NPT2022

NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Features
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GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2 GHz
48 V Operation
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
Standard plastic package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2022 GaN HEMT is a wideband transistor
optimized for DC - 2 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 100 W (50 dBm) in an
industry standard plastic package.
Functional Schematic
The NPT2022 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
2
1
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
3
Pin Configuration
Ordering Information
*
Part Number
Package
NPT2022
Bulk Quantity
NPT2022-SMBPPR
Sample Board
Pin No.
Pin Name
Function
1
RFIN / VG
RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Pad
1
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 600 mA
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Small Signal Gain
CW, 900 MHz
GSS
-
21
-
dB
Saturated Output Power
CW, 900 MHz
PSAT
-
50.5
-
dBm
Drain Efficiency at Saturation
CW, 900 MHz
SAT
-
62
-
%
Power Gain
900 MHz, POUT = 100 W
GP
19
20
-
dB
Drain Efficiency
900 MHz, POUT = 100 W

56
58
-
%
Ruggedness: Output Mismatch
All phase angles

VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 160 V
IDLK
-
-
24
mA
Gate-Source Leakage Current
VGS = -8 V, VDS = 0 V
IGLK
-
-
12
mA
Gate Threshold Voltage
VDS = 48 V, ID = 24 mA
VT
-2.5
-1.6
-0.5
V
Gate Quiescent Voltage
VDS = 48 V, ID = 600 mA
VGSQ
-2.1
-1.4
-0.3
V
On Resistance
VDS = 2 V, ID = 180 mA
RON
-
0.2
-

