TetraFET D1213UK METAL GATE RF SILICON FET MECHANICAL DATA E B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6W – 7.2V – 500MHz SINGLE ENDED C D 8 1 2 7 A 3 6 F 5 4 Q O N M J K L I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN PIN 2 Drain PIN 6 Gate • SUITABLE FOR BROAD BAND APPLICATIONS PIN 3 Drain PIN 7 Gate PIN 4 Source PIN 8 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 • LOW Crss Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 58W 40V ±20V 20A –65 to 150°C 200°C Prelim. 7/99 D1213UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 12.5V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 7 V gfs Forward Transconductance* VDS = 10V ID = 2A 1.6 S GPS Common Source Power Gain PO = 6W 10 dB η Drain Efficiency VDS = 7.2V 50 % VSWR Load Mismatch Tolerance f = 500MHz 20:1 — IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.5A Ciss Input Capacitance VDS = 0 Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: VGS = –5V f = 1MHz 40 120 pF f = 1MHz 80 pF f = 1MHz 8 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Max. 3°C / W Prelim. 7/99 D1213UK 10 P out 8 80 6 60 4 40 f = 500MHz Idq = 0.5A V ds = 7.2V 2 0 11 8 10 P out 0 0.5 1 1.5 P in W f = 500MHz Idq = 0.5A V ds = 7.2V 6 Drain Efficiency W W 10 100 % 4 2 9 8 Gain dB 7 20 0 0 0 2.5 2 0.5 1 1.5 2 6 2.5 P in W Pout Drain Efficiency Pout Gain Figure 1 – Power Output and Efficiency vs. Power Input. Figure 2 – Power Output & Gain vs. Power Input. -15 -20 D1213UK -25 OPTIMUM SOURCE AND LOAD IMPEDANCE IMD3 dBc f 1 = 500.0 MHz f 2 = 500.1 MHz V ds = 7.2V Idq = 0.5A -30 -35 -40 -45 0 2 4 6 8 10 Frequency MHz 500 ZS ZL Ω Ω 2.3 - j0.4 2.1 - j1.9 P out W PEP Figure 3 – IMD vs. Output Power. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 7/99 D1213UK Typical S Parameters ! VDS = 7.2V IDQ = 0.2A # MHZ S MA R 50 !Freq MHz 70 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Semelab plc. S11 mag 0.69 0.74 0.82 0.86 0.89 0.90 0.91 0.92 0.93 0.93 0.93 0.93 0.93 0.92 0.92 0.91 0.92 0.94 0.95 0.93 ang -147 -153 -161 -167 -172 -176 -179 178 174 171 168 164 162 158 155 153 151 148 144 140 S21 mag 6.8 4.5 2.5 1.6 1.2 1.0 0.7 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.4 ang 68 59 47 42 35 33 27 26 23 21 20 15 18 16 21 23 29 29 31 29 S12 mag 0.021 0.017 0.015 0.024 0.037 0.052 0.064 0.082 0.095 0.116 0.130 0.148 0.159 0.173 0.182 0.189 0.207 0.235 0.275 0.308 ang -1 10 50 78 83 87 82 82 80 77 73 66 66 60 58 56 59 59 56 52 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] S22 mag 0.77 0.79 0.84 0.87 0.89 0.90 0.91 0.92 0.93 0.93 0.94 0.94 0.95 0.94 0.95 0.96 0.96 0.95 0.93 0.92 ang -160 -163 -167 -169 -171 -173 -175 -177 -178 -179 180 178 177 177 176 175 173 171 170 168 Prelim. 7/99