STU12L01

Green
Product
STU12L01
S a mHop Microelectronics C orp.
Ver 1.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
Rugged and reliable.
140 @ VGS=10V
100V
TO-252 Package.
12A
245 @ VGS=4.5V
G
S
STU SERIES
TO - 252AA( D - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
12
A
9.6
A
35
A
25
mJ
TC=25°C
50
W
TC=70°C
32
W
-55 to 150
°C
2.5
°C/W
50
°C/W
IDM
-Pulsed
TC=25°C
TC=70°C
a
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Oct,04,2010
1
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STU12L01
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Forward Transconductance
Max
Units
V
uA
1
±100
nA
1.8
3
V
VGS=10V , ID=6A
110
140
m ohm
VGS=4.5V , ID=5A
170
245
m ohm
VDS=10V , ID=6A
5
S
VDS=25V,VGS=0V
f=1.0MHz
480
47
29
pF
pF
pF
9.8
10.2
ns
ns
18
ns
8.5
ns
VDS=50V,ID=6A,VGS=10V
7.8
nC
VDS=50V,ID=6A,
VGS=10V
1.3
nC
2.9
nC
VDS=VGS , ID=250uA
Drain-Source On-State Resistance
Typ
1
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.775
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Oct,04,2010
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STU12L01
Ver 1.2
10
15
12
I D, Drain Current(A)
VGS=7V
9
VGS=6V
6
VGS=5V
3
0
RDS(on)(m Ω)
VGS=8V
0
2.0
1.5
1.0
0.5
2.5
8
6
Tj=125 C
4
-55 C
2
0
3.0
0
3.6
4.8
7.2
6.0
Figure 2. Transfer Characteristics
200
1.8
160
120
V G S =10V
80
40
V G S =10V
I D =6A
1.6
1.4
1.2
1.0
3
1
6
9
12
0
15
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
2.4
Figure 1. Output Characteristics
2.0
0.2
1.2
V GS, Gate-to-Source Voltage(V)
240
1
25 C
V DS, Drain-to-Source Voltage(V)
RDS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=10V
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,04,2010
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STU12L01
Ver 1.2
20.0
420
Is, Source-drain current(A)
I D =6A
350
125 C
210
75 C
140
25 C
70
0
2
4
6
8
0.50
0.75
1.00
1.25
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
450
300
Coss
Crss
10
VDS=50V
ID=6A
8
6
4
2
0
5
10
15
20
25
30
0
1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
80
Tf
1m
it
10
L im
I D, Drain Current(A)
Tr
s
TD(on)
10
0u
TD(off )
10
100
N)
300
(O
C, Capacitance(pF)
0.25
Figure 7. On-Resistance vs.
Gate-Source Voltage
150
Switching Time(ns)
0
V SD, Body Diode Forward Voltage(V)
Ciss
0
25 C
75 C
V GS, Gate-to-Source Voltage(V)
750
0
125 C
1.0
10
900
600
5.0
S
0
10.0
RD
RDS(on)(m Ω)
280
10
DC
s
ms
1
VGS=10V
Single Pulse
TA=25 C
VDS=50V,ID=1A
VGS=10V
0.1
1
1
10
100
0.1
1
10
100
Rg, Gate Resistance( Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,04,2010
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STU12L01
Ver 1.2
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13a.
Figure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Oct,04,2010
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STU12L01
Ver 1.2
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Oct,04,2010
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STU12L01
Ver 1.2
TO-252 Tape and Reel Data
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Oct,04,2010
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