RF3223 RF3223Low Noise, Linear Amplifier High Linearity/Driver Amplifier LOW NOISE, LINEAR AMPLIFIER HIGH LINEARITY/DRIVER AMPLIFIER Package Style: QFN, 12-Pin, 3 x 3 Features 500 MHz to 2000 MHz +44.0 dBm Output IP3 +14.0 dB Gain at 850 MHz +11.4 dBm Input P1dB at 850 MHz 3.4 dB Noise Figure at 850 MHz Single 5 V Power Supply Applications Basestation Applications Cellular and PCS Systems CDMA, W-CDMA Systems GSM/EDGE Systems Final PA for Low-Power Applications Functional Block Diagram Product Description The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 500 MHz to 3 GHz frequency range. The RF3223 operates from a single 5 V power supply, and is assembled in an economical 3 mm x 3 mm QFN package. Ordering Information RF3223 RF3223SR RF3223TR7 RF3223PCBA-410 9GaAs HBT GaAs MESFET InGaP HBT Low Noise, Linear Amplifier High Linearity/Driver Amplifier 7” Reel with 100 pieces 7” Reel with 2500 pieces 500MHz to 2000MHz PCBA with 5-piece sample bag Optimum Technology Matching® Applied SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 061213 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 8 RF3223 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Device Voltage -0.5 to +6.0 V Device Current 200 mA Operating Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Note 1: Max operating voltage is 5 V. Note 2: Max operating current is 160 mA for backed-off applications. Higher current compressed applications require dissipated power <0.9 W. Parameter Min. Specification Typ. Max. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EU Directive 2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Unit Condition VCC = 5 V, RFIN = -10 dBm, Freq = 850 MHz, with Temp = 25°C unless otherwise noted. Overall AC Specifications Frequency MHz Gain (Small Signal) 12 Reverse Isolation 14.0 15.0 dB 21 F1 = 850 MHz, F2 = 851 MHz Output IP3 41 45 dBm Output P1dB 23 +24.5 dBm 3.4 dB ThetaJC 75 °C/W Maximum Measured Junction Temperature at DC Bias Conditions 145 °C TCASE = +85°C. ICC = 160 mA VCC = 5 .0V Mean Time To Failures >100 years TCASE = +85 °C Noise Figure Thermal DC Specifications Device Voltage Operating Current Range 5.0 110 150 V 160 mA VCC = 5 V Note: The RF3223 must be operated at or below 160 mA in order to achieve the thermal performance listed above. 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 061213 RF3223 Pin 1 2 Function GND RF IN 3 4 5 6 7 8 GND GND GND GND GND RF OUT 9 10 11 GND GND BIAS 12 Pkg Base GND GND Description Interface Schematic Ground connection. RF input pin. This pin is not internally DC-blocked. A DC blocking capacitor suitable for the frequency of operation should be used. Ground connection. Ground connection. Ground connection. Ground connection. Ground connection. Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 : with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. See pin 2. Ground connection. This pin is used to control the bias current. An external resistor may be used to set the bias current for any VPD voltage. Allows for trade-offs between IP3 versus noise figure and TMAX. Ground connection. Ground connection. Vias to ground required under the package base. Package Drawing 061213 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 8 RF3223 Application Schematic - 850 MHz 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 061213 RF3223 Evaluation Board Schematic 061213 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 8 RF3223 Evaluation Board Layout Board Size 1.5” x 1.5” Board Thickness 0.032”, Board Material FR-4 6 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 061213 RF3223 061213 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 8 RF3223 8 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 061213