DRAFT DRAFT RFFM8511 4.9GHz to 5.85GHz 802.11a/n/ac WiFi Front End Module The RFFM8511 provides a complete integrated solution in a single front end module (FEM) for WiFi 802.11a/n/ac systems. The ultra-small factor and integrated matching minimizes layout area in the customer’s application and greatly reduces the number of external components. This simplifies the total front end solution by reducing the bill of materials, system footprint, and manufacturing cost. The RFFM8511 integrates a 5GHz power amplifier (PA), single pole double throw switch (SP2T), LNA with bypass, and a power detector coupler for improved accuracy. The device is provided in a 2.5mm x 2.5mm x 0.40mm, 16-pin QFN package. LNA_EN C_RX GND ANT 16 15 14 13 GND 1 12 GND 2 11 VCC GND 3 10 VCC VCC 4 9 Vmode RX 7 5 6 PDET PA_EN 8 GND TX Functional Block Diagram Ordering Information RFFM8511SB Standard 5-piece sample bag RFFM8511SQ Standard 25-piece bag RFFM8511SR Standard 100-piece reel RFFM8511TR7 Standard 2500-piece reel RFFM8511PCK-410 Fully assembled eval board w/ 5-piece bag DRAFT RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® ® RFFM8511 Package: QFN, 16-pin, 2.5mm x 2.5mm x 0.40mm Features ■ POUT = +18.0dBm at 3.6V, 802.11ac 80MHz MCS9 256QAM at 1.8% Dynamic EVM Compliance ■ POUT = +19.0dBm, 11n 20MHz 2.5% (-32dB)EVM ■ POUT = +21.0dBm at 3.6V, 802.11ac 80MHz MCS0 at Spectral Mask Compliance ■ Input and Output Matched to 50Ω ■ Integrated 5GHz PA, SP2T Switch, LNA, and PDET ■ Low Height Package, Suited for Module and Chip On Board (CoB) designs ■ Supports low power mode for improved efficiency Applications ■ Cellular Handsets ■ Mobile Devices ■ Tablets ■ Consumer Electronics ■ Gaming ■ Netbooks/Notebooks ■ TV/Monitors/Video DRAFT DS140711 RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 9 DRAFT DRAFT RFFM8511 PRELIMINARY Absolute Maximum Ratings Parameter Rating DC Supply Voltage (No RF Applied) 6 V PA Enable Voltage -0.5 to 5 VDC DC Supply Current 500 mA Operating Temperature Range -40 to +85 ºC Storage Temperature -40 to +150 ºC Maximum TX Input Power for 11a/n (No Damage) +12 dBm LNA On Maximum RX input power (No damage) +12 dBm Bypass Mode Maximum RX input power (No damage) +25 dBm Moisture Sensitivity Caution! ESD sensitive device. Unit RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. MSL2 Nominal Operating Parameters Specification Parameter Unit Min Typ Max 3.6 3.1 0 5.825 5.925 70 85 4.2 VCC 0.2 Condition 802.11a, 802.11n, 802.11ac Compliance Operating Frequency Extended Frequency Nominal Operating Temperature Operating Temperature Power Supply VCC Control Voltage-high Control Voltage-low 5.18 4.9 -10 -40 3.0 2.8 GHz GHz ºC ºC V V V PA_EN, C_RX, LNA_EN, VMODE T = -10°C to +70°C, VCC = 3.3V to 4.2V, 50% Duty Cycle unless otherwise noted Transmit (TX-ANT) High Power Mode Output Power 17.0 80MHZ 802.11ac Dynamic EVM Output Power 15.0 80MHZ 802.11ac Dynamic EVM 18.0 dBm 1.5 1.8 -36.5 -35.0 16.0 dB dBm 1.5 1.8 % -36.5 -35.0 dB Output Power 19.0 20/40MHz 802.11n Dynamic EVM 2.5 3 % -32.0 -30.5 dB Output Power 16.5 20/40MHz 802.11n Dynamic EVM dBm 17.5 dBm 2.5 3 -32.0 -30.5 T = -10°C to +70°C, VCC = 3.0V to 4.2V T = 25°C, VCC = 3.6V T = -10°C to +70°C, VCC = 3.0V to 4.2V % dB 40MHz 802.11n Spectral mask Output Power 20 dBm 20/80MHz 802.11ac Spectral mask Output Power 21 dBm TX Port Return Loss 10 18 dB ANT Port Return Loss 10 18 dB DRAFT T = 25°C, VCC = 3.6V % T = 25°C, VCC = 3.6V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9 DRAFT DRAFT RFFM8511 PRELIMINARY Specification Parameter Unit Min Typ Condition Max T = -10°C to +70°C, VCC = 3.3V to 4.2V, 50% Duty Cycle unless otherwise noted Transmit (TX-ANT) High Power Mode (continued) Large Signal Gain Gain flatness over any 80MHz BW Gain flatness across band 25 28 23 28 -0.5 0.5 -1 Operating Current Quiescent Current dB T = 25°C, VCC = 3.6V dB T = -10°C to +70°C, VCC = 3.0 to 4.2V dB 1 dB 210 250 mA POUT = +17dBm, T = 25°C, VCC = 3.6V 240 280 mA POUT = +19dBm, T = 25°C, VCC = 3.6V 280 mA POUT = 21dBm, T = 25°C, VCC = 3.6V 150 mA PA_EN Current 70 150 uA Second Harmonic -45 -30 dBm/MHz Third Harmonic -45 -30 dBm/MHz Power Detector Voltage 0.27 V POUT = 0dBm 0.81 V POUT = +17dBm 0.98 V POUT = +21dBm dB 3:1 VSWR Variation from 0-360° load pull -1.5 ANT-RX Isolation (TX enabled and maximum power) 1.5 28 POUT = +21dBm, T = 25°C, VCC = 3.6V, 6Mbps 802.11a dB T= 25°C, VCC= 3.6V,50% Duty Cycle unless otherwise noted Transmit (TX-ANT) Low Power Mode Output Power 10.0 40/80MHz 802.11ac Dynamic EVM 1.5 1.8 dBm -36.5 -35.0 Output Power 12.0 20MHz 802.11n Dynamic EVM 2.5 3.0 -32.0 -30.5 T = 25°C, VCC = 3.6V % dB dBm T = 25°C, VCC = 3.6V % dB 40MHz 802.11n Spectral mask Output Power 11.0 dBm 20/80MHz 802.11ac Spectral mask Output Power 12.0 dBm 0.27 V POUT = 0dBm 0.50 V POUT = +10dBm Power Detector Voltage T = 25°C, VCC = 3.6V 0.58 V POUT = +12dBm 80MHz 802.11ac Operating Current 150 mA POUT = +10dBm 20MHz 802.11n Operating Current 160 mA POUT = +12dBm VMODE Control Line Current 160 Gain 24 500 27 µA dB T = +25°C, VCC = 3.0 to 4.2V, C_RX=LNA_EN=High, PA_EN=Low, Unless otherwise noted. Receive (ANT-RX)-LNA On Gain Gain flatness over any 80MHz BW Gain flatness across band Noise Figure DRAFT POUT = +10dBm, 80MHz 802.11ac 16 dB -0.5 10 14 0.5 dB -1 1 dB 3 dB 2.5 T = 25°C, VCC = 3.6V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 9 DRAFT DRAFT RFFM8511 PRELIMINARY Specification Parameter Unit Min Typ 9 12 ANT Port Return Loss 6 10 dB Nominal Input P1dB -8 -4 dBm Rx Port Return Loss Condition Max dB Current Consumption 10 18 mA LNA_EN Control Current 130 200 µA LNA Turn On Time 400 600 nS Receive (ANT-RX)-Bypass Mode T = 25°C, VCC = 3.6V T = +25°C, VCC = 3.3to 4.2V, C_RX=LNA_EN=High, PA_EN=Low, Unless otherwise noted. LNA Bypass Current Nominal Insertion Loss 2.0 10 µA 6 10 dB RX Port Return Loss 10 20 ANT Port Return Loss 9 20 dB Nominal Input P1dB 15 20 dBm Control Line Impedance-PA_EN 75 kΩ Control Line Impedance-LNA_EN 78 kΩ Control Line Impedance-C_RX 27 Switch Control Current – High Each Line 5 100 µA Switch Control Current – Low Each Line 0.5 10 µA Switching Speed 100 500 ns ESD – Human Body Model 1000 ESD – Charge Device Model 500 PA Turn-on Time 200 PA Stability +20 T = 25°C, VCC = 3.6V dB T = 25°C, VCC = 3.6V General Specifications Maximum Input Power Ruggedness Leakage Current DRAFT 2 MΩ V V 500 ns 10% to 90% dBm No spurious above -41.25dBm/MHz up to 4:1 VSWR 12 dBm Into 50Ω, VCC = 3.3V, 25°C 12 dBm 6:1 VSWR, VCC = 3.3V, 25°C 5 dBm 10:1 VSWR, VCC = 3.3V, 25°C 10:1 VSWR At typical operating conditions 10 uA VCC = 4.8V, T = 25°C, RF OFF, All control lines floating RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 9 DRAFT DRAFT RFFM8511 PRELIMINARY Switch Control Logic Truth Table Operating Mode PA_EN LNA_EN C_RX Vmode Standby Low Low Low Low 802.11a/n/ac TX High Power High Low Low Low 802.11a/n/ac TX Low Power High Low Low High 802.11a/n/ac RX Gain Low High High Low 802.11a/n/ac RX Bypass Low Low High Low Notes: • PA_EN and TX switch control are tied together internally. • High = 2.8 to VCC. Low = 0V to 0.2V Timing Diagram Transmit Timing