NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2 GHz 48 V Operation 20 dB Gain @ 900 MHz 60 % Drain Efficiency @ 900 MHz 100 % RF Tested Standard plastic package with bolt down flange RoHS* Compliant and 260°C reflow compatible Description The NPT2022 GaN HEMT is a wideband transistor optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard plastic package. Functional Schematic The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. 2 1 Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. 3 Pin Configuration Ordering Information * Part Number Package NPT2022 Bulk Quantity NPT2022-SMBPPR Sample Board Pin No. Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Pad 1 Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 600 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 900 MHz GSS - 21 - dB Saturated Output Power CW, 900 MHz PSAT - 50.5 - dBm Drain Efficiency at Saturation CW, 900 MHz SAT - 62 - % Power Gain 900 MHz, POUT = 100 W GP 19 20 - dB Drain Efficiency 900 MHz, POUT = 100 W 56 58 - % Ruggedness: Output Mismatch All phase angles VSWR = 10:1, No Device Damage DC Electrical Characteristics: TC = 25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 160 V IDLK - - 24 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK - - 12 mA Gate Threshold Voltage VDS = 48 V, ID = 24 mA VT -2.5 -1.6 -0.5 V Gate Quiescent Voltage VDS = 48 V, ID = 600 mA VGSQ -2.1 -1.4 -0.3 V On Resistance VDS = 2 V, ID = 180 mA RON - 0.2 - Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID,MAX - 14 - A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Absolute Maximum Ratings2,3,4 Parameter Absolute Maximum Drain Source Voltage, VDS 160 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 48 mA Junction Temperature, TJ +200°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. MACOM does not recommend sustained operation near these survivability limits. 4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours. Thermal Characteristics5 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 48 V, TJ = 200°C RJC 1.3 °C/W 5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1B devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Load-Pull Performance: VDS = 48 V, IDQ = 600 mA, TC = 25°C Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance Frequency (MHz) ZS () ZL () PSAT (W) GSS (dB) Drain Efficiency @ PSAT (%) 500 1.3 + j0.8 5.8 + j2.5 152 26 71 900 1.1 - j1.3 5.0 + j2.8 139 22 70 1800 1.3 - j5.7 3.2 - j1.4 133 17 66 2000 1.4 - j6.3 2.3 - j2.3 119 16 66 Impedance Reference ZS and ZL vs. Frequency ZL ZS Gain vs. Output Power Drain Efficiency vs. Output Power 28 80 26 70 Drain Efficiency (%) Gain (dB) 24 22 500 MHz 900 MHz 1800 MHz 2000 MHz 20 18 16 50 500 MHz 900 MHz 1800 MHz 2000 MHz 40 30 20 10 14 25 4 60 30 35 40 45 Output Power (dBm) 50 55 0 25 30 35 40 45 50 Output Power (dBm) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 55 NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 900 MHz Narrowband Circuit VGS VDS C1 1.0 mF C2 0.1 mF C3 0.01 mF C8 1000pF C4 1000 pF L1 19.4 nH C7 0.01 mF C6 0.1 mF C5 1.0 mF C9 10 pF C10 33 pF R1 10 L2 44 nH C14 0.8 pF RFOUT NPT2022 RFIN C11 15 pF C13 18 pF C15 8.2 pF C12 6.8 pF Description Bias Sequencing Parts measured on evaluation board (30-mil thick RO4350). Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (48 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 900 MHz Narrowband Circuit Parts list 6 Reference Value Tolerance Manufacturer Part Number C1, C5 1.0 µF 10% AVX 12101C105KAT2A C2, C6 0.1 µF 10% Kemet C1206C104K1RACTU C3, C7 0.01 µF 10% AVX 12061C103KAT2A C4, C8 1000 pF 10% Kemet C0805C102K1RACTU C9 10 pF 5% ATC ATC800B100J C10 33 pF 10% ATC ATC800B330K C11 15 pF 10% ATC ATC800B150K C12 6.8 pF 0.1 pF ATC ATC800B6R8B C13 18 pF 10% ATC ATC800B180K C14 0.8 pF 0.1 pF ATC ATC800B0R8B C15 8.2 pF 0.1 pF ATC ATC800B8R2B R1 10 Ω 1% Panasonic ERJ-2RKF10R0X L1 19.4 nH 5% Coilcraft 0806SQ-19NJLB L2 ~44 nH 10% 20 AWG Cu Wire 4 turn, 5mm ID PCB Rogers RO4350, r=3.5, 