200V Schottkys Brochure - Solid State Devices, Inc.

Solid State Devices, Inc.
ISO 9001:2008 & AS9100:2009 Rev. C
www.ssdi-power.com | (562) 404-4474
Solid State Devices, Inc.
Company Overview
Heritage  Founded in 1967 and privately held, SSDI has been committed to the high reli-
ability aerospace market for over 45 years. Each member of the technical management team
averages over 20 years of industry experience.
Leader in High Reliability Semiconductors  Power and high voltage discretes and
assemblies. SSDI is an ISO 9001:2008 and AS9100:2009 Rev. C facility.
Solution Focused  SSDI is dedicated to provide unique solutions for obsolescence, reliability, performance, and other custom high reliability applications.
Custom Discretes, Modules & Assemblies  SSDI leverages a unique offering of
discrete components with over 45 years of power and high
Sales by Sector
voltage module experience, providing value added, integrated
solutions.
Deliver Value  Quality, reliability, delivery, performance,
service.
54%
Defense
41%
Space
Growth and Strength  Strong steady growth, capable of
doubling current manufacturing and support capacity.

5% Hi Rel
Industrial
Testing / Qualification Capabilities
MIL-PRF-19500 / MIL-STD-883 / MIL-STD-750 / MIL-STD-202 / ESA / SCC-5000 / MIL-M-38510
Components
▪▪ Hermeticity
▪▪ PIND Testing
▪▪ Reverse Energy
Transient Test
▪▪ Current Surge Test
▪▪ HTRB
▪▪ Real Time X-Ray
▪▪ Parametric Testing
▪▪ Power Burn-In
▪▪ Power Cycling
▪▪ Thermal Response
▪▪ ESD
Modules
Environmental
▪▪ Corona AC & DC
▪▪ HIPOT AC & DC
▪▪ Performance Test
▪▪ Static & Dynamic
▪▪ Power Cycling
▪▪ Burn-In
▪▪ Real Time X-Ray
▪▪ Insulation Resistance
▪▪ Temperature Cycling
▪▪ Thermal Shock
▪▪ Humidity
▪▪ High Temp Storage
▪▪ Salt Spray / Atmosphere
▪▪ Moisture Resistance
▪▪ Hot / Cold Temp Bath
▪▪ Barometric Pressure

SSDI Advantages
▪▪ Flexible supplier
▪▪ Standard or custom solutions
▪▪ Small quantities welcomed
▪▪ Samples available
▪▪ Broad hermetic packaging capacity
▪▪ Partner on the design, manufacturing, and testing
▪▪ Product availability for the life of the program
▪▪ Solutions for obsolescence and DMS
▪▪ On time delivery of high reliability products
Outside
Processing
▪▪ Hermeticity
▪▪ Vibration
▪▪ Shock
▪▪ Acceleration
▪▪ RGA
▪▪ Radiography
▪▪ Radiation Testing
▪▪ SEM / WLAT
▪▪ RF Testing
Product Centers
Hermetic
COTS
Microelectronics
Power and
HV Modules
SSDI Rectifiers,
Schottkys,
Zeners & TVS
(Hermetic Cavity Devices)
State of the Art Products
▪▪ ASPDs (Application Specific
Power Devices)
▪▪ Axial Leaded & Surface Mount
Rectifiers
▪▪ Battery Bypass Modules
▪▪ Bipolar Products
▪▪ Centertaps & Bridges
▪▪ Custom Products (per
customer requirements)
▪▪ DC-DC Converters
▪▪ High Voltage Rectifiers &
Assemblies
▪▪ IGBTs
▪▪ MOSFETs / JFETs
▪▪ Power Hybrids
▪▪ Power Modules
▪▪ Rectifiers
▪▪ Schottkys and
Schottky Assemblies
▪▪ Silicon Carbide Schottky
Rectifiers (SiC)
▪▪ Small Signal Transistors
▪▪ Thyristors / SCRs
▪▪ TVS and Zener Assemblies
▪▪ Voltage Regulators
▪▪ Zeners
Obsolete & DMS Support
▪▪ Bipolar Transistors
▪▪ Darlingtons
▪▪ Linear Voltage Regulators
▪▪ PUTs
▪▪ Rectifiers
▪▪ Reverse Engineering
▪▪ RF Products
▪▪ SCRs
▪▪ TVS
▪▪ UJTs
▪▪ Zeners
Notes: Minimum order may apply. Most
products available in die form.
For additional information and data sheets:
14701 Firestone Blvd. La Mirada, CA 90638 | (562) 404-4474 | FAX (562) 404-1773 | [email protected] | www.ssdi-power.com
2
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
▪▪ Product Family Overview and Features................................................................................4
▪▪ SPD1502 thru SPD2002.........................................................................................................5
▪▪ SSR04150S.22 / -4 thru SSR04200S.22 / -4..........................................................................6
▪▪ SSR04150CTS.22 thru SSR04200CTS.22..............................................................................7
▪▪ SSR08150S.22 thru SSR08200S.22.......................................................................................8
▪▪ SSR08150CTS.22 thru SSR08200CTS.22..............................................................................9
▪▪ SSR08150CT-6 thru SSR08200CT-6.....................................................................................10
▪▪ SED10HB / HE / HF200.........................................................................................................11
▪▪ SSR10150G / S.5 thru SSR10200G / S.5..............................................................................12
▪▪ SSR10150J thru SSR10200J...............................................................................................13
▪▪ SSR20150CTG / S.5 thru SSR20200CTG / S.5.....................................................................14
▪▪ SED40KB / KE / KF200 and SSR40G200..............................................................................15
▪▪ SSR40150J and SSR40200J................................................................................................16
▪▪ SSR80150CTM / Z thru SSR80200CTM / Z..........................................................................17
▪▪ SED100LB / LE / LT150 thru SED100LB / LE / LT200...........................................................18
▪▪ High Reliability Screening...................................................................................................19
▪▪ Sales Reps / Directions to SSDI............................................................................back cover
NOTE: TX, TXV, and S-level screening available for all devices. Screening based on MIL-PRF-19500. Screening flows available on request.
The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for errors or omissions.
Solid State Devices, Inc. reserves the right to make changes without further notice
to any product herein. Solid State Devices, Inc. does not assume liability arising out
of the application or use of any product or circuit described herein; neither does it
convey any license under its patent rights nor the rights of others.
