RFMD RF3375_1

RF3375
RF3375General Purpose
Amplifier
GENERAL PURPOSE AMPLIFIER
GND
RoHS Compliant & Pb-Free Product
Package Style: SOT89
Features
4
Internally Matched Input and
Output
13.2dB Small Signal Gain
„
+28dBm Output IP3
„
+16.0dBm Output P1dB
Applications
„
„
1
2
Basestation Applications
Broadband, Low-Noise Gain
Blocks
3
RF OUT
„
GND
„
DC to >6000MHz Operation
RF IN
„
Functional Block Diagram
„
IF or RF Buffer Amplifiers
„
Driver Stage for Power Amplifiers
Product Description
Final PA for Low-Power Applications
The RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block.
Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DCbiasing elements to operate as specified.
„
„
High Reliability Applications
Ordering Information
RF3375
RF337XPCBA-41X
9GaAs HBT
GaAs MESFET
InGaP HBT
General Purpose Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A7 DS050524
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
RF3375
Absolute Maximum Ratings
Parameter
Input RF Power
Rating
Unit
+13
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
80
mA
ICC
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Parameter
Min.
Specification
Typ.
Max.
Unit
Overall
Condition
T=25 °C, ICC =65mA (See Note 1.)
Frequency Range
DC to >6000
MHz
6
GHz
12.5
13.5
dB
Freq=500MHz
12.5
13.5
dB
Freq=1000MHz
12.2
13.2
dB
Freq=2000MHz
12.2
13.2
dB
Freq=3000MHz
3dB Bandwidth
Gain
12.0
13.0
10.0
12.4
Freq=4000MHz
Freq=6000MHz
Noise Figure
4.6
Input VSWR
<1.9:1
Output VSWR
<2.0:1
In a 50Ω system, DC to 500MHz
<1.7:1
In a 50Ω system, 500MHz to 6000MHz
Output IP3
Output P1dB
Reverse Isolation
dB
Freq=2000MHz
In a 50Ω system, DC to 6000MHz
+31.0
+33.9
dBm
+28.0
+30.0
dBm
Freq=2000MHz
+17.0
+18.5
dBm
Freq=1000MHz
+14.5
+16.0
dBm
Freq=2000MHz
-18.0
dB
Thermal
Freq=1000MHz
Freq=2000MHz
ICC =65mA, PDISS =313mW. (See Note 3.)
ThetaJC
175
°C/W
Maximum Measured Junction
Temperature at DC Bias Conditions
139
°C
TCASE =+85°C
Mean Time to Failures
1500
years
TCASE =+85°C
Power Supply
Device Operating Voltage
Operating Current
VPIN =4.81V
With 22Ω bias resistor, T=+25oC
5.18
5.36
V
At pin 8 with ICC =65mA
6.6
7.0
V
At Evaluation Board Connector ICC =65mA
65
80
mA
See Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not
optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3375 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3375 may be
operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be
used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating conditions.
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A7 DS050524
RF3375
Rev A7 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 10
RF3375
Pin
1
Function
RF IN
2
3
GND
RF OUT
Description
Interface Schematic
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
Ground connection.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
RF OUT
( V SUPPLY – V DEVICE )
R = -----------------------------------------------------I CC
4
GND
RF IN
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 80mA over the planned operating temperature. This means that a resistor between the supply and this pin is always
required, even if a supply near 5.0V is available, to provide DC feedback to
prevent thermal runaway. Because DC is present on this pin, a DC blocking
capacitor, suitable for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
Ground connection.
Package Drawing
1.04
0.80
0.50
0.30
3.10
2.90
0.48
0.36
2 PL
1.60
1.40
4.60
4.40
2.60
2.40
1.80
1.45
1.75
1.40
Dimensions in mm.
Shaded lead is pin 1.
