SBB-2000 50MHz to 1000MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier SBB-2000 Preliminary 50MHZ TO 1000MHZ, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: Bare Die Product Description Features RFMD’s SBB-2000 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Its efficient operation from a single 5V supply and its compact size (0.59mmx0.70mm) make it ideal for high-density multi-chip module applications. It is well-suited for high linearity 5V gain block applications and it is internally matched to 50Ω. RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification. Die can be delivered at the wafer level or picked to gel or waffle paks. 30.0 GaAs HBT 20.0 GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Gain and Return Loss (dB) Optimum Technology Matching® Applied Si CMOS Gain and Return Loss versus Frequency VS=5V, IS=90mA OIP3=42.5dBm @ 250MHz P1dB=21.5dBm @ 500MHz Single Fixed 5V Supply Compact Die Size (0.59mmx0.70mm) Patented Thermal Design and Bias Circuit Low Thermal Resistance Applications 10.0 PA Driver Amp RF Pre-driver and RF Receive Path Military Communications Test and Instrumentation GSG Probe Data with Bias Tees ZS=ZL=50 Ohms, T=25°C 0.0 -10.0 -20.0 IRL Gain ORL -30.0 -40.0 Si BJT 0.0 GaN HEMT 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Frequency (GHz) RF MEMS Parameter Frequency of Operation Small Signal Gain Output Power at 1dB Compression Output IP3 Min. Specification Typ. 50 Max. 1000 20.0 20.0 19.5 22.5 21.5 20.0 42.5 Unit MHz dB dB dB dBm dBm dBm dBm Condition Freq=250MHz Freq=500MHz Freq=1000MHz Freq=250MHz Freq=500MHz Freq=1000MHz Freq=250MHz 39.5 dBm Freq=500MHz 34.5 dBm Freq=1000MHz Input Return Loss 30.0 dB Freq=500MHz Output Return Loss 14.5 dB Freq=500MHz Current 90 mA Noise Figure 3.0 dB Freq=500MHz Thermal Resistance 48.8 °C/W Junction to lead (89 pkg) Test Conditions: VD =5V, ID =90mA, T=25°C, OIP3 Tone Spacing=1MHz, POUT/tone=0dBm. GSG Probe Data with Bias Tees. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. EDS-106099 Rev A 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SBB-2000 Preliminary Absolute Maximum Ratings Parameter Rating Total Current (ID) 110 Unit mA Device Voltage (VD) 5.5 V Power Dissipation 0.61 W Operating Lead Temperature (TL) -40 to +85 °C RF Input Power +12 (TBR)* dBm Storage Temperature Range -55 to +150 °C +150 °C Operating Junction Temp (TJ) ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1C *TBR=To Be Reviewed Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l Typical Performance (GSG Probe Data with Bias Tees) VD =5V, ID =90mA, T=25°C, Z=50Ω Parameter Units 50MHz Small Signal Gain dB 20.4 Output 3rd Order Intercept Point (see note 1) dBm Output Power at 1dB Compression dBm Input Return Loss dB Output Return Loss Reverse Isolation Noise Figure 100MHz 250MHz 20.3 500MHz 750MHz 20.0 20.0 19.9 1000MHz 19.5 42.5 39.5 37.4 34.5 22.5 21.5 20.7 20.0 17.3 27.4 38.4 30.0 24.8 22.5 dB 16.2 19.8 19.7 14.5 11.7 9.4 dB 22.2 21.6 21.9 22.2 21.9 21.8 dB 3.0 2.9 3.0 3.1 3.1 Note 1: 0dBm/tone, 1MHz spacing. 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. EDS-106099 Rev A SBB-2000 Preliminary Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =90mA 24.0 44.0 23.0 42.0 22.0 40.0 OIP3 (dBm) P1dB (dBm) P1dB versus Frequency 21.0 20.0 -20°C 25°C 85°C 19.0 OIP3 versus Frequency (0dBm/Tone, 1MHz Spacing) -20°C 25°C 85°C 38.0 36.0 34.0 18.0 32.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 Frequency (GHz) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Frequency (GHz) Current versus Voltage Noise Figure versus Frequency 120.0 5.0 4.5 Noise Frequency (dB) 110.0 ID (mA) 100.0 90.0 80.0 -20°C 25°C 85°C 70.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 25°C 85°C 0.5 60.0 0.0 4.8 4.9 5.0 5.1 VD (V) EDS-106099 Rev A 5.2 5.3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SBB-2000 Preliminary Typical Performance (GSG Probe Data with Bias Tees) VD =5.0V, ID =90mA S11 versus Frequency S21 versus Frequency 0.0 22.0 -5.0 21.0 20.0 -15.0 S21 (dB) S11 (dB) -10.0 -20.0 -25.0 19.0 18.0 -30.0 -20°C 25°C 85°C -35.0 -20°C 25°C 85°C 17.0 -40.0 16.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 Frequency (GHz) 0.5 0.6 0.7 0.8 0.9 1.0 S22 versus Frequency 0.0 0.0 -5.0 -5.0 -10.0 -10.0 S22 (dB) S12 (dB) S12 versus Frequency -15.0 -20.0 -15.0 -20.0 -20°C 25°C 85°C -25.0 -30.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Frequency (GHz) 4 of 6 0.4 Frequency (GHz) 0.7 0.8 0.9 -20°C 25°C 85°C -25.0 -30.0 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. EDS-106099 Rev A Preliminary SBB-2000 Die Dimensions Bond Pad Description Bond Pad RF IN RF OUT DIE BACKSIDE Function/Description This pad is DC coupled and matched to 50Ω. An external DC block is required. This pad is DC coupled and matched to 50Ω. DC bias is applied through this pad. Die backside must be connected to RF/DC ground using silver filled conductive epoxy. Notes: 1. All dimensions in inches [millimeters]. 2. Die Thickness is 0.004 [0.100]. 3. Typical bond pad is 0.004 (0.100) square. 4. Backside metallization: Gold. 5. Bond pad metallization: Gold. 6. Backside is ground. Device Assembly EDS-106099 Rev A 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SBB-2000 Preliminary Ordering Information Part Number Description SBB-2000 Bare Die 6 of 6 Devices/Container 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. EDS-106099 Rev A