™
Solid State Devices, Inc. and
are registered trademarks of Solid State
Devices, Inc. Solid State Devices, Inc. is an Equal Opportunity/Affirmative Action
Employer.
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact SSDI.
SSDI components may be used in life-support devices or systems only with the
express written approval of SSDI. Failure of such components can be reasonably
expected to cause the failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support devices or systems are
intentionally implanted in a human body, or used to support and/or maintain and/or
protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
200 Volt Hermetic Silicon Schottky Rectifiers Version 1.10 (06/24/2015) - Entire contents copyright © 2015 Solid State Devices, Inc. All Rights Reserved.
No part of this catalog may be reproduced, transmitted, rewritten, scanned, stored mechanically or electronically, translated into other languages, or adapted for
any use without the express written permission of Solid State Devices, Inc.
200 Volt Hermetic Silicon Schottky Rectifiers
3
Product Family Overview & Features
200 Volt Hermetic Silicon Schottky Rectifiers Product Family
Hermetic Packaging Options
TO-254Z
Sedpack 2
TO-254
Sedpack 1
SMD.5
LCC6
TO-257
SMD.22
LCC4
Cerpack
Sedpack 3
SM
SMS
Axial Lead
Solid State Devices, Inc. (SSDI) is
excited to announce its new additions
to the 200 volt silicon Schottky rectifier product family initially introduced in
November 2011. This product line
delivers the highest voltage ratings in
the industry for hermetically sealed
silicon Schottky devices. With the
latest Schottky products, this family
now features a current range of 2 amps
to 100 amps. Higher current versions are
currently in development and expected
to be released in 2013.
The key advantages of this high voltage
product family include an extremely
low forward voltage drop, low reverse
leakage, high peak surge current, low
thermal resistance, and the availability of single die or dual centertap
configurations.
In addition to their electrical advantages,
many of these new Schottky rectifiers
are available in hermetic surface mount
packages with extremely small footprints and low profiles. For example, the
maximum dimensions for the SMD.22
are 0.157” (W) x 0.227” (L) x 0.075”
(H). These devices are also available
to be screened at TX, TXV, or S level.
Screening is based on MIL-PRF-19500
and screening flows are available on
request. For more information or to
request samples, contact SSDI at (562)
404-4474 or visit www.ssdi-power.
com.
4
Features
▪▪ High voltage ratings: up to 200 volts
▪▪ Output current range: 2 amps to 100 amps
▪▪ Low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Guard ring for overvoltage protection
▪▪ Hermetically sealed packages - surface
mount packaging options available
▪▪ Single die and dual centertap
configurations available
▪▪ TX, TXV, and S level screening available
Single Die Configurations
Maximum Ratings and Electrical Characteristics
(V)
VR
(A)
IO
IFSM
(A)
(V)
VF
Package
SPD2002 Series
150 - 200
2
40
0.95 @ 2A
Axial lead / SMS / SM
SSR04200S.22 Series
150 - 200
4
50
1.00 @ 4A
SMD.22
SSR04200-4 Series
150 - 200
4
50
1.00 @ 4A
LCC4
SSR08150S.22 Series
150 - 200
8
80
0.95 @ 8A
SMD.22
Part Number
SED10HB200 Series
200
10
100
0.78 @ 10A
Sedpack 1
SSR10200G / S.5 Series
150 - 200
10
100
0.84 @ 10A
Cerpack / SMD.5
SSR10200J Series
150 - 200
10
100
0.90 @ 10A
TO-257
SED40KB200 & SSR40G200 Series
150 - 200
40
500
0.95 @ 40A
Sedpack 2 / Cerpack
SSR40200J Series
150 - 200
40
250
1.20 @ 40A
TO-257
SED100LB200 Series
150 - 200
100
1000
0.93 @ 100A
Sedpack 3
Dual Centertap Configurations
Maximum Ratings and Electrical Characteristics (*per leg)
(V)
(A)
IO*
IFSM*
VF*
Package
SSR04200CTS.22 Series
150 - 200
2
20
0.95 @ 2A
SMD.22
SSR08200CTS.22 Series
150 - 200
4
40
0.95 @ 4A
SMD.22
SSR08200CT-6 Series
150 - 200
4
50
1.00 @ 4A
LCC6
SSR20200CTG Series
150 - 200
10
100
1.00 @ 10A
Cerpack
SSR20200CTS.5 Series
150 - 200
10
100
1.00 @ 10A
SMD.5
SSR80200CTM / Z Series
150 - 200
40
250
1.05 @ 40A
TO-254 / TO-254Z
Part Number
200 Volt Hermetic Silicon Schottky Rectifiers
VR
(A)
(V)
Jump to Table of Contents
SPD1502 thru SPD2002 Series
150 - 200 Volts, 2 Amps
Schottky Rectifiers
▪▪ Extremely low forward voltage drop:
0.95V max @ 2A, 25°C
▪▪ Low reverse leakage current
▪▪ High surge capacity
▪▪ Hermetically sealed package
▪▪ Possible replacement for 1N5802 - 1N5806 Series
▪▪ Category III metallurgical bond per MIL-PRF-19500 appendix A
▪▪ TX, TXV, and S level screening available - consult factory
Axial
Lead
Surface
Mount
Round Tab
(SM)
MAXIMUM RATINGS1/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
2
Amps
IFSM
40
Amps
TOP & TSTG
-55 to +150
°C
RθJL
RθJE
70
50
°C/W
SPD1502
SPD2002
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TL or TE = 55°C
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C
Operating & Storage Temperature
Junction to Lead, L = .25” (Axial Lead)
Junction to End Tab (Surface Mount)
Thermal Resistance
ELECTRICAL CHARACTERISTICS
Surface
Mount
Square Tab
(SMS)
SYMBOL
MIN
MAX
UNIT
Instantaneous Forward Voltage Drop
TJ=25°C, 300 - 500 µsec pulse
IF=0.5A
IF=1A
IF=2A
VF1
VF2
VF3
-
0.78
0.85
0.95
Volts
Instantaneous Forward Voltage Drop
TJ=-55°C, 300 - 500 µsec pulse
IF=1A
VF4
-
1.10
Volts
Instantaneous Forward Voltage Drop
TJ=100°C, 300 - 500 µsec pulse
IF=1A
VF5
-
0.78
Volts
IR1
-
100
µA
IR2
-
2
mA
CJ
-
40
pF
Reverse Leakage Current
VR =Rated VR, TA=25°C, 300 µsec pulse minimum
Reverse Leakage Current