4 of 10
0.43
0.38
0.53
0.41
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A7 DS050524
RF3375
Application Schematic
VCC
4
22 Ω
1
100 pF
2
3
100 pF
+
1 μF
100 nH
RF IN
RF OUT
100 pF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
1
VCC1
2
GND
3
4
VCC
CON3
J1
RF IN
50 Ω μstrip
R1
22 Ω
C1
100 pF
337x410, r.1
Rev A7 DS050524
1
2
3
L1
100 nH
C3
100 pF
+ C4
1 μF
50 Ω μstrip
C2
100 pF
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
J2
RF OUT
5 of 10
RF3375
Evaluation Board Layout
Board Size 1.195" x 1.000"
Board Thickness 0.033”, Board Material FR-4
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A7 DS050524
RF3375
Reverse Isolation versus Frequency Across
Temperature
0.0
Junction Temperature versus Power Dissipated
(TAMBIENT=+85°C)
180.000
(ICC=65mA)
170.000
Junction Temperature (°C)
Reverse Isolation (dB)
-5.0
-10.0
-15.0
-20.0
-25.0
-40C
25C
85C
160.000
150.000
140.000
130.000
120.000
110.000
-30.0
100.000
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
0.250
6000.0
0.275
Frequency (MHz)
0.300
0.325
0.350
0.375
0.400
Power Dissipated (Watts)
Power Dissipation versus Device Voltage Across Temperature
(TAMBIENT=+85°C)
Bias Current versus Supply Voltage Across Temperature
(At Evaluation Board Connector, RBIAS=22Ω)
100.0
0.50
0.45
90.0
0.40
70.0
0.30
ICC (mA)
Power Dissipated (W)
80.0
0.35
0.25
0.20
60.0
50.0
0.15
40.0
0.10
-40C
25C
85C
30.0
0.05
0.00
20.0
4.60
4.70
4.80
4.90
5.00
5.10
5.20
VPIN (V)
5.7
5.9
6.1
6.3
6.5
6.7
6.9
7.1
7.3
7.5
7.7
VCC (V)
Bias Current versus Devices Voltage Across Temperature
(At Pin 3 of the RF3375)
100.0
90.0
80.0
ICC (mA)
70.0
60.0
50.0
40.0
30.0
-40C
25C
85C
20.0
10.0
4.6
4.8
5.0
5.2
5.4
5.6
5.8
VPIN (V)
Rev A7 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3375
Gain versus Frequency Across Temperature
16.0
(ICC=65mA)
22.0
15.0
20.0
14.0
18.0
13.0
16.0
Output Power (dBm)
Gain (dB)
Output P1dB versus Frequency Across Temperature
(ICC=65mA)
12.0
11.0
10.0
9.0
8.0
14.0
12.0
10.0
8.0
6.0
-40°C
25°C
85°C
7.0
6.0
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
-40°C
25°C
85°C
4.0
2.0
7000.0
0.0
1000.0
2000.0
Frequency (MHz)
Output IP3 versus Frequency Across Temperature
4000.0
5000.0
6000.0
7000.0
Noise Figure versus Frequency Across Temperature
(ICC=65mA)
(ICC=65mA)
40.0
3000.0
Frequency (MHz)
7.0
35.0
6.0
5.0
Noise Figure (dB)
OIP3 (dBm)
30.0
25.0
20.0
4.0
3.0
2.0
15.0
10.0
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
-40°C
25°C
85°C
1.0
-40C
25C
85C
0.0
0.0
7000.0
500.0
1000.0
1500.0
2000.0
2500.0
3000.0
3500.0
Frequency (MHz)
Frequency (MHz)
Input VSWR versus Frequency Across Temperature
Output VSWR versus Frequency Across Temperature
(ICC=65mA)
2.5
(ICC=65mA)
2.5
VSWR
2.0
VSWR
2.0
1.5
1.5
-40C
25C
85C
1.0
0.0
1000.0
2000.0
3000.0
4000.0
Frequency (MHz)
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5000.0
6000.0
7000.0
-40C
25C
85C
1.0
0.0
1000.0
2000.0
3000.0
4000.0
5000.0
6000.0
7000.0
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A7 DS050524
RF3375
Rev A7 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 10
RF3375
10 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A7 DS050524