SAMHOP STM4820

Green
Product
STM4820
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
21 @ VGS=10V
30V
Suface Mount Package.
8.9A
30 @ VGS=4.5V
ESD Protected.
S O-8
1
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
EAS
-Pulsed
Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
30
±20
Units
V
V
8.9
A
7.1
45
A
A
10
mJ
TA=25°C
2.5
W
TA=70°C
1.6
W
-55 to 150
°C
50
°C/W
TA=25°C
TA=70°C
a
b
a
THERMAL CHARACTERISTICS
a
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Aug,05,2008
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STM4820
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
Min
VGS=0V , ID=250uA
30
Typ
VGS=4.5V , ID=7.5A
VDS=10V , ID=8.9A
uA
1.7
17
3
21
V
m ohm
23
14
30
m ohm
Diode Forward Voltage
S
460
135
75
pF
pF
pF
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
8
12
19
26
ns
ns
ns
ns
VDS=15V,ID=8.9A,VGS=10V
7.6
nC
VDS=15V,VGS=0V
f=1.0MHz
c
VDS=15V,ID=8.9A,VGS=4.5V
3.8
nC
VDS=15V,ID=8.9A,
VGS=10V
1.2
3.6
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
uA
1
±10
VGS= ±20V , VDS=0V
1
Units
V
VDS=24V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=8.9A
Max
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Conditions
VGS=0V,IS=2.0A
0.78
2.0
A
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,RG=25Ω,VDD=20V,VGS=10V.(See Figure13)
Aug,05,2008
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STM4820
Ver 1.0
20
35
VGS=10V
VGS=4V
VGS=4.5V
ID, Drain Current(A)
I D, Drain Current(A)
28
VGS=3.5V
21
14
VGS=3V
7
16
12
8
4
25 C
0
0
0
0.5
1
1.5
2
2.5
0
3
V DS, Drain-to-Source Voltage(V)
50
1.5
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
1.6
40
VGS=4.5V
20
VGS=10V
10
1
7
14
21
28
1.4
2.1
2.8
3.5
4.2
Figure 2. Transfer Characteristics
60
30
0.7
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1
-55 C
Tj=125 C
1.3
1.2
V G S =4.5V
I D =7.5A
1.1
0.0
35
V G S =10V
I D =8.9A
1.4
0
75
50
25
100
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.3
VDS=VGS
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,05,2008
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STM4820
Ver 1.0
60
20.0
Is, Source-drain current(A)
ID=8.9A
R DS(on)(m Ω)
50
40
75 C
125 C
30
20
25 C
10
0
0
2
4
6
8
0.6
0.8
1.0
1.2
1.4
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
0.4
V SD, Body Diode Forward Voltage(V)
Ciss
400
300
200
Coss
100
Crss
0
5
10
15
20
25
VDS=15V
ID=8.9A
8
6
4
2
0
30
0
1
3
2
4
5
6
7
8
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
9
100
100
60
I D, Drain Current(A)
600
Switching Time(ns)
75 C
125 C
V GS, Gate-to-Source Voltage(V)
500
Tr
TD(on)
TD(off )
Tf
10
VDS=15V,ID=1A
1
10
6 10
60 100
Rg, Gate Resistance(Ω)
(O
N)
L im
it
10
1m
DC
1
0.05
0.1
300 600
R
DS
10
0.1
VGS=10V
1
25 C
1.0
10
600
0
10.0
0u
s
s
ms
1s
V G S =10V
S ingle P uls e
T A =25 C
1
10
30
70
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Aug,05,2008
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STM4820
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
1
Normalized Transient
Thermal Resistance
0.5
0.2
0.1
0.1
0.05
0.02
P DM
0.01
0.01
t1
Single Pulse
t2
1.
2.
3.
4.
0.001
0.0000 1
0.000 1
0.001
0.01
0. 1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Aug,05,2008
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STM4820
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
SO-8
1
L
E
D
A
C
0.015X45±
B
A1
e
0.008
TYP.
0.016 TYP.
0.05 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
Aug,05,2008
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STM4820
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
A0
SOP 8N
150п
6.50
²0.15
B0
5.25
²0.10
K0
D0
2.10
²0.10
ӿ1.5
(MIN)
D1
E
ӿ1.55
²0.10
12.0
+0.3
- 0.1
E1
1.75
²0.10
E2
P0
5.5
²0.10
8.0
²0.10
P1
4.0
²0.10
P2
T
2.0
²0.10
0.30
²0.013
SO-8 Reel
W1
S
K
V
M
N
G
R
H
W
UNIT:р
TAPE SIZE
12 р
REEL SIZE
M
N
W
W1
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
H
ӿ12.75
+ 0.15
K
S
G
R
V
2.0
²0.15
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