VR =Rated VR, TA=100°C, 300 µsec pulse minimum
B
Junction Capacitance
VR =10 VDC, TA=25°C, f=1 MHz
Axial
C
ØB
ØD
C
A
Surface Mount
Round Tab (SM)
C
ØA
D
B
DIM
MIN
MAX
A
.095”
.105”
B
.190”
.210”
C
.015”
.025”
D
.002”
--
A
DIM
MIN
MAX
A
.155”
.185”
B
.080”
.107”
C
1.00”
--
D
.028”
.032”
B
B
D
2x C
Surface Mount
Square Tab (SMS)
DIM
MIN
MAX
A
.200”
.235”
B
.125”
.135”
C
.020”
.030”
D
.002”
--
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
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200 Volt Hermetic Silicon Schottky Rectifiers
5
SSR04150S.22 / -4 thru SSR04200S.22 / -4
150 - 200 Volts, 4 Amps
Hermetic Surface Mount Schottky Rectifier
▪▪ Extremely small footprint
▪▪ Extremely low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
LCC4 (-4)
SMD.22 (S.22)
MAXIMUM RATINGS1/2/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
4
Amps
IFSM
50
Amps
TOP & TSTG
-65 to +175
°C
RθJC
8
(typ 6.5)
°C/W
SSR04150
SSR04200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS2/
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=0.1A
IF=0.5A
IF=1A
IF=2A
IF=4A
VF1
VF2
VF3
VF4
VF5
-
0.57
0.72
0.77
0.84
0.92
0.80
0.85
1.00
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=1A
IF=2A
IF=4A
VF6
VF7
VF8
-
0.92
1.11
1.45
-
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=0.1A
IF=0.5A
IF=1A
IF=2A
IF=4A
VF9
VF10
VF11
VF12
VF13
-
0.43
0.56
0.62
0.70
0.79
0.65
0.71
0.88
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.15
2
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
30
-
µA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
150
200
µA
Reverse Leakage Current
Rated VR, TA=150°C, 300 µsec pulse minimum
IR4
-
600
-
µA
CJ
-
21
16
25
pF
VR =5V
VR =10V
Junction Capacitance
TA=25°C, f=1 MHz
Case Outline: SMD.22 (S.22)2/
Pin Out:
Pin 1: Cathode
Pin 2: Anode
3
Pin 3: Anode
Case Outline: LCC4 (-4)2/
Pin Out:
Pin 1: Cathode
Single die
Pin
2: Anode
LCC4
Pin 3: Anode
.065±.010
1
.134 .030
.052
.220±.007
.140
.150
±.007
.225
.215
.160
.145
.076
.060
.048
.032
3
4
2
1
.050 REF
4x .025
REF
2
PIN 1
INDENTIFIER
.070
.090
.048
.032
.088
.072
.005 TYP
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
2/ SMD.22: For optimal performance, connect anode terminals together.
LCC4: For optimal performance, connect anode terminals together and cathode terminals together.
6
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
SSR04150CTS.22 thru SSR04200CTS.22
150 - 200 Volts, 4 Amps
Hermetic Surface Mount Centertap Schottky Rectifier
SMD.22
(S.22)
▪▪ Extremely small footprint
▪▪ Extremely low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
MAXIMUM RATINGS1/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
2
Amps
IFSM
20
Amps
TOP & TSTG
-65 to +175
°C
RθJC
16
(typ 12)
°C/W
SSR04150
SSR04200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C, per leg
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C, per leg
Operating & Storage Temperature
Thermal Resistance
Junction to case, per leg
ELECTRICAL CHARACTERISTICS (PER LEG)
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=0.1A
IF=0.5A
IF=1A
IF=1.5A
IF=2A
VF1
VF2
VF3
VF4
VF5
-
0.650
0.770
0.825
0.865
0.900
0.820
0.870
0.950
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=1A
IF=2A
VF6
VF7
-
1.030
1.340
-
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=0.1A
IF=0.5A
IF=1A
IF=1.5A
IF=2A
VF8
VF9
VF10
VF11
VF12
-
0.490
0.615
0.685
0.730
0.770
0.690
0.760
0.850
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.075
1
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
12
-
µA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
55
200
µA
Reverse Leakage Current
Rated VR, TA=150°C, 300 µsec pulse minimum
IR4
-
250
-
µA
CJ
-
21
16
25
pF
Junction Capacitance
TA=25°C, f=1 MHz
VR =5V
VR =10V
Case Outline: SMD.22 (S.22)
Pin Out:
Pin 1: Cathode
Pin 2: Anode 1
Pin 3: Anode 2
Note: For optimal performance,
connect anode terminals together
.220±.007
.065±.010
3
1
.134 .030
.052
.140
.150
±.007
2
.070
.090
.005 TYP
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
7
SSR08150S.22 thru SSR08200S.22
150 - 200 Volts, 8 Amps
Hermetic Surface Mount Schottky Rectifier
SMD.22
(S.22)
▪▪ Extremely small footprint
▪▪ Extremely low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
MAXIMUM RATINGS1/2/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
8
Amps
IFSM
80
Amps
TOP & TSTG
-65 to +175
°C
RθJC
5
(typ 3.5)
°C/W
SSR08150
SSR08200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS2/
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=0.4A
IF=2A
IF=4A
IF=6A
IF=8A
VF1
VF2
VF3
VF4
VF5
-
0.650
0.770
0.825
0.865
0.900
0.820
0.870
0.950
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=4A
IF=8A
VF6
VF7
-
1.030
1.340
-
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=0.4A
IF=2A
IF=4A
IF=6A
IF=8A
VF8
VF9
VF10
VF11
VF12
-
0.490
0.615
0.685
0.730
0.770
0.690
0.760
0.850
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.3
5
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
50
-
µA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
200
1000
µA
Reverse Leakage Current
Rated VR, TA=150°C, 300 µsec pulse minimum
IR4
-
1000
-
µA
CJ
-
90
65
100
pF
Junction Capacitance
TA=25°C, f=1 MHz
VR =5V
VR =10V
Case Outline: SMD.22 (S.22)
Pin Out:
Pin 1: Cathode
Pin 2: Anode
Pin 3: Anode
Note: For optimal performance,
connect anode terminals together
.220±.007
.065±.010
3
1
.134 .030
.052
.140
.150
±.007
2
.070
.090
.005 TYP
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
2/ For optimal performance, connect anode terminals together.