Diagram Power ON / OFF Sequence VCC Apply 3.6v to pins 4, 10, and 11 Range is set Per the data sheet PA_EN For Transmit: apply 3.1v to pin-6 Level is set Per the data sheet RF signal ON time is 0.5uS max. Set RF input to required level. TX RF Signal LNA_EN RX is Low during TX Both controls must be OFF during transmit. The order is not critical. Apply a max of 0.4v to pins 15 and 16 C_RX RX is Low during TX Time 0.2uSec 0.2uSec 0.2uSec 0.2uSec Note1: RF Signal for each specific mode is applied after the DC bias is applied Note2: Total ON/OFF time includes from 10% of control switching to 90% of RF power Note3: Listed values on diagram are typical. The maximum is 0.5us for each mode DRAFT RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 9 DRAFT RFFM8511 DRAFT PRELIMINARY Evaluation Board Schematic DRAFT RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 9 DRAFT RFFM8511 DRAFT PRELIMINARY Pin Out LNA_EN C_RX GND ANT 16 15 14 13 GND 1 12 GND 2 11 VCC GND 3 10 VCC VCC 4 9 Vmode RX 5 6 PDET PA_EN 7 GND 8 TX Package Drawing DRAFT RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 9 DRAFT RFFM8511 DRAFT PRELIMINARY PCB Patterns Notes: 1. Thermal vias for center slug “C” should be incorporated into the PCB design. The number and size of thermal vias will depend on the application, power, dissipation and electrical requirements. Example of the number and size of vias can be found on the RFMD evaluation board layout (gerber files are available upon request) DRAFT RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 9 DRAFT DRAFT RFFM8511 PRELIMINARY Pin Names and Descriptions Pin Name 1 GND 2 RX 3 GND This pin is not connected internally and can be left floating or connected to ground. 4 VCC Supply voltage for the LNA and PA Regulator. See applications schematic for biasing and bypassing components. 5 PDET Power detector voltage for the TX path. May need external series R/shunt C to adjust voltage level and to filter RF noise. 6 PA_EN Control voltage for the PA and TX switch. See truth table for proper settings. 7 GND 8 TX 9 VMODE High/Low power mode control signal. VMODE can be low or floating for nominal conditions (high power mode). Applying 2.8V or greater to this pin enables low power mode. 10 VCC Supply voltage for the first and second stage of the PA. See applications schematic for biasing and bypassing components. 11 VCC Supply voltage for the final stage of the PA. See applications schematic for biasing and bypassing components. 12 GND This pin is not connected internally and can be left floating or connected to ground. 13 ANT RF bidirectional antenna port matched to 50Ω. An External DC block is required 14 GND This pin is not connected internally and can be left floating or connected to ground. 15 C_RX Receive switch control pin. See switch truth table for proper level. 16 LNA_EN Pkg Base GND DRAFT Description This pin is not connected internally and can be left floating or connected to ground. RF output port for the 802.11a/n/ac LNA. This port is matched to 50Ω and DC blocked internally. This pin is not connected internally and can be left floating or connected to ground. RF input port for the 802.11a/n/ac PA. Input is matched to 50Ω and DC blocked internally Control voltage for the LNA. When this pin is set to a LOW logic state, the bypass mode is enabled. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., PCB vias under the device are recommended. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DRAFT DS140711 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 9