TetraFET D2282UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW – 6V – 1GHz SINGLE ENDED 0 .3 2 0 .2 4 0 .1 0 0 .0 2 16˚ m ax. 13˚ 1 .7 0 m ax. FEATURES 10˚ m ax. • SIMPLIFIED AMPLIFIER DESIGN 6 .7 6 .3 3 .1 2 .9 • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS 4 3 .7 7 .3 3 .3 6 .7 1 2 3 • LOW NOISE (Typical < 2dB NF) • HIGH GAIN – 8dB MINIMUM • SURFACE MOUNT 1 .0 5 0 .8 5 0 .8 0 0 .6 0 2 .3 0 APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 2.5 GHz 4 .6 0 SOT–223 PIN 1 GATE PIN 2 DRAIN PIN 3 SOURCE PIN 4 DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2W 40V ±20V 400mA –65 to 125°C 150°C Prelim. 7/96 D2282UK SEME LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS Drain–Source Breakdown VGS = 0 Voltage ID = 10mA Zero Gate Voltage VDS = 12.5V Drain Current VGS = 0 Gate Leakage Current VGS = 20V VDS = 0 ID = 10mA VDS = VGS ID = 0.2A VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* VDS = 10V GPS Common Source Power Gain PO = 750mW η Drain Efficiency VDS = 6V VSWR Load Mismatch Tolerance f = 1GHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance * Pulse Test: VDS = 0V IDQ = 75mA VGS = –5V VGS = 0 f = 1MHz VDS = 12.5V Max. Unit 40 f = 1MHz VDS = 12.5V Typ. VGS = 0 f = 1MHz 1 V 1 mA 1 µA 5 V 0.18 mhos 8 dB 40 % 10:1 — 12 10 pF 1 Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 70°C / W Prelim. 7/96