RFMD Datasheet Template

RFPA5208
RFPA5208
WiFi Power Amplifier
2.4GHz to 2.5GHz
The RFPA5208 is a three-stage power amplifier (PA) designed for
WiFi 802.11b/g/n/ac systems. The integrated input and output
50Ω match and integrated regulator minimizes layout area in the
customer’s application, reduces the bill of materials and
manufacturability cost. Performance is focused on a balance of
efficiency and linear power that increases the range of connection.
The RFPA5208 integrates the Power Amplifier (PA), regulator and
a power detector coupler for improved accuracy. The device is
provided in a 4mm x 4mm x 1.05mm, 10-pin laminate package.
Package: Laminate, 10-pin,
4mm x 4mm x 1.05mm max
Features
■
POUT = +28dBm, 802.11n, 20MHz
MCS7 at -30dB Dynamic EVM
■
POUT = +26dBm, 802.11ac, 20MHz
MCS8 at -35dB Dynamic EVM
■
40dB Typical Gain
■
High efficiency
■
Input and Output Matched to 50Ω
■
Integrated 2GHz PA, Regulator
and PDET
Applications
INPUT
MATCH
10
■
Gateways
■
Routers
■
Microcells
■
Consumer Premise Equipment
1
GND
2
9
NC
VCC
3
8
GND
GND
4
7
GND
PDET
5
6
RFOUT
OUTPUT
MATCH
Wireless Access Points
PA_EN
RFIN
REGULATOR
■
Functional Block Diagram
Ordering Information
RFPA5208SB
Sample bag with 5 pieces
RFPA5208SQ
Sample bag with 25 pieces
RFPA5208SR
7" Reel with 100 pieces
RFPA5208TR7
7" Reel with 750 pieces
RFPA5208PCK-410
Assembled Evaluation Board plus 5 loose pcs
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
®
DS140324
®
RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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RFPA5208
Absolute Maximum Ratings
Parameter
Rating
Unit
PA Enable Voltage
-0.5 to +6.0
-0.5 to 5
VDC
VDC
DC Supply Current
1000
mA
Operating Temperature
-40 to +85
ºC
Storage Temperature
-40 to +150
ºC
+5
dBm
DC Supply Voltage (No RF Applied)
Input RF Power into 50Ω Load for 11b/g/n/ac (No Damage)
Moisture Sensitivity Level
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony in solder.
MSL3
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Unit
Min
Typ
Condition
Max
Compliance
802.11a, 802.11n, 802.11ac
Operating Frequency
2.412
2.484
GHz
Extended Frequency
2.4
2.5
GHz
Power Supply (VCC)
4.75
5
5.25
V
Control Voltage (High)
2.9
3
3.1
V
0
0.20
V
Control Voltage (Low)
Functional with reduced performance
PA_EN
VCC = 5V; PA_EN = 3V; Temp = 25˚C;
Freq=2412-2484MHz; unless otherwise noted
High Power Mode
PSAT
35
dBm
dBm
CW signal.
Linear Output Power
11n 20MHz
26
28
11n 40MHz
25
27
11ac 20MHz
26
11ac 40MHz
25
With input shunt capacitor
Dynamic EVM
11n 20MHz and 40MHz
-30
dB
MCS7
11ac 20MHz and 40MHz
-35
dB
MCS8, MCS9
40
dB
Gain
Gain Flatness Across the Band
-1.5
1.5
Input Return Loss
10
15
Output Return Loss
8
10
dB
dB
dB
20MHz 802.11n Operating Current
530
650
mA
POUT = +27dBm
20MHz 802.11n Operating Current
590
700
mA
POUT = +28dBm
Quiescent Current
225
2nd Harmonics
-30
-27
dBm/MHz
3rd Harmonics
-45
-44
dBm/MHz
mA
POUT = +28dBm
Margin to 802.11b Spectral Mask
2
dBc
POUT = +28dBm; 11Mbps; CCK signal
Margin to 802.11n Spectral Mask
2
dBc
POUT = +26dBm; HT20/HT40
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140324
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFPA5208
Specification
Parameter
Unit
Min
Typ
Condition
Max
VCC = 5V; PA_EN = 3V; Temp = 25˚C;
Freq=2412-2484MHz; unless otherwise noted
High Power Mode (continued)
Power Detector Voltage
0.15
V
POUT = +11dBm
0.45
V
POUT = +28dBm
PDET Variation Across Band
-0.5
0.5
dB
PDET Variation Over Temperature
-1.5
1.5
dB
General Specifications
Leakage Current
PA_EN Current
TX Turn On/Off Rise/Fall Time
50
100
uA
V=5V; PA_EN = 0V
25
50
uA
PA_EN= 3.0V
10
uA
PA_EN = 0V
0.8
us
0.4
Ruggedness
4:1 (VSWR)
Stability
4:1 (VSWR)
No damage; CW; Pin=+5dBm; 50% duty cycle
CW; Non harmonically related spurs < -42dBm/MHz
ESD – Human Body Model
1000
V
JESD22-A114; Class 1C; All pins
ESD – Charge Device Model
1000
V
JESD22-C101C; Class 1C; All pins
Thermal Resistance (θjc)
31
°C/W
POUT = 28dBm; Duty Cycle=85%; VCC = 5V
Junction Temperature (Tj-max)
158
°C
POUT = 28dBm; Duty Cycle=85%; VCC = 5V
Duty Cycle for Long Term Reliability
85
%
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140324
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFPA5208
Applications Schematic
Note: Input shunt cap improves 11ac linear power @ EVM -35dB. Input cap not required for 11n.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140324
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFPA5208
Evaluation Board Schematic
Note: Input shunt cap improves 11ac linear power. Input cap not required for 11n.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140324
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFPA5208
Pin Out
PA_EN
RFIN
1
10
GND
2
9
NC
VCC
3
8
GND
GND
4
7
GND
PDET
5
6
RFOUT
Package Outline (Dimensions in millimeters)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140324
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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RFPA5208
Pin Names and Descriptions
Pin
Name
Description
1
RFIN
RF input port is matched to 50Ω and DC blocked internally.
2
GND
Ground connection.
3
VCC
Voltage connected internally to the collectors of the RF device. To achieve specified performance, the layout
of the pin should match the Recommended Land Pattern
4
GND
Ground connection.
5
PDET
Power detector provides an output voltage proportional to the RF output power level.
6
RFOUT
7
GND
Ground connection.
8
GND
Ground connection.
9
NC
10
PA_EN
Pkg Base
GND
RF output is matched to 50Ω and DC blocked internally.
No connect. Please ensure this pin is floating, do not connect.
PA Enable pin, apply <0.4Vdc to turn PA off. Apply 1.75Vdc to 5Vdc to enable PA.
Ground connection. The backside of the package should be connected to the ground plane through a short
path, i.e., PCB vias under the device are recommended.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS140324
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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