SGB-2233(Z)

SGB-2233(Z)
DC to 4.5GHz
Active Bias
Gain Block
SGB-2233(Z)
Preliminary
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3x3 QFN, 16-Pin
Product Description
Features
RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2233 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-2233
product is designed for high linearity 3V gain block applications that require small
size and minimal external components. It is on chip matched to 50Ω and an exterOptimum Technology nal bias inductor choke is required for the application band.
NC
NC
VCC
GaAs HBT
„
„
„
„
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P1dB =6.7dBm at 1950MHz
IP3 =19.0dBm at 1950MHz
Low Thermal
Resistance=221C/W
Applications
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
9
„
Vbias
Matching® Applied
„
SiGe HBT
„
Active
Bias
NC
NC
„
NC
NC
GaAs pHEMT
Si CMOS
Si BJT
NC
NC
GaN HEMT
„
RFOUT
RFIN
3V Battery Operated Applications
LO Buffer Amp
RF Pre-Driver and RF Receive
Path
InP HBT
RF MEMS
Specification
Typ.
Small Signal Gain
11.4
Output Power at 1dB Compression
5.2
Output Third Order Intercept Point
16.5
Noise Figure
Frequency of Operation
DC
Input Return Loss
13.5
Output Return Loss
12.7
Current
21.0
Thermal Resistance
Test Conditions: Z0 =50Ω, VCC =3V, IC =25mA, T=30°C
13.9
12.9
12.5
7.9
6.7
6.4
20.5
19.0
19.0
4.2
19.5
16.7
25.0
221
NC
Min.
NC
Parameter
NC
GND
LDMOS
Max.
14.4
5.2
4500
29.0
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
MHz
dB
dB
mA
°C/W
Condition
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
850MHz
1950MHz
2400MHz
1950MHz
1950MHz
1950MHz
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-103079 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
SGB-2233(Z)
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Unit
mA
Current (IC total)
60
Max Device Voltage (VD)
5
V
Max RF Input Power
20
dBm
Power Dissipation
0.2
W
Max Junction Temperature (TJ)
150
°C
Operating Temperature Range (TL)
-40 to + 85
°C
Max Storage Temperature
-40to+150
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD <(TJ -TL)/RTH, j-l
Detailed Performance Table: VCC =3V, IC =25mA, T=25°C, Z=50Ω
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain (G)
Output 3rd Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
dB
dBm
dBm
14.2
14.1
21.5
8.2
13.9
20.5
7.9
12.9
19.0
6.7
12.5
19.0
6.4
11.2
Input Return Loss (IRL)
Output Return Loss (ORL)
Reverse Isolation (S12)
dB
dB
dB
32.3
34.5
17.7
25.8
25.8
18.0
23.4
22.0
18.2
19.5
16.7
18.9
18.9
16.3
19.2
14.3
15.4
20.2
Noise Figure (NF)
dB
4.3
3.9
3.9
4.2
4.6
5.0
Simplified Device Schematic
16
15
14
13
Active
Bias
1
12
11
2
10
3
9
4
5
2 of 8
6
7
8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103079 Rev H
SGB-2233(Z)
Preliminary
Evaluation Board Data (VCC =VBIAS =3.0V, IC =25mA) Bias Tee substituted for DC feed inductor (L1)
OIP3 vs. Frequency
Gain vs Frequency
24.0
16.0
22.0
15.0
20.0
OIP3 (dBm)
Gain (dB)
14.0
13.0
+25c
12.0
0.9
+85c
0c
-20c
-40C
10.0
0.4
+25c
16.0
14.0
+85c
11.0
18.0
12.0
1.4
1.9
-40c
10.0
0.4
2.4
0.9
1.4
1.9
2.4
Frequency (GHz)
Frequency (GHz)
P1dB vs. Frequency
Noise Figure vs. Frequency
10.0
9.0
7.0
8.0
6.0
Noise Figure (dB)
P1dB (dBm)
7.0
6.0
5.0
+25c
4.0
+85c
3.0
0c
2.0
-20c
1.0
0.9
4.0
3.0
+25c
+85c
2.0
-40c
1.0
-40c
0.0
0.4
5.0
1.4
1.9
0.0
0.0
2.4
0.5
Frequency (GHz)
1.0
1.5
2.0
2.5
3.0
3.5
3.6
3.8
Frequency (GHz)
Current vs. Voltage
Ic vs. Temperature
0.045
0.040
0.0310
0.035
0.0270
0.030
0.0250
0.025
Ic (A)
Ic (mA)
0.0290
0.0230
0.0210
0.020
0.015
0.0190
0.010
0.0170
0.005
0.0150
+85c
+25c
0c
-20c
Temperature
EDS-103079 Rev H
-40c
0.000
2.4
2.6
2.8
3.0
3.2
3.4
Vc (Volts)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 8
SGB-2233(Z)
Preliminary
Evaluation Board Data (VCC =VBIAS =3.0V, IC =25mA) Bias Tee substituted for DC feed inductor (L1) cont.