8
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
SSR08150CTS.22 thru SSR08200CTS.22
150 - 200 Volts, 8 Amps
Hermetic Surface Mount Centertap Schottky Rectifier
SMD.22
(S.22)
▪▪ Extremely small footprint
▪▪ Extremely low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
MAXIMUM RATINGS1/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
4
Amps
IFSM
40
Amps
TOP & TSTG
-65 to +175
°C
RθJC
8
(typ 6.5)
°C/W
SSR08150
SSR08200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C, per leg
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C, per leg
Operating & Storage Temperature
Thermal Resistance
Junction to case, per leg
ELECTRICAL CHARACTERISTICS (PER LEG)
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=0.2A
IF=1A
IF=2A
IF=3A
IF=4A
VF1
VF2
VF3
VF4
VF5
-
0.650
0.770
0.825
0.865
0.900
0.820
0.870
0.950
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=2A
IF=4A
VF6
VF7
-
1.030
1.340
-
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=0.2A
IF=1A
IF=2A
IF=3A
IF=4A
VF8
VF9
VF10
VF11
VF12
-
0.490
0.615
0.685
0.730
0.770
0.690
0.760
0.850
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.15
2
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
20
-
µA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
100
500
µA
Reverse Leakage Current
Rated VR, TA=150°C, 300 µsec pulse minimum
IR4
-
500
-
µA
CJ
-
42
32
50
pF
Junction Capacitance
TA=25°C, f=1 MHz
VR =5V
VR =10V
Case Outline: SMD.22 (S.22)
Pin Out:
Pin 1: Cathode
Pin 2: Anode 1
Pin 3: Anode 2
Note: For optimal performance,
connect anode terminals together
.220±.007
.065±.010
3
1
.134 .030
.052
.140
.150
±.007
2
.070
.090
.005 TYP
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
9
SSR08150CT-6 thru SSR08200CT-6
150 - 200 Volts, 8 Amps
Hermetic Surface Mount Schottky Rectifier
LCC6 (-6)
▪▪ Extremely small footprint
▪▪ Extremely low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
MAXIMUM RATINGS1/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
4
Amps
IFSM
50
Amps
TOP & TSTG
-65 to +175
°C
RθJC
10
(typ 7.5)
°C/W
SSR08150
SSR08200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C, per leg
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C, per leg
Operating & Storage Temperature
Thermal Resistance
Junction to case, per leg
ELECTRICAL CHARACTERISTICS (PER LEG)
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=0.1A
IF=0.5A
IF=1A
IF=2A
IF=4A
VF1
VF2
VF3
VF4
VF5
-
0.57
0.72
0.77
0.84
0.92
0.80
0.85
1.00
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=1A
IF=2A
IF=4A
VF6
VF7
VF8
-
0.92
1.11
1.45
-
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=0.1A
IF=0.5A
IF=1A
IF=2A
IF=4A
VF9
VF10
VF11
VF12
VF13
-
0.43
0.56
0.62
0.70
0.79
0.65
0.71
0.88
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.15
2
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
30
-
µA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
150
200
µA
Reverse Leakage Current
Rated VR, TA=150°C, 300 µsec pulse minimum
IR4
-
600
-
µA
CJ
-
21
16
25
pF
Junction Capacitance
TA=25°C, f=1 MHz
VR =5V
VR =10V
Case Outline: LCC6 (-6)
Pin Out:
Pin 2 & 3: Cathode
Pin 1 & 6: Anode 1
Pin 4 & 5: Anode 2
Note: For optimal performance,
connect anode terminals together
and cathode terminals together
.250
.240
.175
.160
.077
.063
2x .050
(=.100)
.072
.058
.097
.083
5
6
4
1
3
2
4x .025 REF
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
10
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
SED10HB200, SED10HE200, and SED10HF200
200 Volts, 10 Amps
Surface Mount Schottky Rectifier
Sedpack 1 (HB)
▪▪ Low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
Sedpack 1
(HE / HF)
MAXIMUM RATINGS1/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
200
Volts
IO
10
Amps
IFSM
100
Amps
TOP & TSTG
-55 to +175
°C
RθJC
2 (typ 1.6)
2 (typ 1.6)
5.00
°C/W
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=100°C
Peak Surge Current
8.3 msec pulse, half sine wave, 1 pulse, TA=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
SED10HB200
SED10HE200
SED10HF200
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=5A
IF=10A
IF=20A
VF1
VF2
VF3
-
0.75
0.78
0.85
0.80
0.85
0.95
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=5A
IF=10A
IF=20A
VF5
VF6
VF7
-
0.92
1.00
1.24
-
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=5A
IF=10A
IF=20A
VF8
VF9
VF10
-
0.61
0.68
0.76
0.70
0.75
-
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.7
10
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
0.2
-
mA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
0.85
5
mA
CJ
-
185
135
225
-
pF
VR =5V
VR =10V
Junction Capacitance
TA=25°C, f=1 MHz
Case Outline:
Sedpack 1 HB
Case Outline:
Sedpack 1 HE
.225±.010
.225
±.010
.225±.010
.225
±.010
ANODE
Case Outline:
Sedpack 1 HF
.125±.020
.225±.010
.150
±.005
ANODE
.225
±.010
.125±.020
.100
±.005
ANODE
R.025 TYP
R.025 TYP
.095
MAX
CATHODE
.095
MAX
.185±.005
SQ.
CATHODE
.095
MAX
.185±.005
SQ.
.008
.005
.065±.010
CATHODE
.185±.005
SQ.
.008
.005
.065±.010
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
11
SSR10150G / S.5 thru SSR10200G / S.5
150 - 200 Volts, 10 Amps
Surface Mount Schottky Rectifier
Cerpack (G)
▪▪ High surge rating
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Low junction capacitance
▪▪ Ultrasonic aluminum wire bonds
▪▪ Cerpack: 1.05 gr (typ) / SMD.5: 0.95 gr (typ)
▪▪ TX, TXV, and S level screening available - consult factory
SMD.5
(S.5)
MAXIMUM RATINGS1/
SSR10150
SSR10200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C, legs 2 & 3 tied together
Peak Surge Current
8.3 msec pulse, half sine wave, 1 pulse, TA=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
10
Amps
IFSM
100
Amps
TOP & TSTG
-65 to +200
°C
RθJC
3.0
°C/W
SYMBOL
-55°C
25°C
100°C
125°C
150°C
UNIT
Instantaneous Forward Voltage Drop
IF=1 Amps, 300 µsec pulse
typical
maximum
VF
680
-
620
650
515
-
475
530
435
-
mVolts
Instantaneous Forward Voltage Drop
IF=5 Amps, 300 µsec pulse
typical
maximum
VF
925
-
750
800
650
-
610
660
570
-
mVolts
Instantaneous Forward Voltage Drop
IF=10 Amps, 300 µsec pulse
typical
maximum
VF
990
-
780
840
715
-
675
770
640
-
mVolts
Reverse Leakage Current
Rated VR, 300 µsec pulse minimum
typical
maximum
IR
0.0001
-
0.0005
0.005
0.2
-
0.85
5
2.5
-
mA
Junction Capacitance
VR =10 VDC, TA=25°C, f=1 MHz
typical
maximum
CJ
-
135
250
-
-
-
pF
Case Outline: Cerpack (G)
Pin Out:
Tab: Cathode
Pin 1: Anode
Pin 2: Anode
Note: For optimal
performance,
.340 .300
connect anode
terminals together
1
2x .060
(.040)
2
2x .100
Case Outline: SMD.5 (S.5)
Pin Out:
Pin 1: Cathode
Pin 2: Anode 1
Pin 3: Anode 2
Note: For optimal
performance,
connect anode
terminals together
.030 MIN
.408
.392
.304
.288
.304
.288
.135
.115
2
.105±.010
.020
.030 MIN
1
(.050)
.315
.370
.140
.210
3x .020
.010
3
.010
±.002
2x .010
MAX
.233
.217
2x .103
.087
.128
.112
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
12
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
SSR10150J thru SSR10200J
150 - 200 Volts, 10 Amps
Surface Mount Schottky Rectifier
TO-257 (J)
▪▪ High surge rating
▪▪ Low reverse leakage current
▪▪ Isolated hermetically sealed package
▪▪ Ultrasonic aluminum wire bonds
▪▪ Low junction capacitance
▪▪ TX, TXV, and S level screening available - consult factory
MAXIMUM RATINGS1/
SSR10150J
SSR10200J
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C, legs 2 & 3 tied together
Peak Surge Current
8.3 msec pulse, half sine wave, TA=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
10
Amps
IFSM
100
Amps
TOP & TSTG
-65 to +200
°C
RθJC
4.0
°C/W
SYMBOL
-55°C
25°C
100°C
125°C
150°C
UNIT
Instantaneous Forward Voltage Drop
IF=1 Amps, 300 µsec pulse
typical
maximum
VF
690
-
625
650
520
-
475
530
435
-
mVolts
Instantaneous Forward Voltage Drop
IF=5 Amps, 300 µsec pulse
typical
maximum
VF
950
-
780
820
680
-
640
710
600
-
mVolts
Instantaneous Forward Voltage Drop
IF=10 Amps, 300 µsec pulse
typical
maximum
VF
1060
-
845
900
780
-
750
830
710
-
mVolts
Reverse Leakage Current
Rated VR, 300 µsec pulse minimum
typical
maximum
IR
0.0001
-
0.0005
0.005
0.2
-
0.85
5
2.5
-
mA
Junction Capacitance
VR =10 VDC, TA=25°C, f=1 MHz
typical
maximum
CJ
-
135
250
-
-
-
pF
Case Outline: TO-257 (J)
Ø .150
.140
3x Ø.035
.025
.660
.645
.430
.410
.210
.190
1.100
.500
.045
.035
PIN 3
PIN 2
.420
.410
.105
.095
.125
.110
SUFFIX: J
.200
MIN
2x .180
.150
PIN 1
Case Outline: TO-257 (J)
.537
.527
SUFFIX: JDB
.200
MIN
SUFFIX: JUB
.180
.150
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
13
SSR20150CTG / S.5 thru SSR20200CTG / S.5
150 - 200 Volts, 20 Amps
Hermetic Surface Mount Centertap Schottky Rectifier
Cerpack (G)
▪▪ Extremely small footprint
▪▪ Extremely low forward voltage drop
▪▪ Low reverse leakage current
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ 175°C operating junction temperature
▪▪ TX, TXV, and S level screening available - consult factory
SMD.5 (S.5)
MAXIMUM RATINGS1/
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
10
Amps
IFSM
100
Amps
TOP & TSTG
-65 to +175
°C
RθJC
2
°C/W
SSR20150CT
SSR20200CT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TA=25°C, per leg
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TA=25°C, per leg
Operating & Storage Temperature
Cerpack
SMD.5
Thermal Resistance
Junction to case, per leg
ELECTRICAL CHARACTERISTICS (PER LEG)
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF=1A
IF=3A
IF=5A
IF=10A
VF1
VF2
VF3
VF4
-
0.64
0.75
0.81
0.91
0.70
0.90
1.00
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF=1A
IF=3A
IF=5A
IF=10A
VF5
VF6
VF7
VF8
-
0.68
0.84
0.91
1.05
0.75
1.00
1.15
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF=1A
IF=3A
IF=5A
IF=10A
VF9
VF10
VF11
VF12
-
0.48
0.59
0.65
0.76
0.55
0.75
0.86
Volts
Reverse Leakage Current
Rated VR, TA=25°C, 300 µsec pulse minimum
IR1
-
0.4
10
µA
Reverse Leakage Current
Rated VR, TA=100°C, 300 µsec pulse minimum
IR2
-
0.5
-
mA
Reverse Leakage Current
