RFPA5208 RFPA5208 WiFi Power Amplifier 2.4GHz to 2.5GHz The RFPA5208 is a three-stage power amplifier (PA) designed for WiFi 802.11b/g/n/ac systems. The integrated input and output 50Ω match and integrated regulator minimizes layout area in the customer’s application, reduces the bill of materials and manufacturability cost. Performance is focused on a balance of efficiency and linear power that increases the range of connection. The RFPA5208 integrates the Power Amplifier (PA), regulator and a power detector coupler for improved accuracy. The device is provided in a 4mm x 4mm x 1.05mm, 10-pin laminate package. Package: Laminate, 10-pin, 4mm x 4mm x 1.05mm max Features ■ POUT = +28dBm, 802.11n, 20MHz MCS7 at -30dB Dynamic EVM ■ POUT = +26dBm, 802.11ac, 20MHz MCS8 at -35dB Dynamic EVM ■ 40dB Typical Gain ■ High efficiency ■ Input and Output Matched to 50Ω ■ Integrated 2GHz PA, Regulator and PDET Applications INPUT MATCH 10 ■ Gateways ■ Routers ■ Microcells ■ Consumer Premise Equipment 1 GND 2 9 NC VCC 3 8 GND GND 4 7 GND PDET 5 6 RFOUT OUTPUT MATCH Wireless Access Points PA_EN RFIN REGULATOR ■ Functional Block Diagram Ordering Information RFPA5208SB Sample bag with 5 pieces RFPA5208SQ Sample bag with 25 pieces RFPA5208SR 7" Reel with 100 pieces RFPA5208TR7 7" Reel with 750 pieces RFPA5208PCK-410 Assembled Evaluation Board plus 5 loose pcs RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS140324 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 7 RFPA5208 Absolute Maximum Ratings Parameter Rating Unit PA Enable Voltage -0.5 to +6.0 -0.5 to 5 VDC VDC DC Supply Current 1000 mA Operating Temperature -40 to +85 ºC Storage Temperature -40 to +150 ºC +5 dBm DC Supply Voltage (No RF Applied) Input RF Power into 50Ω Load for 11b/g/n/ac (No Damage) Moisture Sensitivity Level Caution! ESD sensitive device. RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this document revision), halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. MSL3 Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Compliance 802.11a, 802.11n, 802.11ac Operating Frequency 2.412 2.484 GHz Extended Frequency 2.4 2.5 GHz Power Supply (VCC) 4.75 5 5.25 V Control Voltage (High) 2.9 3 3.1 V 0 0.20 V Control Voltage (Low) Functional with reduced performance PA_EN VCC = 5V; PA_EN = 3V; Temp = 25˚C; Freq=2412-2484MHz; unless otherwise noted High Power Mode PSAT 35 dBm dBm CW signal. Linear Output Power 11n 20MHz 26 28 11n 40MHz 25 27 11ac 20MHz 26 11ac 40MHz 25 With input shunt capacitor Dynamic EVM 11n 20MHz and 40MHz -30 dB MCS7 11ac 20MHz and 40MHz -35 dB MCS8, MCS9 40 dB Gain Gain Flatness Across the Band -1.5 1.5 Input Return Loss 10 15 Output Return Loss 8 10 dB dB dB 20MHz 802.11n Operating Current 530 650 mA POUT = +27dBm 20MHz 802.11n Operating Current 590 700 mA POUT = +28dBm Quiescent Current 225 2nd Harmonics -30 -27 dBm/MHz 3rd Harmonics -45 -44 dBm/MHz mA POUT = +28dBm Margin to 802.11b Spectral Mask 2 dBc POUT = +28dBm; 11Mbps; CCK signal Margin to 802.11n Spectral Mask 2 dBc POUT = +26dBm; HT20/HT40 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140324 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 7 RFPA5208 Specification Parameter Unit Min Typ Condition Max VCC = 5V; PA_EN = 3V; Temp = 25˚C; Freq=2412-2484MHz; unless otherwise noted High Power Mode (continued) Power Detector Voltage 0.15 V POUT = +11dBm 0.45 V POUT = +28dBm PDET Variation Across Band -0.5 0.5 dB PDET Variation Over Temperature -1.5 1.5 dB General Specifications Leakage Current PA_EN Current TX Turn On/Off Rise/Fall Time 50 100 uA V=5V; PA_EN = 0V 25 50 uA PA_EN= 3.0V 10 uA PA_EN = 0V 0.8 us 0.4 Ruggedness 4:1 (VSWR) Stability 4:1 (VSWR) No damage; CW; Pin=+5dBm; 50% duty cycle CW; Non harmonically related spurs < -42dBm/MHz ESD – Human Body Model 1000 V JESD22-A114; Class 1C; All pins ESD – Charge Device Model 1000 V JESD22-C101C; Class 1C; All pins Thermal Resistance (θjc) 31 °C/W POUT = 28dBm; Duty Cycle=85%; VCC = 5V Junction Temperature (Tj-max) 158 °C POUT = 28dBm; Duty Cycle=85%; VCC = 5V Duty Cycle for Long Term Reliability 85 % RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140324 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 7 RFPA5208 Applications Schematic Note: Input shunt cap improves 11ac linear power @ EVM -35dB. Input cap not required for 11n. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140324 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 7 RFPA5208 Evaluation Board Schematic Note: Input shunt cap improves 11ac linear power. Input cap not required for 11n. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140324 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 7 RFPA5208 Pin Out PA_EN RFIN 1 10 GND 2 9 NC VCC 3 8 GND GND 4 7 GND PDET 5 6 RFOUT Package Outline (Dimensions in millimeters) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140324 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 7 RFPA5208 Pin Names and Descriptions Pin Name Description 1 RFIN RF input port is matched to 50Ω and DC blocked internally. 2 GND Ground connection. 3 VCC Voltage connected internally to the collectors of the RF device. To achieve specified performance, the layout of the pin should match the Recommended Land Pattern 4 GND Ground connection. 5 PDET Power detector provides an output voltage proportional to the RF output power level. 6 RFOUT 7 GND Ground connection. 8 GND Ground connection. 9 NC 10 PA_EN Pkg Base GND RF output is matched to 50Ω and DC blocked internally. No connect. Please ensure this pin is floating, do not connect. PA Enable pin, apply <0.4Vdc to turn PA off. Apply 1.75Vdc to 5Vdc to enable PA. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., PCB vias under the device are recommended. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140324 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 7