l S11 l vs. Frequency
0.0
16.0
-5.0
14.0
-10.0
S11 (dB)
S21 (dB)
l S21 l vs. Frequency
18.0
12.0
10.0
-15.0
-20.0
+25c
8.0
+25c
-25.0
+85c
+85c
-40c
-40c
6.0
4.0
0.0
-30.0
1.0
2.0
3.0
4.0
5.0
-35.0
0.0
6.0
1.0
Frequency (GHz)
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
l S12 l vs. Frequency
l S22 l vs. Frequency
-10.0
0.0
-5.0
+25c
-15.0
+85c
-10.0
S22 (dB)
S12 (dB)
-40c
-20.0
-15.0
-20.0
+25c
-25.0
-25.0
+85c
-30.0
-30.0
0.0
1.0
2.0
3.0
4.0
Frequency (GHz)
4 of 8
5.0
6.0
-35.0
0.0
-40c
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103079 Rev H
SGB-2233(Z)
Preliminary
Pin
1, 2,
4, 6,
7, 8,
11,
12, 14
3
5
10
13
16
Backside
Function
NC
RF IN
GND
RF OUT
VBIAS
VCC
GND
Description
These are no connect pins. Leave them unconnected on the PC board.
RF input pin. A DC voltage should not be connected externally to this pin
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
RF Output pin. Bias is applied to the Darlington stage thru this pin.
This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
This is Vcc for the active bias circuit.
The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the
main thermal path.
Recommended Land Pattern
Dimensions in millimeters (inches)
1.58 [0.062]
0.50 [0.020]
0.26 [0.010]
0.38 [0.015]
0.29 [0.011]
0.21 [0.008]
1.58 [0.062]
0.75 [0.030]
0.005 CHAMFER
(8PL)
Ø0.38 [Ø0.015]
Plated Thru (4PL)
Recommended PCB Soldermask for Land Pattern
0.50 [0.020]
0.25 [0.010]
0.53 [0.021]
3.17 [0.125]
1.20 [0.047]
0.46 [0.018]
1.20 [0.047]
EDS-103079 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
SGB-2233(Z)
Preliminary
Package Drawing
Dimensions in millimeters (inches)
Refer to drawing posted at www.rfmd.com for tolerances.
Typical Evaluation Board Schematic for 3.0V
Vcc
C4
C3
Vbias
NC
NC
NC
NC
RFIN
C1
RFOUT
RFOUT
NC
NC
C2
NC
NC
NC
GND
Option
6 of 8
NC
VCC
RFIN
L1
NC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103079 Rev H
SGB-2233(Z)
Preliminary
Evaluation Board Layout and Bill of Materials
C4
C3
L1
C1
C2
Board Material GETEK, 31mil thick, Dk=4.2, 1oz copper
Component Values By Band
Designator
500MHz
850MHz
1950MHz
2400MHz
1000pF
C3
1000pF
1000pF
1000pF
C4*
1uF
1uF
1uF
1uF
C1, C2
220pF
68pF
43pF
22pF
L1
68nH
33nH
22nH
18nH
*C4 is optional depending on application and filtering. Not required for SGB device operation.
Note: The amplifier can be run from a 5V supply by simply inserting a 82Ω resistor in series with VCC.
Part Identification
The part will be symbolized with an “SGB2233” for Sn/Pb plating or “SGB22Z” for RoHS green compliant product. Marking
designator will be on the top surface of the package.
Ordering Information
7 of 8
Part Number
Reel Size
Devices/Reel
SGB-2233
13”
3000
SGB-2233Z
13”
3000
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103079 Rev H
SGB-2233(Z)
8 of 8
Preliminary
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-103079 Rev H