Green Product STM4605 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 39 @ VGS=-10V -40V Suface Mount Package. -6A 58 @ VGS=-4.5V S O-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -6 A -4.8 A -33.5 A 46 mJ TC=25°C 2.5 W TC=70°C 1.6 W -55 to 150 °C 50 °C/W IDM -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Jul,27,2010 1 www.samhop.com.tw STM4605 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Min VGS=0V , ID=-250uA -40 Typ Max Units -1 ±100 uA nA -1.7 -3 V 31 39 m ohm 43 58 m ohm V VDS= -32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-6A VGS=-4.5V , ID=-4.9A VDS=-5V , ID=-6A -1 16.5 S 970 pF pF c Reverse Transfer Capacitance tD(ON) tr tD(OFF) tf Conditions Fall Time VDS=-20V,VGS=0V f=1.0MHz pF c VDD=-20V ID=-1A VGS=-10V RGEN=6 ohm 14 ns 16 ns 63 34 ns ns VDS=-20V,ID=-6A,VGS=-10V 20 nC VDS=-20V,ID=-6A,VGS=-4.5V 10 1.9 5.2 nC nC VDS=-20V,ID=-6A, VGS=-10V Gate-Drain Charge 120 100 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage b VGS=0V,IS=-2A -0.8 -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Jul,27,2010 2 www.samhop.com.tw STM4605 Ver 1.0 15 30 V G S = -4.5V V G S = -4V -ID, Drain Current(A) 24 -I D, Drain Current(A) V G S = -10V V G S = -3.5V 18 12 V G S = -3V 6 12 9 6 125 C 3 -55 C 25 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -V DS, Drain-to-Source Voltage(V) 75 1.8 RDS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 60 VG S =-4.5V 45 30 VG S = -10V 15 6 12 18 24 3.2 4.0 4.8 V G S =-10V I D =-6A 1.6 1.4 1.2 V G S =-4.5V I D = -4.9A 1.0 0 30 0 25 50 75 100 125 150 T j ( °C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics 90 1 1.6 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 0.8 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 1.10 1. 05 1.00 0. 95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,27,2010 3 www.samhop.com.tw STM4605 Ver 1.0 20.0 90 -Is, Source-drain current(A) I D =-6A RDS(on)(m Ω) 75 60 125 C 45 30 75 C 25 C 15 0 0 2 4 6 8 125 C 10.0 5.0 1.0 10 0 -V GS, Gate-to-Source Voltage(V) 0.50 0.75 1.00 1.25 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1500 1250 C, Capacitance(pF) 0.25 -V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage C is s 1000 750 500 Co s s 250 C rs s 0 0 5 10 15 20 25 V DS = -20V I D =-6A 8 6 4 2 0 0 30 3 -V DS, Drain-to-Source Voltage(V) 6 9 12 15 21 24 18 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 300 100 TD(off ) 10 -ID, Drain Current(A) Switching Time(ns) 25 C 75 C Tf Tr TD(on) 10 VDS=-20V,ID=-1A VGS=-10V R (O DS N) L im it 10 1m 10 10 1s 10 s DC 1 0m 0u s s ms s VGS=-10V Single Pulse TA=25 C 0.1 0.03 1 1 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 40 -V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jul,27,2010 4 www.samhop.com.tw STM4605 Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 t1 t2 Single Pulse 0.001 0.00001 0.0001 0.001 1. 2. 3. 4. 0.01 0.1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t ) Duty C ycle, D=t1/t 2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,27,2010 5 www.samhop.com.tw STM4605 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 D E A2 A 1 e A1 b H h X 45 O C L SYMBOLS A A1 A2 b C D E e H L h MILLIMETERS MAX MIN INCHES MAX MIN 1.75 1.35 0.25 0.10 1.63 1.25 0.51 0.31 0.17 0.25 4.80 5.00 3.70 4.00 1.27 REF. 5.80 6.20 1.27 0.40 0± 8± 0.25 0.50 0.053 0.069 0.010 0.004 0.064 0.049 0.020 0.012 0.010 0.007 0.197 0.189 0.157 0.146 0.050 BSC 0.228 0.244 0.016 0.050 8± 0± 0.020 0.010 Jul,27,2010 6 www.samhop.com.tw STM4605 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE REEL SIZE M N W W1 H 12 р ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Jul,27,2010 7 www.samhop.com.tw