SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs MESFET 22.5 InGaP HBT SiGe HBT GaAs pHEMT *DLQG% SiGe BiCMOS Si BiCMOS S22 17.5 -15 15 -20 12.5 -25 10 -30 Si BJT 7.5 -35 5 InP HBT 0 100 200 300 400 500 600 700 -10 Si CMOS GaN HEMT S11 20 -5 S21 800 ,5/25/G% 0 25 IP3 =41dBm at 240MHz Stable Gain Over Temperature Robust 1000V ESD, Class 1C Operates From Single Supply Low Thermal Resistance Applications *DLQ5HWXUQ/RVVYHUVXV)UHTXHQF\& GaAs HBT Receiver IF Applications Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Terminals -40 900 )UHTXHQF\0+] RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit Condition Small Signal Gain 20.5 dB 70MHz 20.0 21.5 dB 240MHz 19.5 21.0 dB 500MHz Output Power at 1dB Compression 21 dBm 70MHz 21 dBm 240MHz 19.2 20.7 dBm 400MHz Output Third Order Intercept Point 39.0 dBm 70MHz 41.0 dBm 240MHz 37.5 39.5 dBm 400MHz Input Return Loss 14 18 dB 500MHz Output Return Loss 12.0 16.0 dB 500MHz Noise Figure 2.8 3.8 dB 500MHz Device Operating Voltage 4.5 4.9 5.3 V Device Operating Current 82 90 98 mA Thermal Resistance 43 °C/W junction to lead Test Conditions: VS =8V, ID =90mA Typ., TL =25°C. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =33. Data with Application Circuit. 18.5 18.0 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 8 SBF5089Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ID) 150 mA Device Voltage (VD) 6 V RF Input Power +19 dBm Max Operating Dissipated Power 0.8 W +150 °C -40 to +85 °C +150 °C Junction Temp (TJ) Operating Temp Range (TL) Storage Temp ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1C Moisture Sensitivity Level MSL 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical RF Performance at Key Operating Frequencies Parameter Unit 70MHz 100MHz 240MHz 400MHz 500MHz 850MHz 18.2 Small Signal Gain dB 20.5 20.4 20.1 19.8 19.5 Output Third Order Intercept Point dBm 39 39 41 39.5 39 34 Output Power at 1dB Compression dBm 21.0 21.0 21.0 20.7 20.8 18.6 26.8 Input Return Loss dB 19.4 19.9 20.1 20.9 22.0 Output Return Loss dB 17.2 15.8 18.6 24.0 37.5 15.5 Reverse Isolation dB 25.2 22.4 22.3 22.3 22.3 22.4 Noise Figure dB 2.7 2.8 2.7 2.8 2.8 2.8 Test Conditions: VS =8V, ID =90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm. TL =25°C, RBIAS =33, ZS =ZL =50, App circuit. 2 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SBF5089Z TOIP versus Temp 43 21 41 20.5 39 20 37 TOIP (dB) Output Power (dBm) P1dB versus Temp 21.5 19.5 19 +25°C 18.5 -40°C 18 -85°C 150 33 31 +25°C 29 -40°C +85°C 27 17.5 50 35 250 350 450 550 Frequency(MHz) 650 750 25 850 50 150 250 350 450 550 650 750 850 Frequency(MHz) Noise Figure versus Temp 5 4.5 4 NF (dB) 3.5 3 2.5 2 1.5 +25°C 1 -40°C 0.5 +85°C 0 50 150 250 350 450 550 650 750 850 Frequency(MHz) DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 8 SBF5089Z Test Conditions: VS =8V, RBIAS =33, ID =90mA, T=+25°C, S11 versus. Frequency S21 versus Frequency -10 22 -12 21.5 +25& -14 -40& 21 +25& +85& -40& -16 20.5 +85& S21 (dB B) S11 G% ) -18 -20 -22 -24 20 19.5 19 18.5 -26 18 -28 17.5 -30 17 50 150 250 350 450 550 650 750 850 50 150 250 350 Frequency (MHz) 450 550 650 S12 versus Frequency 850 S22 versus Frequency -20 -10 -20.5 +25& +25c -12 +25& -40& -40c -40& -21 +85c +85& -14 +85& -21.5 -16 -22 -18 S22 (dB B) S12 (dB) 750 Frequency (MHz) -22.5 -23 -20 -22 -23.5 -24 -24 -26 -24.5 -28 -30 -25 50 150 250 350 450 550 650 750 50 850 150 250 350 Frequency (MHz) 450 550 650 750 850 Frequency (MHz) Bias Sweep versus Temperature 100 +25°C -40°C +85°C Current (mA) 80 60 40 20 0 0 2 4 6 8 Source voltage Note: Output Return Loss can be improved at low end of band with L1 selection. 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SBF5089Z Application Circuit Schematic R1(Rbias) VS 1000 pF 1 uF R F in 1 C4 L1 4 SBF5089Z 3 2 C5 R F out L2 C6 Application Circuit Element Values Reference Designator 70MHz 100MHz 240MHz 500MHz 850MHz C5 & C6 1uF 1000pF 1000pF 220pF 100pF C4 1uF 100pF 100pF 100pF 68pF L1 6.8uH 1.2uH 1.2uH 68nH 33nH L2 6.8nH 12nH 12nH 6.8nH 6.8nH Recommended Bias Resistance for ID =90mA Supply Voltage (VS) (Volts) 7.5 8 10 12 Bias Resistance () 27 33 55 77 Note=RBIAS provides DC bias stability over temperature. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 8 SBF5089Z Evaluation Board Layout Mounting Instructions 1. Note: For broadband RF unconditional stability do not put GND vias under the exposed backside GND paddle. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. USe a large ground pad area with many plated through-holes as shown. 4. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. Pin 1 Function RF IN 2, 4 GND 3 RF OUT/BIAS 6 of 8 Description RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF output and bias pin. DC voltage is present on this pin therefore a DC-blocking capacitor is necessary for proper operation. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011 SBF5089Z Suggested Pad Layout 0.3255 [8.27] 0.0750 [1.91] (2X) 0.0640 [1.63] (2X) 0.0540 [1.37] (2X) 0.0250 [0.64] (2X) NOTE: For broadband RF unconditional stability do not put vias under exposed gnd 0.0775 [1.97] 0.2560 [6.50] 0.0750 [1.91] 0.0899 [2.28] 0.0449 [1.14] INP UT/OUTPU T TR ACE C ENTER LIN E 0.0600 [1.52] 0.0450 [1.14] 0.0506 [1.29] 0.0800 [2.03] 0.0420 [1.07] 0.0270 [0.69] Ø0.0200 [Ø0.51] GND Via 9X 0.0540 [1.37] D EVICE CE NTER LINE Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS111011 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 8 SBF5089Z Part Identification Ordering Information 8 of 8 Ordering Code Description SBF5089Z 7” Reel with 1000 pieces SBF5089ZSQ Sample Bag with 25 pieces SBF5089ZSR 7” Reel with 100 pieces SBF5089ZPCK1 100MHz to 240MHz, 8V Operation PCBA with 5-piece Sample Bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111011