ROHM RHU002N06

RHU002N06
Transistors
Switching (60V, 200mA)
RHU002N06
2.0
(1)
1.3
(2)
0.65 0.65
0.9
(3)
0.3
0.7
zExternal dimensions (Unit : mm)
zFeatures
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
1.25
0.1Min.
zStructure
Silicon N-channel
MOSFET transistor
0~0.1
0.15
0.2
2.1
Each lead has same dimensions
Abbreviated symbol : KP
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Source
(2) Gate
(3) Drain
zEquivalent circuit
(3)
(2)
∗Gate Protection Diode.
(1)
(1) Source
(2) Gate
(3) Drain
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
Source current
Continuous
ID
Pulsed
IDP
Continuous
IS
200
mA
Pulsed
ISP ∗1
800
mA
∗1
∗2
200
mA
800
mA
Total power dissipation
PD
200
mW
Channel temperature
Tch
150
˚C
Storage temperature
Tstg
−55 to +150
˚C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended
1/4
RHU002N06
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
µA
VGS=±20V, VDS=0V
V (BR) DSS
60
−
−
V
ID=10µA, VGS=0V
IDSS
−
−
1
µA
VDS=60V, VGS=0V
VGS (th)
1
−
2.5
V
VDS=10V, ID=1mA
−
1.7
2.4
−
2.8
4.0
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Drain-source on-state resistance RDS (on)∗1
Ω
Test Conditions
ID=200mA, VGS=10V
ID=200mA, VGS=4V
Yfs l∗1
100
−
−
mS
VDS=10V, ID=200mA
Input capacitance
Ciss
−
15
−
pF
Output capacitance
Coss
−
8
−
pF
Reverse transfer capacitance
Crss
−
4
−
pF
VDS=10V
VGS=0V
f=1MHz
td (on)∗2
−
6
−
ns
tr∗2
−
5
−
ns
td (off)∗2
−
12
−
ns
t f ∗2
−
95
−
ns
l
Forward transfer admittance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Qg∗2
−
2.2
4.4
nC
Gate-source charge
Qgs∗2
−
0.6
−
nC
Gate-drain charge
Qgd∗2
−
0.3
−
nC
ID=100mA, VDD 30V
VGS=10V
RL=300Ω
RGS=10Ω
VDD 30V
VGS=10V
ID=200mA
∗1 PW≤300µs, Duty cycle≤1%
∗2 Pulsed
zPackaging specifications
Taping
Package
Type
Code
T106
Basic ordering unit (pieces)
3000
RHU002N06
1
0.8
10V
0.7
DRAIN CURRENT : ID (A)
8V
6V
0.6
0.5
4V
0.4
0.3
3.5V
0.2
VGS=3V
DRAIN CURRENT : ID (A)
Ta=25°C
Pulsed
VDS=10V
Pulsed
0.1
Ta=−25˚C
25˚C
75˚C
125˚C
0.01
0.1
0.0
0.0 0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Output Characteristics
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical Transfer Characteristics
GATE THRESHOLD VOLTAGE : VGS (th) (V)
zElectrical characteristic curves
2.5
VDS=10V
ID=1mA
Pulsed
2.0
1.5
1.0
0.5
0.0
−50 −25
0
25
50
75
100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
2/4
RHU002N06
Transistors
10
Ta=125°C
75°C
25°C
−25°C
0.1
Ta=125°C
75°C
25°C
−25°C
1.0
0.01
1.0
0.1
DRAIN CURRENT : I D (A)
1
REVERSE DRAIN CURRENT : IDR (A)
2.5
ID=200mA
2.0
100mA
25
50
75
0.1
Ta=125°C
75°C
25°C
−25°C
0.01
0.001
0.0
100 125 150
0.2
0.4
0.6
0.8
5
10
15
VGS=10V
0V
0.1
0.01
0.2
0.4
0.6
0.8
75°C
125°C
0.01
1
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( ΙΙ )
1000
DRAIN CURRENT : ID (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
Ciss
10
Coss
Crss
1
0.01
1.2
1.0
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=25°C
f=1MHz
VGS=0V
Ta=−25°C
25°C
20
Ta=25°C
Pulsed
0.001
0.0
1.2
1.0
100
0.1
0
1
Fig.8 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
VGS=10V
Pulsed
CAPACITANCE : C (pF)
FORWARD TRANSFER ADMITTANCE : I Yfs I (S)
1
0.01
100mA
1
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
0.001
0.001
2
10
VGS=0V
Pulsed
CHANNEL TEMPERATURE : Tch (°C)
0.1
ID=200mA
3
GATE-SOURCE VOLTAGE : VGS (V)
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance
vs. Drain-Source Voltage
SWITCHING TIME : t (ns)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
VGS=10V
Pulsed
0
4
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
Resistance vs. Gate-Source Voltage
3.0
1.0
−50 −25
5
DRAIN CURRENT : I D (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
1.5
Ta=25°C
Pulsed
6
0
1.0
REVERSE DRAIN CURRENT : IDR (A)
1.0
0.01
7
VGS=4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
VGS=10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
10
tf
100
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
td(off)
10
td(on)
tr
1
1
10
100
1000
DRAIN CURRENT : ID (mA)
Fig.12 Switching Characteristics
3/4
RHU002N06
Transistors
zSwitching characteristics measurement circuit
Pulse width
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
td (on)
ton
Fig.13 Switching time test circuit
tr
td (off)
tf
toff
Fig.14 Switching time waveforms
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0