30 mil M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Typical performance as measured in the 900 MHz evaluation board: CW, VDS = 48 V, IDQ = 600 mA (unless noted) Gain vs. Output Power over Temperature Drain Efficiency vs. Output Power over Temperature 22.0 70 21.5 60 Drain Efficiency (%) Gain (dB) 21.0 20.5 20.0 19.5 +25°C -40°C +85°C 19.0 35 50 40 30 20 10 18.5 18.0 30 +25°C -40°C +85°C 40 45 50 0 30 55 35 40 45 50 Output Power (dBm) Output Power (dBm) Quiescent VGS vs. Temperature -1.20 -1.25 300 mA 600 mA 900 mA VGSQ (V) -1.30 -1.35 -1.40 -1.45 -1.50 -1.55 -50 -25 0 25 50 75 100 Temperature (°C) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 55 NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Typical 2-Tone performance as measured in the 900 MHz evaluation board: 1 MHz Tone Spacing, VDS = 48 V, IDQ = 600 mA, TC = 25°C (unless noted) 2-Tone Gain vs. Output Power vs. Quiescent Current 2-Tone IMD3 vs. Output Power vs. Quiescent Current -15 22.5 450mA 600mA 750mA 900mA 1050mA IMD (dBc) -25 -30 22.0 21.5 Gain (dB) -20 -35 -40 21.0 20.5 450mA 600mA 750mA 900mA 1050mA 20.0 -45 19.5 -50 1 10 1 100 10 100 POUT (W-PEP) POUT (W-PEP) 2-Tone IMD vs. Output Power -15 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -20 IMD (dBc) -25 -30 -35 -40 -45 -50 -55 1 10 100 500 POUT (W-PEP) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 500 NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 130 - 940 MHz Broadband Circuit Parts list Reference C1 C2, C7 C3, C6 C4, C5 C8 C9 C10 C11 C12 C13 C14 C15 C16, C17 C18 C19 C20 C21 R1 R2 R3 R4, R5 F1 F2, F3 L1 L2, L4 L3, L5 9 Value 150 µF 1.0 µF 0.1 µF 0.01 µF 270 µF 18 pF 1000 pF 1.5 pF 5.6 pF 15 pF 220 pF 12 pF 82 pF 4.7 pF 2.4 pF 3.9 pF 1.0 pF 49.9 Ω 470 Ω 0.33 Ω 24.9 Ω Material 73 4:1 Transformer 25 nH 8.0 nH 5.0 nH PCB Tolerance 20% 10% 10% 10% 20% 5% 5% 0.1 pF 0.1 pF 5% 5% 2% 10% 0.1 pF 0.1 pF 0.1 pF 0.1 pF 1% 1% 1% 1% 5% 5% 5% Manufacturer Nichicon AVX Kemet AVX United Chemi-Con ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC ATC Panasonic Panasonic Panasonic Panasonic Fair-Rite Anaren Coilcraft Coilcraft Coilcraft Part Number UPW1C151MED 1210C105KAT2A C1206C104K1RACTU 12061C103KAT2A ELXY 630ELL271MK25S ATC100B180J ATC100B102J ATC100B1R5B ATC100B5R6B ATC100B150J ATC600F221J ATC600F120F ATC100B820K ATC100B4R7B ATC100B2R4B ATC100B3R9B ATC100B1R0B ERJ-6ENF49R9V ERJ-1TNF4700U ERJ-6RQFR33V ERJ-1TNF24R9U 2673000801 XMT031B5012 0908SQ-25NJL A03TJL A02TJL Rogers RO4350, r=3.5, 30 mil M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 Evaluation Board and Recommended Tuning Solution 130 - 940 MHz Broadband Circuit F1 VGS VDS C3 0.1 mF C2 1.0 mF C1 150 mF C10 1000 pF C4 0.01 mF L1 25 nH R1 49.9 L3 5.0 nH RF In C9 18 pF R2 470 C5 0.01 mF C14 220 pF C13 15 pF C19 2.4 pF C18 4.7 pF C17 82 pF C15 12 pF L4 8.0 nH F3 4:1 C16 82 pF NPT2022 C12 5.6 pF C11 1.5 pF C7 1.0 mF C6 0.1 mF L2 8 nH R4 24.9 F2 4:1 C8 270 mF R3 0.33 L5 5.0 nH C20 3.9 pF C21 1.0 pF RF Out R5 24.9 Performance vs. Frequency at POUT = 49 dBm Performance vs. Frequency at POUT= PSAT 30 Drain Eff Psat 65 20 60 15 55 10 50 5 0 200 400 600 800 30 65 25 60 20 55 15 50 Gain 10 45 1,000 45 Drain Eff 5 0 200 Frequency (MHz) 400 600 800 Drain Efficiency (%) Gain (dB) 25 PSAT (dBm), Drain Efficiency (%) Gain Gain (dB) 70 40 1,000 Frequency (MHz) Small Signal s-parameters vs. Frequency Performance vs. Output Power (f = 760 MHz) 60 14.5 35 0 13.5 40 Gain 13.0 30 Drain Eff 12.5 20 12.0 10 11.5 25 30 35 40 POUT (dBm) 45 50 0 55 30 Magnitude S21 (dB) 50 -5 S11 S22 25 -10 20 -15 15 -20 10 -25 5 0 200 400 600 800 -30 1,000 Frequency (MHz) 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Magnitude S11, S22 (dB) 14.0 Drain Efficiency (%) Gain (dB) S21 NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Rev. V1 TO272-2 Plastic Package† All dimensions shown as inches [millimeters]. † Meets JEDEC moisture sensitivity level 3 requirements. Plating is Matte Sn. 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support