RK7002A Transistors Switching (60V, 300mA) RK7002A (2) ∗Gate Protection Diode. (1) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. !Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V ID IDP∗1 300 mA 1.2 A IDR IDRP∗1 300 mA Continuous Pulsed Continuous Pulsed Total power dissipation PD∗2 1.2 A 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55~+150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When using 1×0.75×0.062 inch glass epoxy board. 2.9 1.9 0.15 0.2Min. 0~0.1 ROHM : SST3 EIAJ : SOT-23 (3) Drain reverse current 0.45 0.95 2.4 !Equivalent circuit Drain current (2) (1) (3) 0.4 1.3 !Structure Silicon N-channel MOSFET transistor Parameter 0.95 0.95 !External dimensions (Units : mm) !Features 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. Each lead has same dimensions Abbreviated symbol : RKS (1) Source (2) Gate (3) Drain RK7002A Transistors !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±20V, VDS=0V V (BR) DSS 60 − − V ID=10µA, VGS=0V IDSS − − 1 µA VDS=60V, VGS=0V VGS (th) 1 − 2.5 V VDS=10V, ID=1mA − 0.7 1.0 − 1.1 1.5 Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Drain-source on-state resistance RDS (on)∗1 Ω Test Conditions ID=300mA, VGS=10V ID=300mA, VGS=4V Yfs l∗1 200 − − mS VDS=10V, ID=300mA Input capacitance Ciss − 33 − pF Output capacitance Coss − 14 − pF VDS=10V VGS=0V f=1MHz Forward transfer admittance l Crss − 9 − pF td (on)∗2 − 6 − ns tr∗2 − 5 − ns td (off)∗2 − 13 − ns tf∗2 − 80 − ns Total gate charge Qg∗2 − 3 6 nC Gate-source charge Qgs∗2 − 0.6 − nC Gate-drain charge Qgd∗2 − 0.5 − nC Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time ID=150mA, VDD 30V VGS=10V RL=200Ω RGS=10Ω VDD 30V VGS=10V ID=200mA ∗1 PW≤300µs, Duty cycle≤1% ∗2 Pulsed !Packaging specifications Taping Package Type Code T116 Basic ordering unit (pieces) 3000 RK7002A 1 1.2 10V 6V VDS=10V Pulsed 4V 8V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 1.0 GATE THRESHOLD VOLTAGE : VGS (th) (V) !Electrical characteristic curves 0.8 3.5V 0.6 0.4 VGS=3V 0.1 Ta=−25°C 25°C 75°C 125°C 0.01 0.2 0.0 0.0 Ta=25°C Pulsed 0.5 1.0 1.5 2.0 2.5 3.0 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical output characteristics 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical transfer characteristics 2.5 VDS=10V ID=1mA Pulsed 2.0 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.3 Gate threshold voltage vs. channel temperature RK7002A Transistors 10 Ta=125°C 75°C 25°C −25°C 1.0 0.1 Ta=125°C 75°C 25°C −25°C 1.0 0.1 0.01 1.0 0.1 DRAIN CURRENT : I D (A) 1.0 ID=300mA 150mA 0 25 50 75 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0.0 100 125 150 CAPACITANCE : C (pF) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 0.2 0.4 0.6 0.8 Ta=−25°C 25°C Ta=75°C 125°C 0.01 VGS=10V Pulsed DRAIN CURRENT : ID (A) Fig.10 Forward transfer admittance vs. drain current 1 5 10 15 1 VGS=10V 0.1 0V 0.01 0.2 0.4 0.6 0.8 Ciss Coss Crss Ta=25°C f=1MHz VGS=0V 1 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical capacitance vs. drain-source voltage 100 1.2 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage ( ΙΙ ) 1000 10 20 Ta=25°C Pulsed 0.001 0.0 1.2 1.0 100 0.1 0 Fig.6 Static drain-source on-state resistance vs. gate-source voltage Fig.8 Reverse drain current vs. source-drain voltage ( Ι ) 1 0.01 1 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature 0.001 0.001 150mA 2 10 VGS=0V Pulsed 0.1 CHANNEL TEMPERATURE : Tch (°C) 0.1 ID=300mA 3 0 REVERSE DRAIN CURRENT : IDR (A) REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1 1.5 0.0 −50 −25 4 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static drain-source on-state resistance vs. drain current ( ΙΙ ) VGS=10V Pulsed 0.5 5 DRAIN CURRENT : I D (A) Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 2.0 Ta=25°C Pulsed 6 1.0 SWITCHING TIME : t (ns) 0.1 0.01 7 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 10 tf Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed 100 td (off) 10 td (on) tr 1 1 10 100 1000 DRAIN CURRENT : I D (A) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) RK7002A Transistors !Switching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time measurement circuit tr td (off) tf toff Fig.14 Switching time waveforms Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0