MAAM71100 GaAs MMIC Power Amplifier 7.0 - 11.0 GHz Rev. V6 Features Die +31 dBm Typical Saturated Power 18 dB Typical Gain 30% Typical Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output Description The MAAM71100 is a GaAs MMIC two stage high efficiency power amplifier. The MAAM71100 is a fully monolithic design for operation in 50 Ω systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. Ordering Information 1 Schematic Part Number Package MAAM71100 Die A B C D E G2 G1 GND D1 G2 GND D2 1. Die quantity varies. RF IN RF OUT Absolute Maximum Ratings 2 Parameter Absolute Maximum VDD +10 V VGG -5 V Input Power +23 dBm Operating Channel Temperature +150°C Storage Temperature -65°C to +150°C G2 A B C D G1 GND D1 G2 GND D2 E 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAM71100 GaAs MMIC Power Amplifier 7.0 - 11.0 GHz Rev. V6 Electrical Specifications: TA = 25°C, Z0 = 50 Ω, VDD = +8 V, VGG = -1.2 V Typ Parameter Test Conditions Units Min. Typ. Max. Gain — dB 14 18 — Input VSWR Output VSWR — Ratio Ratio — — 2.0:1 4.5:1 — — Saturated Power Output Input Power = +18 dBm dBm — +31 — Output Power at 1 dB Gain Compression — dBm — +28 — Third Order Intercept — dBm — +38 — Reverse Isolation — dB — 30 — Bias Current IDSQ (No RF) IDD Pin = +18 dBm mA mA — — 520 750 — — Thermal Resistance — °C/W — 12 — Typical Performance Curves Linear Gain and Input Return Loss vs. Frequency 25 Output Power and Power added efficiency vs. Frequency @ Pin = +18 dBm -5 34 20 -10 32 15 -15 30 -20 28 -25 26 -30 24 60 S21 S11 10 5 0 6 7 8 9 10 11 12 Frequency (GHz) 50 Pout 40 30 PAE 20 10 6 7 8 9 10 11 12 Frequency (GHz) Output Power and Power added efficiency vs. Input Power @ 9 GHz 34 50 30 40 Pout 26 30 22 20 PAE (%) 18 10 14 0 0 4 8 12 16 20 Pin (dBm) 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAM71100 GaAs MMIC Power Amplifier 7.0 - 11.0 GHz Handling Procedures Permanent damage to the MAAM71100 may occur if the following precautions are not adhered to: Rev. V6 Outline Drawing A. Cleanliness - The MAAM71100 should be handled in a clean environment. DO NOT attempt to clean assembly after the MAAM71100 is installed. B. Static Sensitivity - All die handling equipment and personnel should comply with DOD-STD1686 Class I. C. Transients - Avoid instrument and power supply transients while bias is connected to the MAAM71100. Use shielded signal and bias cables to minimize inductive pick-up. D. General Handling - DO NOT touch the surface of the die. It is recommended that the MAAM71100 die be handled along the long side with a sharp pair of tweezers. Mounting The MAAM71100 is back-metallized with Pd/Ni/Au (100/1, 000/30,000Å) metallization. It is recommended that the die be mounted with Au/Sn eutectic preforms. The attachment surface should be clean and flat. A. An 80/20 preform is recommended with a work surface temperature of approximately 255°C and a tool temperature of 265°C. When hot 90/5 nitrogen/hydrogen gas is applied, solder temperature should be approximately 290°C. B. DO NOT expose the MAAM71100 to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Typical Bias Configuration 3,4,5 VDD (VD1, VD2) 1000 pF Min. RF OUT RF IN Bonding A. Ball or wedge bond with 1.0 mil diameter gold wire of 3.0 mil x 0.5 mil ribbon. Thermosonic bonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels necessary to achieve reliable bonds. B. Bonds should be started on the die and terminated on the package. C. Bonding pads are 4.0 x 4.0 mils minimum. VGG (VG1, VG2) 3. Nominal bias is obtained by first connecting -1.2 volts to pads VG1 and VG2 followed by connecting +8 volts to pads VD1 and VD2 (note sequence). 4. The recommended VDD range is +6 to +9 volts. 5. Optional on-chip resistor networks are used by connecting a nominal –5 volts to pad ―A‖ and connecting pad ―B‖, ―C‖, ―D‖, or ―E‖ to pad VG1; and VG2. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MAAM71100 GaAs MMIC Power Amplifier 7.0 - 11.0 GHz Rev. V6 M/A-COM Technology Solutions Inc. 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