MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Features Broad Bandwidth Specified 18 to 40 GHz Usable 10 GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation J1 & J2 Matched to 50 Ω RoHS* Compliant and 260ºC Reflow Compatible Description The MA4BN1840-1 is a fully monolithic broadband bias network utilizing MACOM’s HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity between elements and the combination of silicon and glass gives this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies. Yellow areas denote bond pads Large bond pads facilitate the use of low inductance ribbon bonds, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders. The MA4BN1840-1 bias network is ideally suited for the DC biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the DC return. The device can also be used as a bi-directional re-active coupler for Schottky detector circuits. DC currents up to 150 mA and DC voltages up to 50 V may be used. Schematic J1 (IN) J2 (OUT) RF & D.C. Ground D.C. Bias 1 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Electrical Specifications: Freq. = 18 - 40 GHz, TA = +25oC on Wafer Measurements Parameter Minimum Typical Maximum Units Insertion Loss — 0.15 0.2 dB RF - DC Isolation 30 35 — dB Input Return Loss 15 17 — dB Output Return Loss 15 17 — dB Maximum Operating Conditions @ +25°C (Unless otherwise noted) Parameter Value Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C Die Attach Temperature 320°C for 20 sec RF CW Incident Power 10 Watts DC Bias Current +/- 150 mA DC Bias Voltage +/- 50 V MILLIMETERS DIM. MILS MIN. MAX. MIN. MAX. A 1.475 1.575 58 62 B 1.075 1.175 43 46 C 0.800 0.820 31.5 32.3 D 0.400 0.420 15.7 16.5 E 0.810 0.830 31.9 32.7 F 0.520 0.550 20.5 21.7 RF Bond Pads 0.150 X 0.125 Ref. 5.90 X 4.92 DC Bond Pad 0.150 X 0.125 Ref. 5.90 X 4.92 Thickness 0.005 Ref. 0.125 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Ref. MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Typical RF Performance Curves @ TA = +25°C 0.0 0 -0.1 -5 -0.2 -10 -15 -0.3 -0.4 Loss ( dB ) -20 Loss (dB) -25 J1-J2 INSERTION LOSS -0.5 -0.6 -30 -0.7 -35 -0.8 -0.9 -40 -45 -1.0 -50 10 15 20 25 30 35 40 J2-J1 OUTPUT RETURN LOSS 45 50 10 15 20 25 0 J1-J2 INPUT RETURN LOSS -10 -15 -20 Loss ( dB ) -25 -30 -35 -40 -45 -50 10 15 20 25 30 Freq. GHz 35 35 40 40 45 0 -5 -10 -15 -20 -25 -30 Loss (dB) -35 -40 -45 -50 -55 -60 -65 -70 50 50 45 50 RF-DC ISOLATION 10 15 20 25 30 35 40 Freq. GHz 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 45 Freq. GHz Freq. GHz -5 30 MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Assembly Considerations Cleanliness These chips should be handled in a clean environment. Electro-Static Sensitivity The MA4BN1840-1 bias network is ESD, Class 1B sensitive. The proper ESD handling procedures should be used. Wire Bonding Thermosonic wedge wire bonding using 0.003” x 0.00025” ribbon or ball bonding with 0.001” diameter gold wire is recommended. A stage temperature of 150°C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible for best performance. Mounting These chips have Ti-Pt-Au topside and backside metal. They can be die mounted with either a gold-tin eutectic solder preform , RoHS compliant solders or electrically conductive silver epoxy. Mounting surface must be clean of organic contaminants and flat for best adhesion results. Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255°C and a tool tip temperature of 265°C. When hot gas is applied, the tool tip temperature should be 290°C. The chip should not be exposed to temperatures greater than 320°C for more than 20 seconds. No more than three seconds should be required for attachment. Electrically Conductive Epoxy Die Attachment Assembly should be preheated to 125-150°C. A minimum amount of epoxy should be used, approximately 1 to 2 mils thickness for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer’s time-temperature schedule. Typically 150°C for 1 hour. RoHS Soldering See application note M538 page 7 on www.macomtech.com for the recommended heating profile. 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Operation of the MA4BN1840-1 Broadband operation of the MA4BN1840-1 bias network is accomplished by applying DC bias to the DC port on the die. The outputs, J1 and/or J2 provide the DC bias to the corresponding, connected, microwave device. An external blocking capacitor is required if the current is to be directed to only one RF output port such as in a bias T configuration. This device can also be used as a ground return when the DC Bias Port is attached to the RF and DC ground. The small DC resistance (< 1 Ω) of the DC Bias Port allows up to +/- 150 mA @ +/- 50 V to be delivered while still maintaining >35 dB RF to DC isolation. MA4BN1840-1 Schematic J1 (IN) J2 (OUT) D.C. Ground D.C. Bias 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Biasing Applications using the MA4BN1840-1 Bias Circuit for Shunt Diode Switch D.C. Bias OUT IN J1 External D.C Block J2 External D.C Block PIN Diodes 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Biasing Applications using the MA4BN1840-1 Bias Circuit for Series Diode Switch D.C. Bias D.C. Bias D.C. Return IN OUT J1 External D.C Block J1 J2 PIN Diodes J2 External D.C Block 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MA4BN1840-1 Monolithic HMIC™ Integrated Bias Network Rev. V4 Biasing Applications using the MA4BN1840-1 Bias Circuit for Series - Shunt Diode Switch D.C. Bias D.C. Bias D.C. Return IN OUT J1 External D.C Block J1 J2 PIN Diodes J2 External D.C Block 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support