OP775A

Prod uct Bul le tin OP775A
Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP775A, OP775B, OP775C, OP775D
Features
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
•
•
•
•
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° C to +100° C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260° C(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Supresses high frequency noise
Variety of sensitivity ranges
Wide receiving angle
Side looking package for space limited
applications
Description
The OP775 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a blue tinted epoxy package.
The internal collector-emitter capacitor
allows the device to be used in
applications where external high
frequency emissions could compromise
signal integrity.
NOTES:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in µA, use the formula ICED = 10(0.040T A-3.4) where
TA is ambient temperature in ° C.
Typi cal Per form ance Curves
Typical Spectral Response
Schematic
The device’s wide receiving angle
provides relatively even reception over a
large area.
The OP775 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
The side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Wavelength - nm
Car roll ton, Texas 75006
3-48
(972) 323- 2200
Fax (972) 323- 2396
Types OP775A, OP775B, OP775C, OP775D
o
Elec tri cal Char ac ter is tics (TA = 25 C un less oth er wise noted)
SYM BOL
PARAMETER
MIN
On-State Collector Current
OP775D
OP775C
OP775B
OP775A
IC(ON)
∆IC /∆T
I CEO
0.70
0.70
1.20
1.80
5.50
2.25
3.40
5.50
Relative IC Changes with Temperature
100
Collector Dark Current
Emitter-Collector Breakdown Voltage
VCE(SAT)
Collector-Emitter Saturation Voltage
VCE = 5.0 V, Ee = 1.0 mW/cm2(3)
VCE = 5.0 V, Ee = 1.0 mW/cm2,
λ = 935 nm
%/ ° C
nA
5.0
0.40
Capacitance
TEST CON DI TIONS
mA
100
V(BR)ECO
CCE
TYP MAX UNITS
1000
VCE = 10.0 V, Ee = 0
V
IE = 100 µA
V
IC = 100 µA, Ee = 1.0 mW/cm2(3)
pF
VR = 0 V
Typi cal Per form ance Curves
Normalized Output
vs. Frequency
1.00
.75
OP775
Typical Rise and Fall Time
vs. Load Resistance
V RL = 1 V
V CE = 5 V
50% Duty Cycle
LED: λ = 935 nm
RL =
0.50
OP555
0.25
160
LED = GaAIAs, λ = 890 nm
140 V RL is voltage across R L
120
V CC = 5 V
100 V
RL = 1 V
80 f = 100 Hz
6 0 PW = 1 mS
OP775
OP555
40
20
R L = 10 K Ω
0
0.00
1
10
100
Frequency - KHz
1000
0
2
4
6
8
10
R L - Load Resistance - KΩ
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972)323- 2200
Fax (972)323- 2396