Rated VR, TA=125°C, 300 µsec pulse minimum
IR3
-
0.8
5
mA
CJ
-
185
135
175
pF
VR =5V
VR =10V
Junction Capacitance
TA=25°C, f=1 MHz
Case Outline: Cerpack (G)
Pin Out:
Pin 1: Anode 1
Pin 2: Anode 2
Tab: Cathode
.340 .300
Note: For optimal
performance,
connect anode
terminals together
1
2
1
2x .060
(.040)
2
2x .100
.105±.010
Tab
.020
Case Outline: SMD.5 (S.5)
Pin Out:
Pin 1: Cathode
Pin 2: Anode 1
Pin 3: Anode 2
Note: For optimal
performance,
connect anode
terminals together
.140
.210
.304
.288
.030 MIN
.304
.288
.135
.115
2
.030 MIN
1
(.050)
.315
.370
.408
.392
3x .020
.010
3
.010
±.002
2x .010
MAX
.233
.217
2x .103
.087
.128
.112
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
14
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
SED40KB200 & SSR40G200 Series
150 - 200 Volts, 40 Amps
Power Schottky Diode
Cerpack (G)
▪▪ Low forward voltage drop:
0.95V max @ 40A, 25°C
▪▪ Low reverse leakage
▪▪ Hermetically sealed surface mount package
▪▪ Guard ring for overvoltage protection
▪▪ Eutectic die attach
▪▪ TX, TXV, and S level screening available - consult factory
Sedpack 2
(KE / KF)
MAXIMUM RATINGS1/
SED40__150, SSR40G150
SED40__200, SSR40G200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TC=100°C
Peak Surge Current
8.3 msec pulse, half sine wave, TC=25°C
Operating & Storage Temperature
KE, KB, G
KF
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS
Sedpack 2 (KB)
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
40
Amps
IFSM
500
Amps
TOP & TSTG
-55 to +150
°C
RθJC
1.5
3.5
°C/W
SYMBOL
-55°C
25°C
100°C
125°C
150°C
UNIT
Instantaneous Forward Voltage Drop
IF=5 Amps, 300 µsec pulse
typical
maximum
VF
750
-
670
750
560
-
520
600
480
-
mVolts
Instantaneous Forward Voltage Drop
IF=15 Amps, 300 µsec pulse
typical
maximum
VF
970
-
765
840
655
-
615
700
580
-
mVolts
Instantaneous Forward Voltage Drop
IF=30 Amps, 300 µsec pulse
typical
maximum
VF
1280
-
830
900
725
-
690
750
655
-
mVolts
Instantaneous Forward Voltage Drop
IF=40 Amps, 300 µsec pulse
typical
maximum
VF
1470
-
865
950
760
-
725
810
695
-
mVolts
Reverse Leakage Current
Rated VR, 300 µsec pulse minimum
typical
maximum
IR
0.0001
-
0.0002
0.01
0.1
-
0.6
10
2.5
-
mA
Junction Capacitance
VR =10 VDC, TA=25°C, f=1 MHz
typical
maximum
CJ
-
400
500
-
-
-
pF
Case Outline: Sedpack 2 KB
Case Outline: Cerpack (G)
Case Outline: Sedpack 2 KE
.315±.010
.315±.010
1
2x .060
(.040)
.340 .300
.125±.020
.315
±.010
.315
±.010
.150
2
ANODE
2x .100
.275±.005
SQ.
.105±.010
.020
(.050)
.315
.370
.140
.210
R.025 TYP
.095
MAX
.110
MAX
.0075
.0050
.065
±.010
.275±.005
SQ.
CATHODE
Case Outline: Sedpack 2 KF
.010
±.002
.315±.010
.125±.020
ANODE
.315
±.010
.150
ANODE
.065±.010
.095
MAX
CATHODE
.0075
.0050
.275±.005
SQ.
CATHODE
R.025 TYP
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
15
SSR40150J & SSR40200J
150 - 200 Volts, 40 Amps
Schottky Rectifier
TO-257 (J)
▪▪ Low forward voltage drop: 1.2V max @ 40A, 25°C
▪▪ High surge rating
▪▪ Low reverse leakage current
▪▪ Low junction capacitance
▪▪ Isolated hermetically sealed package
▪▪ Ultrasonic aluminum wire bonds
▪▪ Custom lead forming available
▪▪ TX, TXV, and S level screening available - consult factory
MAXIMUM RATINGS1/
SED40150J
SED40200J
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TC=25°C, legs 2 & 3 tied together
Peak Surge Current
8.3 msec pulse, half sine wave, TC=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
40
Amps
IFSM
250
Amps
TOP & TSTG
-65 to +200
°C
RθJC
2.0
°C/W
SYMBOL
-55°C
25°C
100°C
125°C
150°C
UNIT
Instantaneous Forward Voltage Drop
IF=5 Amps, 300 µsec pulse
typical
maximum
VF
770
-
700
800
580
-
540
650
500
-
mVolts
Instantaneous Forward Voltage Drop
IF=15 Amps, 300 µsec pulse
typical
maximum
VF
1000
-
840
930
740
-
710
800
680
-
mVolts
Instantaneous Forward Voltage Drop
IF=25 Amps, 300 µsec pulse
typical
maximum
VF
1300
-
950
1050
870
-
850
950
820
-
mVolts
Instantaneous Forward Voltage Drop
IF=40 Amps, 300 µsec pulse
typical
maximum
VF
1600
-
1075
1200
1040
-
1000
1100
980
-
mVolts
Reverse Leakage Current
Rated VR, 300 µsec pulse minimum
typical
maximum
IR
0.0001
-
0.002
0.01
0.6
-
3
10
10
-
mA
Junction Capacitance
VR =10 VDC, TA=25°C, f=1 MHz
typical
maximum
CJ
-
400
500
-
-
-
pF
3x Ø.035
.025
Case Outline: TO-257 (J)
Ø .150
.140
.660
.645
.430
.410
.210
.190
1.100
.500
.045
.035
PIN 3
PIN 2
.420
.410
.105
.095
.125
.110
SUFFIX: J
.200
MIN
2x .180
.150
PIN 1
.537
.527
SUFFIX: JDB
.200
MIN
SUFFIX: JUB
.180
.150
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
16
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
SSR80150CTM / Z thru SSR80200CTM / Z
150 - 200 Volts, 80 Amps
Schottky Centertap Rectifier
TO-254Z (Z)
▪▪ Low forward voltage drop:
1.05V max @ 40A, 25°C
▪▪ High surge rating
▪▪ Low reverse leakage current
▪▪ Low junction capacitance
▪▪ Isolated hermetically sealed package
▪▪ Ultrasonic aluminum wire bonds
