RFMD SBB-2000

SBB-2000
50MHz to
1000MHz,
Cascadable
Active Bias
InGaP HBT
MMIC Amplifier
SBB-2000
Preliminary
50MHZ TO 1000MHZ, CASCADABLE ACTIVE
BIAS InGaP HBT MMIC AMPLIFIER
Package: Bare Die
Product Description
Features
RFMD’s SBB-2000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Its efficient operation from a single 5V supply and its
compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applications. It is well-suited for high linearity 5V gain block applications and it is internally matched to
50Ω.
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die
can be delivered at the wafer level or picked to gel or waffle paks.
30.0
GaAs HBT
20.0
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Gain and Return Loss (dB)
Optimum Technology
Matching® Applied
Si CMOS
Gain and Return Loss versus Frequency
VS=5V, IS=90mA
OIP3=42.5dBm @ 250MHz
P1dB=21.5dBm @ 500MHz
Single Fixed 5V Supply
Compact Die Size
(0.59mmx0.70mm)
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
10.0
PA Driver Amp
RF Pre-driver and RF Receive
Path
Military Communications
Test and Instrumentation
GSG Probe Data with Bias Tees
ZS=ZL=50 Ohms, T=25°C
0.0
-10.0
-20.0
IRL
Gain
ORL
-30.0
-40.0
Si BJT
0.0
GaN HEMT
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Frequency (GHz)
RF MEMS
Parameter
Frequency of Operation
Small Signal Gain
Output Power at 1dB Compression
Output IP3
Min.
Specification
Typ.
50
Max.
1000
20.0
20.0
19.5
22.5
21.5
20.0
42.5
Unit
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
Condition
Freq=250MHz
Freq=500MHz
Freq=1000MHz
Freq=250MHz
Freq=500MHz
Freq=1000MHz
Freq=250MHz
39.5
dBm
Freq=500MHz
34.5
dBm
Freq=1000MHz
Input Return Loss
30.0
dB
Freq=500MHz
Output Return Loss
14.5
dB
Freq=500MHz
Current
90
mA
Noise Figure
3.0
dB
Freq=500MHz
Thermal Resistance
48.8
°C/W
Junction to lead (89 pkg)
Test Conditions: VD =5V, ID =90mA, T=25°C, OIP3 Tone Spacing=1MHz, POUT/tone=0dBm. GSG Probe Data with Bias Tees.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-106099 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 6
SBB-2000
Preliminary
Absolute Maximum Ratings
Parameter
Rating
Total Current (ID)
110
Unit
mA
Device Voltage (VD)
5.5
V
Power Dissipation
0.61
W
Operating Lead Temperature (TL)
-40 to +85
°C
RF Input Power
+12 (TBR)*
dBm
Storage Temperature Range
-55 to +150
°C
+150
°C
Operating Junction Temp (TJ)
ESD Rating - Human Body Model
(HBM)
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Class 1C
*TBR=To Be Reviewed
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD <(TJ -TL)/RTH, j-l
Typical Performance (GSG Probe Data with Bias Tees) VD =5V, ID =90mA, T=25°C, Z=50Ω
Parameter
Units
50MHz
Small Signal Gain
dB
20.4
Output 3rd Order Intercept Point (see
note 1)
dBm
Output Power at 1dB Compression
dBm
Input Return Loss
dB
Output Return Loss
Reverse Isolation
Noise Figure
100MHz 250MHz
20.3
500MHz
750MHz
20.0
20.0
19.9
1000MHz
19.5
42.5
39.5
37.4
34.5
22.5
21.5
20.7
20.0
17.3
27.4
38.4
30.0
24.8
22.5
dB
16.2
19.8
19.7
14.5
11.7
9.4
dB
22.2
21.6
21.9
22.2
21.9
21.8
dB
3.0
2.9
3.0
3.1
3.1
Note 1: 0dBm/tone, 1MHz spacing.
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-106099 Rev A
SBB-2000
Preliminary
Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =90mA
24.0
44.0
23.0
42.0
22.0
40.0
OIP3 (dBm)
P1dB (dBm)
P1dB versus Frequency
21.0
20.0
-20°C
25°C
85°C
19.0
OIP3 versus Frequency
(0dBm/Tone, 1MHz Spacing)
-20°C
25°C
85°C
38.0
36.0
34.0
18.0
32.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.1
0.2
0.3
Frequency (GHz)
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Frequency (GHz)
Current versus Voltage
Noise Figure versus Frequency
120.0
5.0
4.5
Noise Frequency (dB)
110.0
ID (mA)
100.0
90.0
80.0
-20°C
25°C
85°C
70.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
25°C
85°C
0.5
60.0
0.0
4.8
4.9
5.0
5.1
VD (V)
EDS-106099 Rev A
5.2
5.3
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 6
SBB-2000
Preliminary
Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =90mA
S11 versus Frequency
S21 versus Frequency
0.0
22.0
-5.0
21.0
20.0
-15.0
S21 (dB)
S11 (dB)
-10.0
-20.0
-25.0
19.0
18.0
-30.0
-20°C
25°C
85°C
-35.0
-20°C
25°C
85°C
17.0
-40.0
16.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.1
0.2
0.3
Frequency (GHz)
0.5
0.6
0.7
0.8
0.9
1.0
S22 versus Frequency
0.0
0.0
-5.0
-5.0
-10.0
-10.0
S22 (dB)
S12 (dB)
S12 versus Frequency
-15.0
-20.0
-15.0
-20.0
-20°C
25°C
85°C
-25.0
-30.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Frequency (GHz)
4 of 6
0.4
Frequency (GHz)
0.7
0.8
0.9
-20°C
25°C
85°C
-25.0
-30.0
1.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-106099 Rev A
Preliminary
SBB-2000
Die Dimensions
Bond Pad Description
Bond Pad
RF IN
RF OUT
DIE
BACKSIDE
Function/Description
This pad is DC coupled and matched to 50Ω. An external DC block is required.
This pad is DC coupled and matched to 50Ω. DC bias is applied through this pad.
Die backside must be connected to RF/DC ground using silver filled conductive epoxy.
Notes:
1. All dimensions in inches [millimeters].
2. Die Thickness is 0.004 [0.100].
3. Typical bond pad is 0.004 (0.100) square.
4. Backside metallization: Gold.
5. Bond pad metallization: Gold.
6. Backside is ground.
Device Assembly
EDS-106099 Rev A
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
SBB-2000
Preliminary
Ordering Information
Part Number
Description
SBB-2000
Bare Die
6 of 6
Devices/Container
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
EDS-106099 Rev A