NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Features
GaN on Si HEMT D-Mode Integrated Amplifier
Suitable for Linear and Saturated Applications
Wideband tuned from 20 - 2700 MHz
50 Ω Input Matched
28 V Operation
45% Drain Efficiency
100% RF Tested
Lead-Free 4 mm 24-lead PQFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Functional Schematic
Description
The NPA1008 is a wideband integrated GaN power
amplifier optimized for 20 - 2700 MHz operation.
This amplifier has been designed for saturated and
linear operation with output levels to 5 W (37 dBm)
assembled in a lead-free 4 x 4 mm 24-lead QFN
plastic package.
The NPA1008 is ideally suited for general purpose
narrowband to broadband applications in test and
measurement, defense communications, land
mobile radio and wireless infrastructure.
Package
NPA1008
Bulk Quantity
NPA1008-SMB
Sample Board
N/C
N/C
N/C
N/C
24
23
22
21
20
19
1
18 N/C
N/C
2
17 N/C
RFIN
3
RFIN
4
N/C
5
N/C
6
16 RFOUT / VD
Input
Match
15 RFOUT / VD
14 N/C
25
Paddle
13 N/C
7
8
9
10
11
12
N/C
N/C
N/C
N/C
N/C
N/C
Pin Designations
Pin No.
Pin Name
Function
1
VG
Gate - DC Bias
1
2
N/C
No Connection
3,4
RFIN
RF Input
1
5-14
N/C
No Connection
15,16
RFOUT / VD
RF Output / Drain
17-24
25
* Restrictions on Hazardous Substances, European Union Directive
2011/65/EU.
N/C
VG
Ordering Information
Part Number
N/C
1
N/C
Paddle
No Connection
2
Ground / Source
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
1
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
RF Electrical Specifications: TC = 25 °C , VDS = 28 V, IDQ = 88 mA
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Small Signal Gain
CW, 1900 MHz
GSS
-
15.6
-
dB
Gain
CW, POUT = 37 dBm, 1900 MHz
GP
10.5
12.0
-
dB
Saturated Output Power
CW, 1900 MHz
PSAT
-
38.9
-
dBm
Drain Efficiency
CW, 1900 MHz
ηSAT
44
47.0
-
%
Power Added Efficiency
CW, POUT = 37 dBm, 1900 MHz
PAE
-
44.7
-
%
Ruggedness
All phase angles
VSWR = 15:1, No Device Damage
DC Electrical Specifications: TC = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 100 V
IDLK
-
4
-
mA
Gate-Source Leakage Current
VGS = -8 V, VDS = 0 V
IGLK
-
2
-
mA
Gate Threshold Voltage
VDS = 28 V, ID = 4 mA
VT
-2.5
-1.5
-0.5
V
Gate Quiescent Voltage
VDS = 28 V, ID = 88 mA
VGSQ
-2.1
-1.2
-0.3
V
On Resistance
VDS = 2 V, ID = 45 mA
RON
-
1.2
-
Ω
Saturated Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID(SAT)
-
2.3
-
A
2
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Absolute Maximum Ratings3,4,5
3.
4.
5.
Parameter
Absolute Maximum
Drain Source Voltage, VDS
100 V
Gate Source Voltage, VGS
-10 to 3 V
Gate Current, IG
12 mA
Junction Temperature, TJ
+200°C
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
ESD Min. - Human Body Model (HBM)
+350 V
Exceeding any one or combination of these limits may cause permanent damage to this device.
MACOM does not recommend sustained operation near these survivability limits.
Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics6,7
6.
7.
Parameter
Test Conditions
Symbol
Typical
Units
Thermal Resistance
VDS = 28 V, TJ =200°C
ӨJC
12.1
°C/W
Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
The thermal resistance of the mounting configuration must be added to the device ӨJC , for proper TJ calculation during operation. The recommended via pattern, shown on page 4, on a 20 mil thick, 1 oz plated copper,
PCB adds an additional 4 °C/W to the typical value.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
L1
0.9 mH
VGS
VDS
C3
10 mF
C9
1000 pF
R1
470 W
L2
0.9 mH
L3
2.2 nH
RF
In
C1
2400 pF
C4
4.7 mF
NPA1008
L4
1.5 nH
C5
0.6 pF
C6
0.8 pF
C2
2400 pF
C7
0.5 pF
RF
Out
C8
0.6 pF
Description
Bias Sequencing
Parts measured on evaluation board (20-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Turning the device ON
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
Recommended Via Pattern (All dimensions shown as inches)
4
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Evaluation Board and Recommended Tuning Solution
20 - 2700 MHz Broadband Circuit
VGS
VDS
RFIN
RFOUT
Parts list
Reference
Value
Tolerance
Manufacturer
Part Number
C1, C2
2400 pF
-
Dielectric Labs, Inc.
