TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. FEATURES • SIMPLIFIED AMPLIFIER DESIGN 5.08 (0.200) typ. 2.54 (0.100) 2 1 • SUITABLE FOR BROAD BAND APPLICATIONS 3 • LOW Crss • SIMPLE BIAS CIRCUITS 0.66 (0.026) 1.14 (0.045) • LOW NOISE 0.71 (0.028) 0.86 (0.034) • HIGH GAIN – 13 dB MINIMUM 45˚ TO-39 PACKAGE PIN1 – DRAIN PIN2 – GATE PIN3 – SOURCE APPLICATIONS • VHF COMMUNICATIONS from DC to 400MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 29W 65V ±20V 2A –65 to 150°C 200°C Prelim. 3/97 D2008UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit VGS = 0 ID = 10mA VDS = 28V VGS = 0 2 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.4A GPS Common Source Power Gain PO = 5W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 400MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 0.2A 65 1 V 0.36 S 13 dB 40 % 20:1 — Ciss Input Capacitance VDS = 0 VGS = –5V f = 1MHz 20 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 11 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 1 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 6.0°C / W Prelim. 3/97