MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Description M/A-COM Technology Solutions MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process optimized for high device uniformity and exceptionally low parasitics. The end result is a diode with an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. Notes: Applications The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 make them ideal for RF switch and phase shifter applications through millimeter wave frequencies. The diodes are designed for use in pulsed or CW applications, where single digit nS switching speed is required. The low capacitance of these diodes make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR. INCHES DIM MM MIN. MAX. MIN. MAX. A 0.0260 0.0270 0.6604 0.6858 B 0.0135 0.0145 0.3429 0.3683 C 0.0065 0.0075 0.1651 0.1905 D 0.0043 0.0053 0.1092 0.1346 Absolute Maximum Ratings TAMB = +25°C E 0.0068 0.0073 0.1727 0.1854 (unless otherwise specified) F 0.0182 0.0192 0.4623 0.4877 Parameter Reverse Voltage 1 1. Gold Pads 14µM thick. 2. Yellow areas indicate ohmic gold mounting pads. 3. Dimensions A thru F are identical for both devices Operating Temperature Storage Temperature Junction Temperature Dissipated Power (RF & DC ) C.W. Incident Power Mounting Temperature Absolute Maximum MA4AGP907 -50V MA4AGFCP910 -75V -55°C to +125°C -55°C to +150°C +175°C 50mW +23 dBm +280°C for 10 seconds ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Electrical Specifications @ TAMB = +25°C MA4AGP907 Parameter Symbol Conditions MA4AGFCP910 Units Typ. Max. Typ. Max. pF 0.025 0.030 0.018 0.021 MA4AGP907 -5V,1MHz Total Capacitance CT MA4AGFCP910 -10V,1MHz Total Capacitance 1 CT -5V, 10GHz pF 0.020 —— 0.018 0.021 Series Resistance RS +10mA, 1MHz Ω 5.2 7.0 —— —— Series Resistance 2 RS +10mA, 10GHz Ω 4.2 —— 5.2 6.0 Forward Voltage VF +10mA V 1.33 1.45 1.33 1.45 Reverse Leakage Current 3 IR μA —— 10 —— 10 MA4AGP907 VR = -50V MA4AGFCP910 VR = -75V Switching Speed 4 TRISE TFALL 10GHz nS 2 —— 2 —— Carrier Lifetime TL IF = 10mA / IREV = 6mA nS —— —— 4 —— Notes: 1) Capacitance is determined by measuring the isolation of a single series diode in a 50Ω transmission line at 10GHz. 2) Series resistance is determined by measuring the insertion loss of a single series diode in a 50Ω transmission line at 10GHz. 3) The max rated VR( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA 4) Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series mounted diode. Driver delay is not included. 2 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Typical RF Performance @ TAMB = +25°C MA4AGP907 Typical Insertion Loss vs. Frequency I. Loss @5mA I. Loss @15mA I. Loss @50mA Insertion (dB) Insertion Loss Loss (dB) 0.0 -0.2 -0.4 -0.6 -0.8 2 4 6 8 10 12 14 16 18 20 22 24 Frequency(GHz) (GHz) Frequency 26 28 30 32 34 36 38 40 M A4AGFCP910 Typical Insertion Loss vs. Frequency 0.0 5mA 10mA 15mA Loss (dB) Insertion Loss (dB) -0.2 15 m A 10 m A 5 mA -0.4 -0.6 -0.8 2 10 18 26 Frequency (GHz) Frequency (GHz) 34 42 50 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Typical RF Performance @ TAMB = +25°C MA4AGP907 Typical return Loss vs. Frequency ( Either Port ) R. Loss @5mA R. Loss @15mA R. Loss @50mA -20.0 -22.0 Return Loss (dB) -24.0 -26.0 -28.0 -30.0 -32.0 -34.0 -36.0 15 14 13 12 11 10 9 8 7 6 5 4 3 -40.0 2 -38.0 Frequency (GHz) M A4AGFCP910 Typical Return Loss vs. Frequency ( Either Port Direction ) 0 5mA 10mA 15mA Return Loss (dB) -5 ReturnLoss(dB) -10 15 m A 10 m A 5 mA -15 -20 -25 -30 -35 2 10 18 26 34 42 50 Frequency (GHz) Frequency (GHz) 4 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for Frequency (Hz) development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Typical RF Performance @ TAMB = +25°C MA4AGP907 Typical Isolation vs. Frequency Isolation @ -10V Isolation @ 0V Isolation @ -1V -5.0 Isolation (dB) -10.0 -15.0 -20.0 -25.0 -30.0 15 14 13 12 11 10 9 8 7 6 5 4 3 2 -35.0 Frequency (GHz) MA4AGFCP910 Typical Isolation vs Frequency 0 Isolation Loss (dB) -5 Isolation (dB) -10 -15 -20 0V -25 5V -30 -35 2 10 18 26 34 42 50 Frequency (GHz) Frequency (GHz) 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Device Installation Guidelines Cleanliness These devices should be handled in a clean environment. The chips are resistant to solvents and may cleaned using approved industry standard practices. Static Sensitivity Aluminum Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. These devices are rated Class 0, ( 0-199V ) per HBM MIL-STD-883, method 3015.7 [C = 100pF ±10%, R = 1.5kW ±1%]. Even though tested die pass 50V ESD, they must be handled in a static-free environment. General Handling The devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Die can be handled with plastic tweezers or picked and placed with a #27 tip vacuum pencil. Assembly Requirements using Electrically Conductive Silver Epoxy and Solder These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silk-screened circuits using electrically conductive silver epoxy, approximately 1-2 mils in thickness and cured at approximately 90°C to 150°C per manufacturer’s schedule. For extended cure times, > 30 minutes, temperatures must be below 200°C. Eutectic Die Attached Tin rich solders ( >30% Sn by weight ) are not recommended as they will scavenge the gold on the contact Pads exposing the tungsten metallization beneath and creating a poor solder connection. Indalloy or 80/20, Au/Sn type solders are acceptable. Maximum soldering temperature must be kept below 280°C for less than 10 seconds. Note: The MA4AGSBP907 which is a solder bumped version of the MA4AGP907, is also available. The datasheet can be viewed on the M/A-COM website at: http://www.macom.com/DataSheets/MA4AGSBP907.pdf Circuit Pad Layout Ordering Information Part Number Packaging MA4AGP907 Gel Pack MADP-001907-13050P Pocket Tape Part Number 0.013” 0.012” (2) PL Packaging MA4AGFCP910 Gel Pack MADP-000910-13050P Pocket Tape 0.008” (2) PL 6 • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.