PRELIMINARY RFHA1021U RFHA1021U 60W GaN Wide-Band Pulsed Power Amplifier The RFHA1021U is a 50V 60W high power amplifier designed for SBand pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1021U is an input matched power GaN transistor with 26dB small signal gain packaged in a ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Package: Flanged Ceramic, 8 pin Features ■ Wideband Operation: 3.1GHz to 3.5GHz ■ Advanced GaN HEMT Technology ■ Input Optimized Evaluation Board Layout for 50Ω Operation ■ Integrated Matching Components for High Terminal Impedances at Input ■ 50V Operation Typical Performance Output Pulsed Power 60W Pulse Width 100µs, Duty Cycle 10% Small Signal Gain 26dB High Efficiency 49% -40°C to 85°C Operation Applications Functional Block Diagram ■ Radar ■ Air Traffic Control and Surveillance ■ General Purpose Broadband Amplifiers Ordering Information RFHA1021US2 Sample bag with 2 pieces RFHA1021USB Bag with 5 pieces RFHA1021USQ Bag with 25 pieces RFHA1021USR 7” Short reel with 50 pieces RFHA1021UTR13 13” Reel with 250 pieces RFHA1021UPCBA-410 Fully Assembled Evaluation Board Optimized for 3.1-3.5GHz; 50V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS130924 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 12 RFHA1021U PRELIMINARY Absolute Maximum Ratings Parameter Drain Voltage Output Stage (VD2) Drain Voltage Input Stage (VD1) Gate Voltage (VG) Operating Voltage Ruggedness (VSWR) Rating Unit 150 V 54 V -6 to 2 V 50 V Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC) -40 to +85 °C 250 °C Operating Junction Temperature (TJ) Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Human Body Model Class 1A MTTF (TJ < 200°C, 95% Confidence Limits)* 3E + 06 Hours TC =85°C, DC Bias Only 2.6** °C/W TC =85°C, 100μs Pulse, 10% Duty Cycle 0.5** Thermal Resistance, RTH (Junction to Case) Output Stage * MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: P DISS < (TJ – TC) / RTH J-C and TC = TCASE ** RTH data estimates from RF3932 (equivalent output die size) Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) 50 -5 Drain Bias Current Frequency of Operation -3 V -2 264 3100 V mA 3500 Stage 1 = 44mA, Stage 2 = 220mA MHz DC Functional Test VGSQ Stage 1 -3.1 V VD = 50V, ID Stage 1 = 42mA VGSQ Stage 2 -3.3 V VD = 50V, ID Stage 2 = 220mA VDS(ON) – Stage 2 0.45 V VG = 0V, ID = 1.0A, Wafer level test RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 12 RFHA1021U PRELIMINARY Specification Parameter Unit Min Typ Max -13.5 -6.2 Condition RF Functional Test Input Return Loss Output Power Efficiency 47.5 48.45 dBm 40 42.0 % Input Return Loss Output Power Efficiency dB -13.5 -6.2 f = 3.1GHz, PIN = 25dBm [1,2] dB 47.5 48.45 dBm f = 3.5GHz, PIN = 28dBm [1,2] 40 42.0 % 26 dB f = 3.3GHz, PIN = 0dBm [1,2] dB/°C At peak output power [1,2] RF Typical Performance Small Signal Gain Gain Variation with Temperature TBD 48.45 dBm 70 W 50 % 24.5 dB Efficiency 43 % Input Return Loss -7.2 Power Gain 23.1 dB 49 % Output Power (PSAT) Drain Efficiency Power Gain Efficiency Input Return Loss f = 3.5GHz [1,2] -10.7 -6.2 -6.2 At peak output power (P3dB, 3500MHz) [1,2] f = 3.1GHz, POUT = 60W [1,2] dB f = 3.5GHz, POUT = 60W [1,2] dB [1] Test Conditions: PW = 100µs, DC = 10%, VDSQ = 50V, IDQ = 264mA, T = 25ºC. [2] Performance in a standard tuned test fixture. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 12 RFHA1021U PRELIMINARY Typical Performance in Standard Fixed Tuned Test Fixture: (T = 25°C unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 12 RFHA1021U PRELIMINARY Typical Performance in Standard Fixed Tuned Test Fixture: (T = 25°C unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 12 RFHA1021U PRELIMINARY Package Drawing (Dimensions in millimeters [+/- 0.127]) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 12 RFHA1021U PRELIMINARY Package Drawing (Dimensions in millimeters [+/- 0.127]) (continued) Pin Names and Descriptions Pin Name Description 1 DRAIN 1 DC Drain Feed Input Stage 2 NC No Connect 3 NC No Connect 4 GATE 1 DC Gate Feed Input Stage 5 RF IN RF in input Stage 6 NC No Connect 7 GATE 2 DC Gate Feed Output Stage 8 DRAIN 2 VDQ2 RF Output 9 SOURCE Source – Ground Base RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 12 RFHA1021U PRELIMINARY Bias Instruction for RFHA1021U 3.1GHz to 3.5GHz Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG1 and VG2. 4. Apply 50V to VD1 and VD2. 5. Increase VG1 until drain current for VD1 reaches 44mA or desired bias point. 6. Increase VG2 until drain current for VD2 reaches 220mA or desired bias point. 7. Turn on the RF input. IMPORTANT NOTE: Depletion mode device - when biasing the device VG must be applied BEFORE VD. When removing bias VD must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail. Note: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 12 RFHA1021U PRELIMINARY Proposed Evaluation Board Schematic RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 12 RFHA1021U PRELIMINARY Proposed Evaluation Board Bill of Materials Component Value Manufacturer Part Number C2 CAP, 330µF, 20%, 100V, AL ELEC, RAD T/H Illinois Capacitor, Inc. 337CKE100M C1 CAP, 10µF, 20%, 100V, AL ELC, RAD Panasonic Industrial Devices Sales EEU-FC2A100 C3, C5 CAP, 4.7µF, 10%, 100V, X7R, 2220 Murata Electronics GRM55ER72A475KA01L C4, C16 CAP, 4.7µF, 10%, 50V, X7R, 1206 Murata Electronics GRM31CR71H475KA12L C7, C8 CAP, 0.1µF, 10%, 100V, X7R, 1206 AVX Corporation 12061C104K4T2A C6, C15 CAP, 1000pF, 5%, 50V, C0G, 0805 Kemet C0805C102J5GACTU C18 CAP, 0.6pF, +/-0.1pF, 250V, C0G, ATC-A American Technical Ceramics 800A0R6BT250XT C12 CAP, 0.8pF, +/-0.1pF, 250V, C0G, ATC-A American Technical Ceramics ATC800A0R8BT250X C14 CAP, 1.2pF, +/-0.1pF, 250V, C0G, ATC-A American Technical Ceramics 800A1R2BT250X C9, C10, C11, C13, C17 CAP, 22pF, +/-0.1pF, 250V, C0G, ATC-A American Technical Ceramics 800A220BT250X CAP, 82pF, 5%, 500V, C0G, ATC-B American Technical Ceramics ATC800B820JT500XT R1, R2 RES, 3.3Ω, 5%, 1/4W, 1206 Panasonic Industrial Devices Sales ERJ-8GEYJ3R3V P1, P6 CONN, BANANA JACK, GREEN Kamaya, Inc RMC1/10JPTP P3, P5 CONN, BANANA JACK, RED JOHNSON CO 108-0902-001 CONN, BANANA JACK, BLACK JOHNSON CO 108-0903-001 CONN, SMA, ST JACK REC, FLNG MT, T/H Emerson Network Power 142-0701-631 C19, C20 P2, P4, P7 J1, J2 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 12 RFHA1021U PRELIMINARY Evaluation Board Layout Simulated Evaluation Board Impedances Frequency Z Source (Ω) Z Load (Ω) 3100MHz 50 TBD 3300MHz 50 TBD 3500MHz 50 TBD Device impedances reported are the simulated evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 12 RFHA1021U PRELIMINARY Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts V GS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS130924 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 12 of 12