2SK2715 Transistors 10V Drive Nch MOS FET 2SK2715 zExternal dimensions (Unit : mm) zStructure Silicon N-channel MOSFET CPT3 6.5 5.1 2.3 0.75 0.65 0.9 (1)Gate 2.3 (1) (2)Drain (2) (3) 2.3 0.8Min. 2.5 0.9 1.5 5.5 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuit can be simple. 6) Parallel use is easy. 9.5 1.5 0.5 0.5 1.0 Abbreviated symbol : K2715 (3)Source zApplication Switching zPackaging specifications Package Taping TL Code Type zInner circuit Basic ordering unit (pieces) 2500 2SK2715 (1) Gate (2) Drain (3) Source (1) (2) (3) zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V Parameter Drain current Reverse drain current Continuous Pulsed Continuous Pulsed ID 2 A IDP∗ 6 A IDR 2 A IDRP∗ 6 A Total power dissipation (Tc=25°C) PD 20 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗Pw≤10µs, Duty cycle≤1% Rev.B 1/4 2SK2715 Transistors zElectrical characteristics (Ta=25°C) Parameter Min. Typ. Max. Unit IGSS − − ±100 nA VGS=±30V, VDS=0V V(BR)DSS 500 − − V ID=1mA, VGS=0V Symbol Gate-source leakage Drain-source breakdown voltage Test Conditions IDSS − − 100 µA VDS=500V, VGS=0V Gate threshold voltage VGS(th) 2.0 − 4.0 V VDS=10V, ID=1mA Static drain-source on-state resistance RDS(on)∗ − 3.0 4.0 Ω ID=1A, VGS=10V Forward transfer admittance | Yfs | ∗ 0.6 1.5 − S ID=1A, VDS=10V 280 − pF VDS=10V − pF VGS=0V Zero gate voltage drain current Input capacitance Ciss − Output capacitance Coss − 58 − Reverse transfer capacitance Crss 23 − pF f=1MHz Turn-on delay time td(on) ∗ − 10 − ns ID=1A, VDD 150V tr ∗ − 12 − ns VGS=10V td(off) ∗ − 30 − ns RL=150Ω tf ∗ − 63 − ns RG=10Ω Reverse recovery time trr ∗ − 410 − ns IDR=2A, VGS=0V Reverse recovery charge Qrr ∗ − 1.7 − µC di/dt=100A/µs Rise time Turn-off delay time Fall time ∗ Pulsed zElectrical characteristic curves ar m s 0.1 0.05 0.02 Tc=25°C Single pulse 0.01 1 2 5 10 20 1.6 1.4 1.2 0.8 0.6 0.4 4.5V 0.2 4V DRAIN-SOURCE VOLTAGE : VDS (V) 5.6 4.8 4.0 3.2 2.4 1.6 0.8 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.4 Gate threshold voltage vs. channel temperature 2 3 4 5 6 7 8 50 9 10 0.5 0.2 1 2 3 4 5 6 7 8 GATE-SOURCE VOLTAGE : VGS (V) Fig.3 Typical transfer characteristics 8 VGS=4V Pulsed 10 Ta=125°C 75°C 25°C 2 75°C 125°C 1 0.1 20 5 25°C 2 0.05 0 Fig.2 Typical output characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (W) GATE THRESHOLD VOLTAGE : VGS(th) (V) VDS=10V lD=1mA 1 VDS=10V Pulsed Ta=−25°C DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Maximum safe operating area 6.4 5V 1.0 0 0 50 100 200 500 1000 DRAIN CURRENT : ID (A) 10 0.2 0 −50 −25 5 6V DRAIN CURRENT : ID (A) t S( in RD n io by 2 t a d er ite 1 Op lim is 0.5 10 Ta=25°C Pulsed VGS=10V 1.8 ) on s 0µ s 10 1m s n m tio 00 ra =1 pe PW C O D DRAIN CURRENT : ID (A) 2.0 ea s hi 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 10 −25°C 1 0.5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 DRAIN CURRENT : I D (A) Fig.5 Static drain-source on-state resistance vs. drain current 5 Ta=25°C Pulsed 7 6 5 4 ID=2A 3 1A 2 1 0 5 10 15 20 25 30 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage Rev.B 2/4 2SK2715 10 8 6 ID=2A 4 1A 2 0 −50 −25 0 25 50 75 100 125 150 5 VDS=10V Pulsed 2 −25°C 25°C 75°C Ta=125°C 1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.1 0.2 CHANNEL TEMPERATURE : Tch (°C) 1 0.5 0.2 0.1 0.5 1.0 Ciss Coss 20 Crss 14 VDD=100V 250V 400V 300 250 VGS 8 150 6 VDD=400V 250V 100V 100 50 0 0 12 10 200 4 8 12 16 20 4 2 24 28 5 10 20 50 100 200 0 32 TOTAL GATE CHARGE : Qg (nC) Fig.13 Dynamic input characteristics (See Figure 18 for measurement circuit) 0.5 1.0 1.5 Ta=25°C VDD=150V VGS=10V RG=10Ω Pulsed 200 100 tf 50 td(off) 20 tr 5 0.1 5001000 td(on) 0.2 0.5 1 2 5 10 20 DRAIN CURRENT : ID (A) Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 16 and 17 for the measurement circuit and resultant waveforms) 5000 GATE-SOURCE VOLTAGE : VGS (V) 350 2 DRAIN-SOURCE VOLTAGE : VDS (V) REVERSE RECOVERY TIME : trr (ns) DRAIN-SOURCE VOLTAGE : VDS (V) 400 VDS 0.1 10 2 1 1.5 20 Ta=25°C ID=5A 18 Pulsed 16 0.2 500 10 Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 450 0.5 1000 100 50 Ta=125°C 75°C 25°C −25°C Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 200 SOURCE-DRAIN VOLTAGE : VSD (V) 500 1 SOURCE-DRAIN VOLTAGE : VSD (V) 5 0.05 0 2 VGS=0V Pulsed 0.05 0 5 2 Ta=25°C VGS=0V f=1MHz Pulsed 500 CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 1000 VGS=0V 10V 1 Fig.8 Forward transfer admittance vs. drain current Ta=25°C Pulsed 2 0.5 5 DRAIN CURRENT : I D (A) Fig.7 Static drain-source on-state resistance vs. channel temperature 5 REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed SWITCHING TIME : t (ns) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 12 FORWARD TRANSFER ADMITTANCE : |YfS| (S) Transistors Ta=25°C di/dt=100A/µs VGS=0V 2000 Pulsed 1000 500 200 100 50 0.1 0.2 0.5 1 2 5 10 REVERSE DRAIN CURRENT : IDR (A) Fig.14 Reverse recovery time vs. reverse drain current Rev.B 3/4 2SK2715 Transistors NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 Tc=25°C θth(ch-c) (t)=r(t) · θth(ch-c) θth(ch-c)=6.25°C/W 0.01 0.01 Single pulse 0.001 10µ PW D=PW T T 100µ 1m 10m 100m 1 10 PULSE WIDTH : PW (s) Fig.15 Normalized transient thermal resistance vs. pulse width zSwitching characteristics measurement circuit Pulse width VGS ID D.U.T. RG VDS RL VGS 90% 50% 10% 50% 10% VDS 10% VDD 90% 90% td(on) ton Fig.16 Switching time measurement circuit IG=2mA RG VGS ID D.U.T. tr td(off) tf toff Fig.17 witching time waveforms VDS RL VDD Fig.18 Gate charge measurement circuit Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1