Preliminary Datasheet RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector 3. Emitter 4. Colloector (Flange) G 1 2 3 E Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 ±30 90 50 180 100 328.9 0.38 2.0 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 1 of 6 RJH60F7ADPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time C-E diode forward voltage C-E diode reverse recovery time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 trr Min 4 Typ 1.35 1.6 4700 198 83 48 30 110 95 1.6 140 Max 100 ±1 8 1.75 2.1 Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note3 IC = 90 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5 IF = 20 A Note3 IF = 20 A diF/dt = 100 A/s Notes: 3. Pulse test REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Page 2 of 6 RJH60F7ADPK Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 1000 Collector Current IC (A) 10 μs s 10 1 0.1 1 9.2 V 9.8 V 9V 10 V 120 15 V 8.8 V 80 8.6 V 8.4 V 8.2 V VGE = 8 V 40 0 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Pulse VCE = Test 10 V Ta = 25Test °C Pulse 120 80 Tc = 75°C 40 25°C –25°C 0 0 2 4 6 8 7 Pulse Test Ta = 25°C 6 5 IC = 20 A 50 A 90 A 4 3 2 1 0 6 10 8 2.0 1.8 IC = 90 A 1.6 50 A 1.4 20 A 1.2 1.0 0.8 0.6 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 9.6 V Tc = 25°C Single pulse 160 Collector Current IC (A) = 0μ 10 Collector Current IC (A) PW 100 9.4 V Pulse Test Ta = 25°C 160 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 8 7 IC = 10 mA 6 5 1 mA 4 3 2 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 6 RJH60F7ADPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage Forward Current vs. Forward Voltage (Typical) 10000 Cies VGE = 0 V Pulse Test Ta = 25°C 80 Capacitance C (pF) Forward Current IF (A) 100 60 40 20 0 100 Coes 1 2 3 4 0 5 50 100 150 200 250 300 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Switching Characteristics (Typical) (1) 16 IC = 50 A Ta = 25°C VCE 600 VGE 12 VCC = 600 V 300 V 400 8 200 4 VCC = 600 V 300 V 0 0 40 80 120 160 0 200 1000 Switching Time t (ns) 800 Gate to Emitter Voltage VGE (V) C-E Diode Forward Voltage VCEF (V) td(off) 100 tf td(on) tr 10 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C, Resistive load 1 1 10 Gate Charge Qg (nc) 10000 Switching Characteristics (Typical) (3) Switching Time t (ns) 1000 td(off) tf 1000 1000 IC = 50 A, RL = 6 Ω VGE = 15 V, Ta = 25°C 100 100 Collector Current IC (A) Switching Characteristics (Typical) (2) Switching Time t (ns) Cres VGE = 0 V f = 1 MHz Ta = 25°C 10 0 Collector to Emitter Voltage VCE (V) 1000 IC = 50 A, VGE = 15 V RL = 6 Ω, Rg = 5 Ω td(off) 100 tf td(on) tr td(on) tr 10 10 1 10 Gate Resistance Rg (Ω) REJ03G1837-0200 Rev.2.00 Jun 11, 2010 100 0 20 40 60 80 100 120 140 Case Temperature Tc (°C) Page 4 of 6 RJH60F7ADPK Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 0.38°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 0.0 2 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ 100 μ PW T 1m 10 m Pulse Width 100 m 10 1 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 0.0 2 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ 100 μ PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. Vin = 15 V VCC Ic 10% 10% td(on) tr ton REJ03G1837-0200 Rev.2.00 Jun 11, 2010 90% td(off) tf toff Page 5 of 6 RJH60F7ADPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Ordering Information Part No. RJH60F7ADPK-00-T0 REJ03G1837-0200 Rev.2.00 Jun 11, 2010 Quantity 360 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0