS0 20MHz
POUT=19dBm
POUT=23dBm
150
375
500
mA
uA
1
5
uA
Second Harmonic
Third Harmonic
Input Return Loss
Output Return Loss
-50
-50
12
12
0.25
-45
-45
dBm/MHz
dBm/MHz
dB
dB
V
Power Detector Range
0.5
0.7
11ac 80MHz EVM
11n 20/40MHz Output Power
19
19
1.5
-36.5
20
1.8
-35
3
11n 40MHz EVM
-30
11ac 160MHz Output Power
18
1.5
11ac 160MHz EVM
Gain
Gain Variation
31
-2.5
Margin to Spectral Mask
Operating Current
Quiescent Current
PA Enable Current
Leakage Current
-36.5
33
1.8
-35
+3.0
V
V
PA_EN High
RF OFF; VPAEN = 0V
POUT = 23dBm; OFDM 6Mbps
POUT = 0dBm
Pout = 18dBm
POUT = 23dBm
General Specifications Stability
Output VSWR
Output Power Range
Revision DS201500915
© 2015 RF Micro Devices, Inc.
4:1
0
27
dBm
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CW signal. No spurious above -41.25dBm/MHz for non-harmonic
related signals.
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RFPA5522
RFMD + TriQuint = Qorvo
Specification
Parameter
Unit
Min
Typ
Condition
Max
General Specifications
Stability
VSWR 4:1; Output Power 0 to 27dBm
Output P1dB
Ramp ON/OFF time
CW signal. No spurious above -41.25dBm/MHz for non-harmonic
related signals.
33
dBm
CW signal; 5V
29
dBm
CW signal; 3.3V
200
nS
32
°C/W
10-90% / 90-10% of gain
General Specifications
Thermal Resistance*
At Pout=27dBm
ESD HBM
500
V
EIA/JESD22-114A; All pins
ESD CDM
500
V
JESD22-C101C; All pins
Revision DS201500915
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RFPA5522
RFMD + TriQuint = Qorvo
Timing Diagram
RF/DC Power On/Off Sequence
VCC
PA-EN
RF On
TX RF Signal
RF OFF
Time
Td Td
Td
Td
Note: Observe the timing sequence shown in the diagram above and described below.
DC and RF signal levels per data sheet specification
Revision DS201500915
© 2015 RF Micro Devices, Inc.


Apply V CC prior to turning on or pulsing PA enable.
Turn off PA enable prior to turning off VCC.


Turn on PA enable prior to applying RF signal.
Turn off RF signal prior to turning off PA enable.
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RFPA5522
RFMD + TriQuint = Qorvo
RFPA5522 5V Applications Schematic
VCC2
VCC1
C1
2.2uF
C2
2.2uF
C3
2.2F
20
J1
RF_IN
PAEN
VCC3
R1
0 ohm
C7
10pF
C5
1nF
18
17
16
1
15
2
14
U1
RFPA5522
3
50 strip
19
13
4
12
5
11
6
7
8
9
50 strip
C8
10pF
J2
RF_OUT
10
C6
10pF
R2
560
ohm
C9
3.3nF
R4
750
ohm
PDET
C4
5.6nF
*0402 component size required
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RFPA5522
RFMD + TriQuint = Qorvo
RFPA5522 3.3V Applications Schematic
VCC2
VCC1
C1
2.2uF
VCC3
R1
0 ohm
C2
2.2uF
C3
2.2F
20
19
18
17
16
1
15
2
J1
RF_IN
14
U1
RFPA5522
3
50 strip
C7
10pF
13
4
12
5
11
6
7
8
9
C8
10pF
50 strip
J2
RF_OUT
10
C6
10pF
0Ω
2kΩ
8.2nF
PDET
0Ω
330pF
PA_EN
*0402 component size required
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RFPA5522
RFMD + TriQuint = Qorvo
Pin Out
16
17
18
19
20
VCC1 VCC2 VCC3 GND GND
NC
1
15
GND
GND
2
14
GND
RFIN
3
13
RFOUT
GND
4
12
GND
PA_EN
5
11
GND
9
10
8
7
6
RC1 RC2
NC
NC PDET
Package Drawing
Revision DS201500915
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RFPA5522
RFMD + TriQuint = Qorvo
PCB Patterns
Revision DS201500915
© 2015 RF Micro Devices, Inc.
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RFPA5522
RFMD + TriQuint = Qorvo
Pin Names and Descriptions
Pin
Name
1
NC
2
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
3
RFIN
RF input, internally matched to 50Ω and DC shorted. External DC blocking capacitor required.
4
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
5
PA_EN
6
RC1
Tuning RC pin 1. See EVB schematic for details.
7
RC2
Tuning RC pin 2. See EVB schematic for details.
8
NC
Not connected internally. It may be left floating or connected to ground.
9
NC
Not connected internally. It may be left floating or connected to ground.
10
PDET
Power detector. Provides an output voltage proportional to the RF output power level.
11
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
12
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
13
RFOUT
14
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
15
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
16
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
17
GND
Ground connection. This pin is not connected internally and can be left floating or connected to ground.
18
VCC3
Third stage supply voltage
19
VCC2
Second stage supply voltage.
20
VCC1
First stage supply voltage.
Pkg Base
GND
Ground connection. The back side of the package should be connected to the ground plan though as short of
a connection as possible. PCB vias under the device are recommended.
Revision DS201500915
© 2015 RF Micro Devices, Inc.
Description
Not connected internally. It may be left floating or connected to ground.
PA Enable pin. Apply <0.4VDC. Apply 1.5VDC to VCC to enable PA.
RF output, internally matched to 50Ω and DC shorted. External DC blocking capacitor required.
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