MBR30200CT(-1) - Sangdest Microelectronics (Nanjing) Co. Ltd.

MBR30200CT
MBRB30200CT
MBR30200CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
Green Products
MBR30200CT /MBRB30200CT /MBR30200CT-1
SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
MBR30200CT
TO-220AB
Case styles
MBRB30200CT
D2PAK
Mechanical Dimensions: In Inches / mm
MBR30200CT-1
TO-262
TO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR30200CT
MBRB30200CT
MBR30200CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
Green Products
Symbol
A
A1
A2
b
b1
c
c1
D
D1
E
E1
E2
e
H
L
L1
L2
L3
e
e1
e2
e3
D2PAK
Dimensions in
millimeters
Min. Typical Max.
4.55
0
2.59
0.71
0.36
1.17
8.55
6.40
10.01
7.6
9.98
14.6
2.00
1.17
0
4.70
0.10
2.69
0.81
1.27
0.38
1.27
8.70
0.61
1.37
8.85
10.16
10.31
10.08
2.54
15.1
2.30
1.27
10.18
0.25BSC
5°
4°
4°
4.85
0.25
2.89
0.96
15.6
2.70
1.40
2.20
8°
TO-262
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR30200CT
MBRB30200CT
MBR30200CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
MBR
B
30
200
CT/CT-1
SSG
YY
WW
L
MBR30200CT
= Device Type
= Package type
= Forward Current (30A)
= Reverse Voltage (200V)
= Configuration
= SSG
= Year
= Week
= Lot Number
MBRB30200CT
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
TO-220AB
(Pb-Free)
D²PAK
(Pb-Free)
MBR30200CT
MBRB30200CT
Shipping
50pcs / tube
800pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current(per
device)
Peak Repetitive Forward
Current(per leg)
Peak One Cycle
Non-Repetitive Surge Current
(per leg)
Symbol
VRWM
IF(AV)
IFRM
IFSM
Condition
50% duty cycle @TC = 133°C,
rectangular wave form
Rated VR square wave,
20KHz TC = 133°C
Max.
200
Units
V
30
A
20
A
8.3 ms, half Sine pulse
150
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR30200CT
MBRB30200CT
MBR30200CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current (per leg) *
Symbol
VF1
VF2
IR1
IR2
Junction Capacitance
(per leg)
Voltage Rate of Change
*
CT
dv/dt
Condition
@ 15 A, Pulse, TJ = 25 °C
@ 15 A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
-
Max.
0.90
0.70
Units
V
V
1.0
mA
6.0
mA
400
pF
10,000
V/μs
Specification
-55 to +150
-55 to +150
Units
°C
°C
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
Maximum Thermal
Resistance, Case to Heat
Sink
Maximum Thermal
Resistance, Case to Heat
Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
RθJC
DC operation
2.0
°C/W
RθJA
DC operation
50
°C/W
RθCS
Mounting surface, smooth and
greased
0.50
°C/W
2
g
wt
TO-220AB D2PAK TO-262
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
MBR30200CT
MBRB30200CT
MBR30200CT-1
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
Green Products
100
10
0
5
10
15
20
25
30
35
40
TJ=125℃
100
10
1
TJ=25℃
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
Junction Capacitance (PF)
TJ=25℃
Instantaneous Reverse Current (μA)
1000
1000
Fig.2-Typical Reverse Characteristics
100
TJ=125℃
10
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0769, Rev. -
MBR30200CT
MBRB30200CT
MBR30200CT-1
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •