STS6308 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 83 @ VGS= 10V 60V Suface Mount Package. 3A 107 @ VGS= 4.5V D S OT 23 D G S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous TC=25°C 3 A TC=70°C 2.4 A 11.4 A 23 mJ TC=25°C 1.25 W TC=70°C 0.8 W -55 to 150 °C IDM -Pulsed a b d EAS Sigle Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 Details are subject to change without notice. °C/W Jul,15,2010 1 www.samhop.com.tw STS6308 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 60 Typ Max Units 1 ±100 uA nA 1.8 66 3 83 V m ohm VGS=4.5V , ID=2.6A 79 107 m ohm VDS=5V , ID=3A 7.5 S 950 pF pF pF V VDS=48V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=3A 1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=25V,VGS=0V f=1.0MHz 52 40 c VDD=30V ID=1A VGS=10V RGEN= 6 ohm ns ns ns ns 15.7 12 VDS=30V,ID=3A,VGS=10V 21 18.5 15 nC VDS=30V,ID=3A,VGS=4.5V 7 nC 1.8 3.5 nC nC VDS=30V,ID=3A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VGS=0V,IS= 1A VSD 0.795 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Jul,15,2010 2 www.samhop.com.tw STS6308 Ver 1.0 10 15 ID, Drain Current(A) I D, Drain Current(A) VGS=4V VGS=10V 12 VGS=4.5V 9 VGS=3.5V 6 3 8 Tj=125 C 6 4 25 C 2 VGS=3V -55 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 V DS, Drain-to-Source Voltage(V) 150 1.8 RDS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 120 VG S =4.5V VG S =10V 30 3 1 6 9 12 3.6 5.4 4.5 V G S =10V I D =3A 1.6 1.4 V G S =4.5V I D = 2.6A 1.2 1.0 0 15 0 25 50 75 100 125 15 0 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1 2.7 Figure 2. Transfer Characteristics 180 60 1.8 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 90 0.9 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,15,2010 3 www.samhop.com.tw STS6308 Ver 1.0 20.0 180 Is, Source-drain current(A) I D =3A 150 125 C RDS(on)(m Ω) 120 90 75 C 60 25 C 30 0 0 2 4 6 5.0 25 C 75 C 1.0 8 125 C 10.0 10 0 C, Capacitance(pF) V GS, Gate to Source Voltage(V) 1200 Ciss 800 600 400 Coss Crss 1.5 10 V DS = 30V I D =3A 8 6 4 2 5 10 15 20 25 0 30 3 6 9 12 15 21 24 18 Qg, Total Gate Charge(nC) V DS, Drain-to-Source Voltage(V) Figure 9. Capacitance Figure 10. Gate Charge 100 300 I D, Drain Current(A) 100 Switching Time(ns) 1.2 0 0 0 0.9 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage 200 0.6 V SD, Body Diode Forward Voltage(V) V GS, Gate-to-Source Voltage(V) 1000 0.3 TD(off ) TD(on) Tr 10 Tf 10 R 1 10 (O N) L im it 10 10 1m 1 10 10 s DC 0.1 0m 0u us s s s VGS=10V Single Pulse TA=25 C VDS=30V,ID=1A VGS=10V 1 DS 0.01 100 0.1 1 10 60 Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,15,2010 4 www.samhop.com.tw STS6308 Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Therma l R esis tance Norm aliz ed Transien t 10 1 0.5 0.2 0. 1 P DM 0.1 t1 0.05 t2 0.02 Single Pulse 0.01 0.01 0.0000 1 1. 2. 3. 4. 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,15,2010 5 www.samhop.com.tw STS6308 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT 23 D E1 1 2 e b DETAIL "A" A1 e1 L DETAIL "A" A E 3 SYMBOLS D E E1 e e1 b C A A1 L L1 L1 MILLIMETERS INCHES MIN MAX 2.700 3.100 2.200 3.000 1.200 1.700 0.850 1.150 1.800 2.100 0.350 0.510 0.090 0.200 0.000 0.102 0.887 1.200 0.450 REF. 0.550 REF. MIN MAX 0.106 0.122 0.118 0.087 0.047 0.067 0.033 0.045 0.071 0.083 0.020 0.014 0.008 0.004 0.000 0.004 0.035 0.047 0.018 REF. 0.022 REF. 0 O 10 O 0 O 10 O Jul,15,2010 6 www.samhop.com.tw STS6308 Ver 1.0 SOT-23 Tape and Reel Data SOT-23 Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT-23 A0 3.20 ²0.10 B0 3.00 ²0.10 K0 D0 D1 E E1 E2 P0 P1 P2 T 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.20 ²0.02 1.33 ²0.10 О1.00 +0.25 О1.50 +0.10 8.00 +0.30 -0.10 SOT-23 Reel UNIT:р TAPE SIZE REEL SIZE M N W W1 H K S G R V 8р О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 5.00 18.00 Jul,15,2010 7 www.samhop.com.tw