▪▪ Ceramic seal for improved reliability available
▪▪ TX, TXV, and S level screening available - consult factory
TO-254 (M)
MAXIMUM RATINGS1/
SSR80150
SSR80200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TC=100°C
Peak Surge Current
8.3 msec pulse, half sine wave, TC=25°C, per leg
Operating & Storage Temperature
Junction to Case, each individual diode
Junction to Case (both legs tied together)
Thermal Resistance
ELECTRICAL CHARACTERISTICS (PER LEG)
SYMBOL
VALUE
UNIT
VRWM
VR
150
200
Volts
IO
80
Amps
IFSM
250
Amps
TOP & TSTG
-65 to +200
°C
RθJC
2.0
1.4
°C/W
SYMBOL
-55°C
25°C
100°C
125°C
150°C
UNIT
Instantaneous Forward Voltage Drop
IF=5 Amps, 300 µsec pulse
typical
maximum
VF
765
-
690
790
575
-
540
650
490
-
mVolts
Instantaneous Forward Voltage Drop
IF=15 Amps, 300 µsec pulse
typical
maximum
VF
980
-
815
900
720
-
680
750
650
-
mVolts
Instantaneous Forward Voltage Drop
IF=25 Amps, 300 µsec pulse
typical
maximum
VF
1300
-
900
960
825
-
790
850
760
-
mVolts
Instantaneous Forward Voltage Drop
IF=40 Amps, 300 µsec pulse
typical
maximum
VF
1500
-
1000
1050
960
-
940
1000
920
-
mVolts
Reverse Leakage Current
Rated VR, 300 µsec pulse minimum
typical
maximum
IR
0.0001
-
0.001
0.01
0.5
-
2
10
10
-
mA
Junction Capacitance
VR =10 VDC, TA=25°C, f=1 MHz
typical
maximum
CJ
-
400
500
-
-
-
pF
Case Outline: TO-254
Ø .150
.139
.800
.790 .545
.535
Case Outline: TO-254Z
2x Ø .150
.140
.750
.500
PIN 3
.545
.535
PIN 2
.545
.535
2x .140
.125
.155
.145 .305
.295
2x .275
.255
PIN 1
.155
.140
3x .045
.035
SUFFIX: M
2x .190
.150
.170
MIN
.170
MIN
2x .190
.150
.285
.265
.260
.240
SUFFIX: MD
.305
.295
PIN 2
PIN 1
.260
.240
.050
.040
2x .155
.145
PIN 3
1.090.820 .545 CL
1.050.790 .535
3x Ø.045
.035
.685
.665
.555
.500
SUFFIX: MU
2x .275
.255
.155
.135
.055
.035
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
17
SED100LB / LE / LT150 thru SED100LB / LE / LT200
150 - 200 Volts, 100 Amps
Schottky Rectifier
▪▪ Low forward voltage drop: 0.93V max @ 100A, 25°C
▪▪ Hermetically sealed power surface mount package
▪▪ Low reverse leakage current
▪▪ Guard ring for overvoltage protection
▪▪ Eutectic die attach
▪▪ TX, TXV, and S level screening available - consult factory
Sedpack 3
(LE / LT)
Sedpack 3 (LB)
MAXIMUM RATINGS1/
SED100LE150
SED100LE200
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SYMBOL
VALUE
UNIT
VRRM
VRWM
VR
150
200
Volts
IO
100
Amps
IFSM
1000
Amps
TOP & TSTG
-55 to +150
°C
RθJC
0.3
°C/W
Average Rectified Forward Current
Resistive load, 60 Hz, sine wave, TC=100°C
Peak Surge Current
8.3 msec pulse, half sine wave superimposed on IO, allow junction to reach equilibrium
between pulses, TC=25°C
Operating & Storage Temperature
Thermal Resistance
Junction to case
ELECTRICAL CHARACTERISTICS
SYMBOL
TYPICAL
MAX
UNIT
Instantaneous Forward Voltage Drop
TA=25°C, 300 µsec pulse
IF = 25A
IF = 50A
IF = 75A
IF = 100A
VF1
VF2
VF3
VF4
0.70
0.77
0.81
0.85
0.85
0.93
Volts
Instantaneous Forward Voltage Drop
TA=125°C, 300 µsec pulse
IF = 25A
IF = 50A
IF = 75A
IF = 100A
VF5
VF6
VF7
VF8
0.55
0.62
0.67
0.71
0.70
0.79
Volts
Instantaneous Forward Voltage Drop
TA=150°C, 300 µsec pulse
IF = 25A
IF = 50A
IF = 75A
IF = 100A
VF9
VF10
VF11
VF12
0.50
0.58
0.64
0.68
-
Volts
Instantaneous Forward Voltage Drop
TA=-55°C, 300 µsec pulse
IF = 25A
IF = 50A
IF = 75A
IF = 100A
VF13
VF14
VF15
VF16
0.78
0.95
1.10
1.26
-
Volts
Reverse Leakage Current
Rated VR, 300 µsec pulse minimum
TA=25°C
TA=100°C
TA=125°C
TA=150°C
IR1
IR2
IR3
IR4
3
1.5
6.5
30
50
20
-
µA
mA
mA
mA
VR =5 V
VR =10 V
CJ1
CJ2
2250
1550
2000
pF
Junction Capacitance
TA=25°C, f=1 MHz
Case Outline: Sedpack 3 (LB)
Case Outline: Sedpack 3 (LE)
.410±.010
.410
±.010
.095
MAX
.020±.002
.410±.010
.410
±.010
CL
CL
ANODE
CATHODE
.370±.005
SQ.
.095
MAX
.020±.002
CATHODE
Case Outline: Sedpack 3 (LT)
.125±.020
CL .150
±.005
CL
.370±.005
SQ.
.410±.010
.410
±.010
ANODE
.012
.005
.065±.010
.115
MAX
.020±.002
CATHODE
.125±.020
CL .150
±.005
CL
.315±.005
SQ.
.370±.005
SQ.
ANODE
.012
.005
.065±.010
1/ Unless otherwise specified, all electrical characteristics @ 25°C.
18
200 Volt Hermetic Silicon Schottky Rectifiers
Jump to Table of Contents
High Reliability Screening
Solid State Devices Screening Per MIL-PRF-19500 Guidelines*
TX Level
TXV Level
Equivalent
Equivalent
S Level
Equivalent
Lot Acceptance
Temperature Cycling
Internal Visual1/
Internal Visual1/
Temperature Cycling
Temperature Cycling
Surge
Surge
Surge
(as specified)
(as specified)
(as specified)
Thermal Resp.
Thermal Resp.
Thermal Resp.
(as specified)
(as specified)
(as specified)
Acceleration
(some excluded)
PIND
Serialize
Interim Electrical
(case mount only)
Interim Electrical
(case mount only)
HTRB
HTRB
Interim Electrical
Read & Record
HTRB
48 hrs.
48 hrs.
48 hrs.
Interim Electrical
& Delta
Interim Electrical
& Delta
Interim Electrical
& Delta
Burn-in
Burn-in
Burn-in
Tran. & FET 160 hrs.
Diode & SCR HTRB 96 hrs.
Tran. & FET 160 hrs.
Diode & SCR HTRB 96 hrs.
Interim Electrical
& Delta
Interim Electrical
& Delta
Interim Electrical
& Delta
Hermeticity
Hermeticity
Hermeticity
Case Isolation
X-Ray
(N/A case mount)
Case Isolation
(case isolated packages only)
240 hrs.
(N/A case mount)
(case isolated packages only)
Note: 1/ X-ray in lieu of internal visual for COTS origin parts
External Visual
Case Isolation
(case isolated packages only)
*Specific Product Types May Have Alternate Screening Flows
Contact your local SSDI Representative or contact the factory directly at (562) 404-4474.
Email: [email protected]
Jump to Table of Contents
200 Volt Hermetic Silicon Schottky Rectifiers
19
Sales Representatives
W. Howard Associates, Inc.
CO, UT
12353 E. Easter Ave. Suite 200
Centennial, CO 80112
Phone: 303-766-5755
[email protected]
China
Rironic Electronic
Technology Co., Ltd
Room 1206
China Development Bank Bldg
No 2 First Gaoxin Rd, Xi’an City
Shaanxi Province, P.R. China
+86-029-68683866
[email protected]
www.rironic.com
USA Office: 1456 Newport Center Dr.
Deerfield Beach, FL 33442
954-420-5000
Israel
FMS Aerospace Ltd.
12 Kehilat Venezia Street
Tel-Aviv 69400, Israel
972-3-6094977
[email protected]
605
91
Sa
Fre nta A
ew na
ay
5
55
MACARTHUR BLVD.
Directions from Los Angeles International Airport (LAX):
Italy
Milano Brothers
Viale Enrico Fermi 79
00146 Roma, Italy
+39 3384969298
[email protected]
India
Irys Electronics
Siddarth Iyer
261/2 Plot 4 & 5, Silver Oak Park
Baner Rd, Baner Pune 411045, India
91 20 2729 1836
710
BL
VD
405
Brazil
Techso
Rua Fradique Coutinho, 316 - Cj 41
Sao Paulo - SP, 05416-000 Brazil
(55-11) 3120 5968
[email protected]
Germany
MES Manz Electronic Systeme OHG
Hauptstrasse 46/1
D-74369 Löchgau, Germany
+49-7143-4031-0
110
Ontario
Airport
57
ST
ON
E
105
1
60
RE
John
Wayne
Airport
International
France / Netherlands / Belgium
AR France
7 Rue du fosse blanc - Bat. D1
92230 Gennevilliers, France
+33 (0)1 47 91 75 30
FI
Long Beach
Airport
Giesting & Associates
OH, Western PA, IN, MI
2854 Blue Rock Rd.
Cincinnati, OH 45239
Phone: 513-385-1105
[email protected]
Denmark / Finland / Norway / Sweden
Expando Electronics AB
Mörby Centrum, Plan 7
S-182 31 Danderyd, Sweden
+468 54490044
5
Los Angeles
International
Airport
HAVEN AVE.
ETSI, LLC.
DC, VA, MD
3 Church Circle, Suite 120
Annapolis, MD 21401
Phone: 410-974-9351
Fax: 410-974-8247
10
EXIT
118
VALLEY VIEW AVE.
Scientific Devices - Phila, Inc.
East PA, South NJ, DE
1635 Clemens Rd.
Harleysville, PA19438
Phone: 215-256-8641
FAX: 215-256-8642
[email protected]
San Diego Freeway
CentraMark Technical
Sales Associates
TX, OK, AR, LA
P.O. Box 450877
Garland, TX 75045-0877
Phone: 972-414-8188
Fax: 972-414-6788
SEPULVEDA
BLVD.
Domestic
Map & Directions to
Japan
Sojitz Aerospace
Marunouchi Trust Tower Main
4th Floor, 8-3
Marunouchi 1-chome, Chiyoda-Ku
Tokyo, Japan 100-0005
+81-3-6870-7211
South Korea
CBOL Corporation
19850 Plummer St.
Chatsworth, CA 91311
818-721-5510
[email protected]
Turkey
IMCA Elektronik ve Bilisim Sanayi
ve Ticaret A.S.
Acibadem mah. Cecen sok.
Akasya Acibadem AVM A
Kule Blok no: 25 A/197
34660 Uskudar
Istanbul, Turkey
+90 216 504 07 87
www.imca.com.tr
[email protected]
United Kingdom / Ireland
Johnson Group Services (JGS)
The Ryder Cloisters
36, Evelyn Road
Dunstable, Bedfordshire
LU5 4NG, United Kingdom
+44 (0) 1582 603439
[email protected]
▪▪ Start by going East on World Way, then merge onto South
Sepulveda Blvd.
▪▪ Drive 0.7 miles, (At Tunnel Exit) then take Imperial Highway
West/I-105 East ramp (toward International Terminal). Merge onto
I-105 Freeway toward Norwalk.
▪▪ Drive 16.9 miles, then take I-605 Freeway North.
▪▪ Drive 1.7 miles, then merge onto I-5 Freeway South toward Santa
Ana.
▪▪ Drive 6 miles, then take Exit #118 - Valley View Ave.
▪▪ Turn right at signal onto Valley View Ave.
▪▪ (Ignore the fact that this exit road is named Firestone Blvd, This is
not the correct Firestone Blvd)
▪▪ Go over bridge and turn right at the first signal- Firestone Blvd.
▪▪ Merge into left lane. (Right lane becomes an entry back onto
freeway)
▪▪ Drive 0.7 miles to our facility at 14701 Firestone Blvd.
Directions from John Wayne (Orange County) Airport
(SNA):
▪▪ Begin by taking Airport Way Northeast toward MacArthur Blvd.
▪▪ Turn Left onto MacArthur Blvd.
▪▪ Drive 0.4 miles and merge onto I-405 Freeway North toward Long
Beach.
▪▪ Take the first exit onto Route 55 Freeway North (exit 9A) toward
Riverside.
▪▪ Drive 4.2 miles then exit at I-5 Freeway North (exit 10B) toward
Los Angeles.
▪▪ Drive 15 miles then take the Valley View (Exit #118) exit.
▪▪ Turn right at the first signal (at off-ramp) onto Firestone Blvd.
▪▪ Drive 0.7 miles to our facility at 14701 Firestone Blvd.
AS9100:2009 Rev. C & ISO 9001:2008 Registered
14701 Firestone Blvd. La Mirada, CA 90638
(562) 404 - 4474 | FAX (562) 404-1773
[email protected] | www.ssdi-power.com