Green Product STU/D441S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 35 @ VGS=10V -40V Suface Mount Package. -27A 61 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range ±20 V -27 V A TC=70°C -21.6 A -82 A 49 mJ d PD Units TC=25°C b -Pulsed Sigle Pulse Avalanche Energy Limit -40 TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. °C/W Feb,06,2010 1 www.samhop.com.tw STU/D441S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -40 Typ Max Units V uA 1 ±100 nA -1.9 -3 V 28 35 VGS=-4.5V , ID=-10A 45 61 m ohm m ohm VDS=-10V , ID=-13.5A 23 S 1025 127 110 pF pF pF 18 19 68 25 ns ns ns ns VDS=-20V,ID=-13.5A,VGS=-10V 22.5 nC VDS=-20V,ID=-13.5A,VGS=-4.5V 10.5 nC VDS=-20V,ID=-13.5A, VGS=-10V 2.1 6.5 nC nC VDS=-32V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-13.5A -1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=-20V,VGS=0V f=1.0MHz c VDD=-20V ID=-1.0A VGS=-10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Is Maximum Continuous Drain-Source Forward Current VSD Diode Forward Voltage b VGS=0V,IS= -2A -0.8 -2 A -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13) Feb,06,2010 2 www.samhop.com.tw STU/D441S Ver 1.0 30 30 V G S =-4.5V 25 C V G S =-4V 24 -I D, Drain Current(A) -I D, Drain Current(A) V G S =-10V 18 V G S =-3.5V 12 6 V G S =-3V 24 T j=125 C 18 12 6 -55 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 -V DS, Drain-to-Source Voltage(V) 75 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 60 V G S =4.5V 45 30 V G S =10V 15 6 12 18 24 3.6 5.4 4.5 V G S =-10V I D =-13.5A 1.6 1.4 1.2 V G S =-4.5V I D =-10A 1.0 0 30 0 25 50 75 100 150 125 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 2.7 Figure 2. Transfer Characteristics 90 1 1.8 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 0.9 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Feb,06,2010 3 www.samhop.com.tw STU/D441S Ver 1.0 120 20.0 Is, Source-drain current(A) ID=-13.5A RDS(on)(m Ω) 100 80 60 125 C 40 20 0 25 C 75 C 0 2 4 6 8 125 C 10.0 5.0 75 C 1.0 0.2 10 -V GS, Gate-to-Source Voltage(V) 0.6 0.8 1.0 1.2 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1200 C is s 1000 C, Capacitance(pF) 0.4 25 C 800 600 400 C os s 200 C rs s 0 V DS =-20V I D =-13.5A 8 6 4 2 0 0 5 10 15 20 25 30 0 -V DS, Drain-to-Source Voltage(V) 3 9 6 12 15 18 21 24 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 100 Switching Time(ns) Tf -ID, Drain Current(A) TD(off) Tr TD(on) 10 VDS=-20V,ID=-1A VGS=-10V 1 R ( DS ) ON L im it 10 1m 0u s s 10 m DC s 10 VGS=-10V Single Pulse TA=25 C 1 0.3 1 6 10 6 100 0.1 Rg, Gate Resistance(Ω) 1 10 100 -V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Feb,06,2010 4 www.samhop.com.tw STU/D441S Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Feb,06,2010 5 www.samhop.com.tw STU/D441S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Feb,06,2010 6 www.samhop.com.tw STU/D441S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Feb,06,2010 7 www.samhop.com.tw STU/D441S Ver 1.0 TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape D1 B0 E E2 T E1 P1 P2 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE M N W T H K S ӿ 330 ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 - 0 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Feb,06,2010 8 www.samhop.com.tw