C08BL242X-5UN-X0
C3
10 µF
10%
TDK
C2012XR1C106M085AC
C4
4.7 µF
10%
TDK
C5750X7R2A475K230KA
C5, C8
0.6 pF
0.1 pF
ATC
800A0R6BT250X
C6
0.8 pF
0.1 pF
ATC
800A0R8BT250X
C7
0.5 pF
0.1 pF
ATC
800A0R5BT250X
C9
1000 pF
10%
Kemet
C0805C102K1RACTU
R1
470 Ω
10%
Panasonic
ERJ-P03F4700V
L1, L2
0.9 µH
10%
Coilcraft
1008AF-901XJLC
L3
2.2 nH
±0.2 nH
AVX
L08052R2CEW
L4
1.5 nH
±0.2 nH
AVX
L06031R5CGS
PCB
Rogers RO4350, r=3.5, 0.020”
5
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For further information and support please visit:
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Broadband Circuit s-Parameters
20
0
15
-5
15
-5
10
-10
10
-10
5
s21 (dB)
0
5
-15
S21
S11
S22
0
0
-20
0
0.5
1
1.5
2
2.5
3
-20
0
0.5
1
Frequency (GHz)
3
0
Gain
Gain
13
50
12
40
11
30
10
20
1
1.5
2
Frequency (GHz)
2.5
3
IRL
20
Gain (dB)
60
-5
15
-10
10
-15
5
-20
0
-25
0
0.5
1
1.5
2
2.5
Frequency (GHz)
6
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3
Input Return Loss (dB)
PAE
Power Added Efficiency (%)
Gain (dB)
2.5
25
70
0.5
2
Performance vs. Input Return Loss at POUT = 37 dBm
15
0
1.5
Frequency (GHz)
Performance vs. Frequency at POUT = 37 dBm
14
-15
S21
S11
S22
s11, s22 (dB)
20
s11, s22 (dB)
s21 (dB)
Device s-parameters (Deembedded)
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Gain vs. Frequency at POUT = 37 dBm
Gain vs. Frequency
16
17
POUT = 24dBm
16
15
+25°C
14
POUT = 37dBm
+85°C
Gain (dB)
Gain (dB)
-40°C
15
POUT = 36dBm
14
13
12
13
12
11
10
11
9
8
10
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
Input Return Loss at POUT = 37 dBm vs. Frequency
Input Return Loss vs. Frequency
-6
-6
-40°C
Input Return Loss (dB)
Input Return Loss (dB)
-8
-10
-12
-14
POUT = 24dBm
-16
POUT = 36dBm
-18
+25°C
-8
+85°C
-10
-12
-14
POUT = 37dBm
-16
-20
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Frequency (GHz)
Power Added Efficiency at POUT = 37 dBm vs. Frequency
Power Added Efficiency vs. Frequency
60
60
50
55
Power Added Efficiency (%)
Power Added Efficiency (%)
-40°C
40
30
POUT = 24dBm
POUT = 36dBm
20
POUT = 37dBm
10
0
+85°C
50
45
40
35
30
0
7
+25°C
0.5
1
1.5
2
Frequency (GHz)
2.5
3
0
0.5
1
1.5
2
2.5
Frequency (GHz)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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3
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical Performance as measured in the Broadband Evaluation Board:
CW, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
Gain vs. POUT
18
18
16
16
14
14
12
Gain (dB)
Gain (dB)
Gain vs. POUT
100MHz
12
1900MHz
500MHz
10
1500MHz
10
900MHz
2400MHz
2700MHz
8
20
25
30
35
8.0
20
40
25
POUT (dBm)
-8
-10
-10
-12
-14
100MHz
500MHz
900MHz
-18
35
40
Input Return Loss vs. POUT
-8
Input Return Loss (dB)
Input Return Loss (dB)
Input Return Loss vs. POUT
-16
30
POUT (dBm)
-12
-14
1500MHz
-16
1900MHz
2400MHz
-18
2700MHz
-20
20
25
30
35
-20
20
40
25
POUT (dBm)
40
35
40
60
70
100MHz
60
500MHz
50
900MHz
Power Added Efficiency (%)
Power Added Efficiency (%)
80
8
35
Power Added Efficiency vs. POUT
Power Added Efficiency vs. POUT
40
30
20
10
0
10
30
POUT (dBm)
15
20
25
30
POUT (dBm)
35
40
45
50
1500MHz
1900MHz
40
2400MHz
2700MHz
30
20
10
0
20
25
30
POUT (dBm)
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Typical 2-Tone Performance as measured in the Broadband Evaluation Board
1 MHz Tone Spacing, Freq = 1900 MHz, VDS = 28 V, IDQ = 88 mA, TC = 25°C (unless noted)
2-Tone IMD vs. Output Power vs. IDQ
2-Tone Gain vs. Output Power vs. IDQ
-15
17
48mA
-20
88mA
-25
15
108mA
128mA
-30
Gain (dB)
IMD3 (dBc)
16
68mA
-35
14
13
-40
12
-45
11
-50
0.01
0.1
1
48mA
68mA
88mA
108mA
128mA
10
0.01
10
0.1
POUT (W-PEP)
10
2-Tone IMD vs. Tone Spacing (POUT = 37 dBm-PEP)
2-Tone IMD vs. Output Power
-10
-10
-IMD3
-IMD5
-20
+IMD5
IMD (dBc)
-IMD7
-30
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
-15
+IMD3
-20
IMD (dBc)
1
POUT (W-PEP)
+IMD7
-40
-25
-30
-35
-40
-50
-45
-60
0.01
0.1
-50
0.1
10
10
1
POUT (W-PEP)
1
10
Tone Spacing (MHz)
Quiescent VGS vs. Temperature
-0.70
-0.80
-0.90
VGSQ (V)
-1.0
-1.1
-1.2
48mA
-1.3
88mA
-1.4
148mA
-1.5
-50
-25
0
25
50
75
100
o
Temperature ( C)
9
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100
NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
Lead-Free 4 mm 24-Lead QFN Plastic Package †
All dimensions shown as inches [millimeters]
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Tin
10
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NPA1008
GaN Wideband Power Amplifier, 28 V, 5 W
20 - 2700 MHz
Rev. V3
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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