Maximum Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID,MAX
-
14
-
A
2
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NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Absolute Maximum Ratings2,3,4
Parameter
Absolute Maximum
Drain Source Voltage, VDS
160 V
Gate Source Voltage, VGS
-10 to 3 V
Gate Current, IG
48 mA
Junction Temperature, TJ
+200°C
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics5
Parameter
Test Conditions
Symbol
Typical
Units
Thermal Resistance
VDS = 48 V, TJ = 200°C
RJC
1.3
°C/W
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Load-Pull Performance: VDS = 48 V, IDQ = 600 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
ZS
()
ZL
()
PSAT
(W)
GSS
(dB)
Drain Efficiency
@ PSAT (%)
500
1.3 + j0.8
5.8 + j2.5
152
26
71
900
1.1 - j1.3
5.0 + j2.8
139
22
70
1800
1.3 - j5.7
3.2 - j1.4
133
17
66
2000
1.4 - j6.3
2.3 - j2.3
119
16
66
Impedance Reference
ZS and ZL vs. Frequency
ZL
ZS
Gain vs. Output Power
Drain Efficiency vs. Output Power
28
80
26
70
Drain Efficiency (%)
Gain (dB)
24
22
500 MHz
900 MHz
1800 MHz
2000 MHz
20
18
16
50
500 MHz
900 MHz
1800 MHz
2000 MHz
40
30
20
10
14
25
4
60
30
35
40
45
Output Power (dBm)
50
55
0
25
30
35
40
45
50
Output Power (dBm)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
55
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
VGS
VDS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C8
1000pF
C4
1000 pF
L1
19.4 nH
C7
0.01 mF
C6
0.1 mF
C5
1.0 mF
C9
10 pF
C10
33 pF
R1
10 
L2
44 nH
C14
0.8 pF
RFOUT
NPT2022
RFIN
C11
15 pF
C13
18 pF
C15
8.2 pF
C12
6.8 pF
Description
Bias Sequencing
Parts measured on evaluation board (30-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
Parts list
6
Reference
Value
Tolerance
Manufacturer
Part Number
C1, C5
1.0 µF
10%
AVX
12101C105KAT2A
C2, C6
0.1 µF
10%
Kemet
C1206C104K1RACTU
C3, C7
0.01 µF
10%
AVX
12061C103KAT2A
C4, C8
1000 pF
10%
Kemet
C0805C102K1RACTU
C9
10 pF
5%
ATC
ATC800B100J
C10
33 pF
10%
ATC
ATC800B330K
C11
15 pF
10%
ATC
ATC800B150K
C12
6.8 pF
0.1 pF
ATC
ATC800B6R8B
C13
18 pF
10%
ATC
ATC800B180K
C14
0.8 pF
0.1 pF
ATC
ATC800B0R8B
C15
8.2 pF
0.1 pF
ATC
ATC800B8R2B
R1
10 Ω
1%
Panasonic
ERJ-2RKF10R0X
L1
19.4 nH
5%
Coilcraft
0806SQ-19NJLB
L2
~44 nH
10%
20 AWG Cu Wire
4 turn, 5mm ID
PCB
Rogers RO4350, r=3.5, 30 mil
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Typical performance as measured in the 900 MHz evaluation board:
CW, VDS = 48 V, IDQ = 600 mA (unless noted)
Gain vs. Output Power over Temperature
Drain Efficiency vs. Output Power over Temperature
22.0
70
21.5
60
Drain Efficiency (%)
Gain (dB)
21.0
20.5
20.0
19.5
+25°C
-40°C
+85°C
19.0
35
50
40
30
20
10
18.5
18.0
30
+25°C
-40°C
+85°C
40
45
50
0
30
55
35
40
45
50
Output Power (dBm)
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.20
-1.25
300 mA
600 mA
900 mA
VGSQ (V)
-1.30
-1.35
-1.40
-1.45
-1.50
-1.55
-50
-25
0
25
50
75
100
Temperature (°C)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
55
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Typical 2-Tone performance as measured in the 900 MHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 600 mA, TC = 25°C (unless noted)
2-Tone Gain vs. Output Power vs. Quiescent Current
2-Tone IMD3 vs. Output Power vs. Quiescent Current
-15
22.5
450mA
600mA
750mA
900mA
1050mA
IMD (dBc)
-25
-30
22.0
21.5
Gain (dB)
-20
-35
-40
21.0
20.5
450mA
600mA
750mA
900mA
1050mA
20.0
-45
19.5
-50
1
10
1
100
10
100
POUT (W-PEP)
POUT (W-PEP)
2-Tone IMD vs. Output Power
-15
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
-20
IMD (dBc)
-25
-30
-35
-40
-45
-50
-55
1
10
100
500
POUT (W-PEP)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
500
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
130 - 940 MHz Broadband Circuit
Parts list
Reference
C1
C2, C7
C3, C6
C4, C5
C8
C9
C10
C11
C12
C13
C14
C15
C16, C17
C18
C19
C20
C21
R1
R2
R3
R4, R5
F1
F2, F3
L1
L2, L4
L3, L5
9
Value
150 µF
1.0 µF
0.1 µF
0.01 µF
270 µF
18 pF
1000 pF
1.5 pF
5.6 pF
15 pF
220 pF
12 pF
82 pF
4.7 pF
2.4 pF
3.9 pF
1.0 pF
49.9 Ω
470 Ω
0.33 Ω
24.9 Ω
Material 73
4:1 Transformer
25 nH
8.0 nH
5.0 nH
PCB
Tolerance
20%
10%
10%
10%
20%
5%
5%
0.1 pF
0.1 pF
5%
5%
2%
10%
0.1 pF
0.1 pF
0.1 pF
0.1 pF
1%
1%
1%
1%
5%
5%
5%
Manufacturer
Nichicon
AVX
Kemet
AVX
United Chemi-Con
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Panasonic
Panasonic
Panasonic
Panasonic
Fair-Rite
Anaren
Coilcraft
Coilcraft
Coilcraft
Part Number
UPW1C151MED
1210C105KAT2A
C1206C104K1RACTU
12061C103KAT2A
ELXY 630ELL271MK25S
ATC100B180J
ATC100B102J
ATC100B1R5B
ATC100B5R6B
ATC100B150J
ATC600F221J
ATC600F120F
ATC100B820K
ATC100B4R7B
ATC100B2R4B
ATC100B3R9B
ATC100B1R0B
ERJ-6ENF49R9V
ERJ-1TNF4700U
ERJ-6RQFR33V
ERJ-1TNF24R9U
2673000801
XMT031B5012
0908SQ-25NJL
A03TJL
A02TJL
Rogers RO4350, r=3.5, 30 mil
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
130 - 940 MHz Broadband Circuit
F1
VGS
VDS
C3
0.1 mF
C2
1.0 mF
C1
150 mF
C10
1000 pF
C4
0.01 mF
L1
25 nH
R1
49.9 
L3
5.0 nH
RF
In
C9
18 pF
R2
470 
C5
0.01 mF
C14
220 pF
C13
15 pF
C19
2.4 pF
C18
4.7 pF
C17
82 pF
C15
12 pF
L4
8.0 nH
F3
4:1
C16
82 pF
NPT2022
C12
5.6 pF
C11
1.5 pF
C7
1.0 mF
C6
0.1 mF
L2
8 nH
R4
24.9 
F2
4:1
C8
270 mF
R3
0.33 
L5
5.0 nH
C20
3.9 pF
C21
1.0 pF
RF
Out
R5
24.9 
Performance vs. Frequency at POUT = 49 dBm
Performance vs. Frequency at POUT= PSAT
30
Drain Eff
Psat
65
20
60
15
55
10
50
5
0
200
400
600
800
30
65
25
60
20
55
15
50
Gain
10
45
1,000
45
Drain Eff
5
0
200
Frequency (MHz)
400
600
800
Drain Efficiency (%)
Gain (dB)
25
PSAT (dBm), Drain Efficiency (%)
Gain
Gain (dB)
70
40
1,000
Frequency (MHz)
Small Signal s-parameters vs. Frequency
Performance vs. Output Power (f = 760 MHz)
60
14.5
35
0
13.5
40
Gain
13.0
30
Drain Eff
12.5
20
12.0
10
11.5
25
30
35
40
POUT (dBm)
45
50
0
55
30
Magnitude S21 (dB)
50
-5
S11
S22
25
-10
20
-15
15
-20
10
-25
5
0
200
400
600
800
-30
1,000
Frequency (MHz)
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Magnitude S11, S22 (dB)
14.0
Drain Efficiency (%)
Gain (dB)
S21
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Rev. V1
TO272-2 Plastic Package†
All dimensions shown as inches [millimeters].
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support