MA4BN1840-1

MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Features
 Broad Bandwidth Specified 18 to 40 GHz
 Usable 10 GHz to 50 GHz
 Extremely Low Insertion Loss
 High RF-DC Isolation
 Rugged, Fully Monolithic Glass Encapsulation
 J1 & J2 Matched to 50 Ω
 RoHS* Compliant and 260ºC Reflow Compatible
Description
The MA4BN1840-1 is a fully monolithic broadband
bias
network
utilizing
MACOM’s
HMICTM
(Heterolithic Microwave Integrated Circuit) process,
US Patent 5,268,310. This process allows the
formation of silicon vias by imbedding them in low
loss, low dispersion glass along with high Q spiral
inductors and MIM capacitors. The close proximity
between elements and the combination of silicon
and glass gives this HMIC device low loss and high
performance with exceptional repeatability through
millimeter frequencies.
Yellow areas denote bond pads
Large bond pads facilitate the use of low inductance
ribbon bonds, while the gold backside metallization
provides the RF and DC ground. This allows for
manual or automatic die attach via electrically
conductive silver epoxy or RoHS compliant solders.
The MA4BN1840-1 bias network is ideally suited for
the DC biasing of PIN diode control circuits. It
functions as an RF-DC de-coupling network as well
as the DC return. The device can also be used as a
bi-directional re-active coupler for Schottky detector
circuits. DC currents up to 150 mA and DC voltages
up to 50 V may be used.
Schematic
J1 (IN)
J2 (OUT)
RF & D.C.
Ground
D.C. Bias
1
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Electrical Specifications: Freq. = 18 - 40 GHz, TA = +25oC on Wafer Measurements
Parameter
Minimum
Typical
Maximum
Units
Insertion Loss
—
0.15
0.2
dB
RF - DC Isolation
30
35
—
dB
Input Return Loss
15
17
—
dB
Output Return Loss
15
17
—
dB
Maximum Operating Conditions @ +25°C
(Unless otherwise noted)
Parameter
Value
Operating Temperature
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Die Attach Temperature
320°C for 20 sec
RF CW Incident Power
10 Watts
DC Bias Current
+/- 150 mA
DC Bias Voltage
+/- 50 V
MILLIMETERS
DIM.
MILS
MIN.
MAX.
MIN.
MAX.
A
1.475
1.575
58
62
B
1.075
1.175
43
46
C
0.800
0.820
31.5
32.3
D
0.400
0.420
15.7
16.5
E
0.810
0.830
31.9
32.7
F
0.520
0.550
20.5
21.7
RF Bond Pads 0.150 X 0.125 Ref.
5.90 X 4.92
DC Bond Pad 0.150 X 0.125 Ref.
5.90 X 4.92
Thickness
0.005
Ref.
0.125
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Ref.
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Typical RF Performance Curves @ TA = +25°C
0.0
0
-0.1
-5
-0.2
-10
-15
-0.3
-0.4
Loss ( dB )
-20
Loss (dB) -25
J1-J2 INSERTION LOSS
-0.5
-0.6
-30
-0.7
-35
-0.8
-0.9
-40
-45
-1.0
-50
10
15
20
25
30
35
40
J2-J1 OUTPUT RETURN LOSS
45
50
10
15
20
25
0
J1-J2 INPUT RETURN LOSS
-10
-15
-20
Loss ( dB )
-25
-30
-35
-40
-45
-50
10
15
20
25
30
Freq. GHz
35
35
40
40
45
0
-5
-10
-15
-20
-25
-30
Loss (dB) -35
-40
-45
-50
-55
-60
-65
-70
50
50
45
50
RF-DC ISOLATION
10
15
20
25
30
35
40
Freq. GHz
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
45
Freq. GHz
Freq. GHz
-5
30
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Assembly Considerations
Cleanliness
These chips should be handled in a clean environment.
Electro-Static Sensitivity
The MA4BN1840-1 bias network is ESD, Class 1B sensitive. The proper ESD handling procedures should be
used.
Wire Bonding
Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or ball bonding with 0.001” diameter gold wire is
recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy
should be adjusted to the minimum required. RF bonds should be as short as possible for best performance.
Mounting
These chips have Ti-Pt-Au topside and backside metal. They can be die mounted with either a gold-tin eutectic
solder preform , RoHS compliant solders or electrically conductive silver epoxy. Mounting surface must be clean
of organic contaminants and flat for best adhesion results.
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip
temperature of 265°C. When hot gas is applied, the tool tip temperature should be 290°C. The chip should not be
exposed to temperatures greater than 320°C for more than 20 seconds. No more than three seconds should be
required for attachment.
Electrically Conductive Epoxy Die Attachment
Assembly should be preheated to 125-150°C. A minimum amount of epoxy should be used, approximately 1 to 2
mils thickness for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the
perimeter of the chip after placement. Cure epoxy per manufacturer’s time-temperature schedule. Typically 150°C
for 1 hour.
RoHS Soldering
See application note M538 page 7 on www.macomtech.com for the recommended heating profile.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Operation of the MA4BN1840-1
Broadband operation of the MA4BN1840-1 bias network is accomplished by applying DC bias to the DC port on
the die. The outputs, J1 and/or J2 provide the DC bias to the corresponding, connected, microwave device. An
external blocking capacitor is required if the current is to be directed to only one RF output port such as in a
bias T configuration. This device can also be used as a ground return when the DC Bias Port is attached to the
RF and DC ground. The small DC resistance (< 1 Ω) of the DC Bias Port allows up to +/- 150 mA @ +/- 50 V to
be delivered while still maintaining >35 dB RF to DC isolation.
MA4BN1840-1 Schematic
J1 (IN)
J2 (OUT)
D.C.
Ground
D.C. Bias
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Biasing Applications using the MA4BN1840-1
Bias Circuit for Shunt Diode Switch
D.C. Bias
OUT
IN
J1
External
D.C Block
J2
External
D.C Block
PIN Diodes
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Biasing Applications using the MA4BN1840-1
Bias Circuit for Series Diode Switch
D.C. Bias
D.C. Bias
D.C. Return
IN
OUT
J1
External
D.C Block
J1
J2
PIN Diodes
J2
External
D.C Block
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4BN1840-1
Monolithic HMIC™
Integrated Bias Network
Rev. V4
Biasing Applications using the MA4BN1840-1
Bias Circuit for Series - Shunt Diode Switch
D.C. Bias
D.C. Bias
D.C. Return
IN
OUT
J1
External
D.C Block
J1
J2
PIN Diodes
J2
External
D.C Block
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support