Green Product STM4820 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 21 @ VGS=10V 30V Suface Mount Package. 8.9A 30 @ VGS=4.5V ESD Protected. S O-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM EAS -Pulsed Sigle Pulse Avalanche Energy d PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Limit 30 ±20 Units V V 8.9 A 7.1 45 A A 10 mJ TA=25°C 2.5 W TA=70°C 1.6 W -55 to 150 °C 50 °C/W TA=25°C TA=70°C a b a THERMAL CHARACTERISTICS a R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Aug,05,2008 1 www.samhop.com.tw STM4820 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Min VGS=0V , ID=250uA 30 Typ VGS=4.5V , ID=7.5A VDS=10V , ID=8.9A uA 1.7 17 3 21 V m ohm 23 14 30 m ohm Diode Forward Voltage S 460 135 75 pF pF pF VDD=15V ID=1A VGS=10V RGEN=6 ohm 8 12 19 26 ns ns ns ns VDS=15V,ID=8.9A,VGS=10V 7.6 nC VDS=15V,VGS=0V f=1.0MHz c VDS=15V,ID=8.9A,VGS=4.5V 3.8 nC VDS=15V,ID=8.9A, VGS=10V 1.2 3.6 nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD uA 1 ±10 VGS= ±20V , VDS=0V 1 Units V VDS=24V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=8.9A Max c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions VGS=0V,IS=2.0A 0.78 2.0 A 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,RG=25Ω,VDD=20V,VGS=10V.(See Figure13) Aug,05,2008 2 www.samhop.com.tw STM4820 Ver 1.0 20 35 VGS=10V VGS=4V VGS=4.5V ID, Drain Current(A) I D, Drain Current(A) 28 VGS=3.5V 21 14 VGS=3V 7 16 12 8 4 25 C 0 0 0 0.5 1 1.5 2 2.5 0 3 V DS, Drain-to-Source Voltage(V) 50 1.5 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 1.6 40 VGS=4.5V 20 VGS=10V 10 1 7 14 21 28 1.4 2.1 2.8 3.5 4.2 Figure 2. Transfer Characteristics 60 30 0.7 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C Tj=125 C 1.3 1.2 V G S =4.5V I D =7.5A 1.1 0.0 35 V G S =10V I D =8.9A 1.4 0 75 50 25 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,05,2008 3 www.samhop.com.tw STM4820 Ver 1.0 60 20.0 Is, Source-drain current(A) ID=8.9A R DS(on)(m Ω) 50 40 75 C 125 C 30 20 25 C 10 0 0 2 4 6 8 0.6 0.8 1.0 1.2 1.4 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) C, Capacitance(pF) 0.4 V SD, Body Diode Forward Voltage(V) Ciss 400 300 200 Coss 100 Crss 0 5 10 15 20 25 VDS=15V ID=8.9A 8 6 4 2 0 30 0 1 3 2 4 5 6 7 8 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 9 100 100 60 I D, Drain Current(A) 600 Switching Time(ns) 75 C 125 C V GS, Gate-to-Source Voltage(V) 500 Tr TD(on) TD(off ) Tf 10 VDS=15V,ID=1A 1 10 6 10 60 100 Rg, Gate Resistance(Ω) (O N) L im it 10 1m DC 1 0.05 0.1 300 600 R DS 10 0.1 VGS=10V 1 25 C 1.0 10 600 0 10.0 0u s s ms 1s V G S =10V S ingle P uls e T A =25 C 1 10 30 70 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Aug,05,2008 4 www.samhop.com.tw STM4820 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 t1 Single Pulse t2 1. 2. 3. 4. 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,05,2008 5 www.samhop.com.tw STM4820 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Aug,05,2008 6 www.samhop.com.tw STM4820 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 5.25 ²0.10 K0 D0 2.10 ²0.10 ӿ1.5 (MIN) D1 E ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 5.5 ²0.10 8.0 ²0.10 P1 4.0 ²0.10 P2 T 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 H ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Aug,05,2008 7 www.samhop.com.tw