LED780-PD010-40D52 v 1.1 19.09.2014 LED780-PD010-40D52 consists of a GaAlAs LED 780 nm and a Si-PD mounted onTO-18 stem hermetically sealed with a glass flat can, and is designed to monitor reflected light through detector for controlling its own output power. Specifications Product Name: LED Lamp with PD Monitor Type No.: LED780-PD010-40D52 Chip material: GaAlAs , Si (PIN) Peak wavelength: 780 nm Package: Stem TO-18 Lens: Ø5 2.4 Flat Glass Can: Metal Can (Gold Plate ) Absolute Maximum Ratings [Ta=25°C] Device Item Symbol Maximum Rated Unit PD 200 mW LED Power Dissipation LED Forward Current IF 100 mA LED Pulse Forward Current IFP 500 A LED Reverse Voltage VR 5 V PD Reverse Voltage VR 100 V Operating Temperature TCASE -20 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSLD 260 °C Pulse Forward Current condition: Duty = 1%, tw = 10 µs Soldering condition: Soldering condition must be completed within 3 seconds at 250°C Electro-Optical Charactaristics [Ta=25°C] Item Symbol Condition Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA Radiant Intensity IE IF=50mA 2.5 5.0 Peak Wavelength λP IF=50mA 765 780 Half Width ∆λ IF=50mA 35 nm Viewing Half Angle φ IF=50mA ±55 deg. Rise Time tR IF=50mA 60 ns Fall Time tF IF=50mA 40 ns Output Current IL VR=0V Dark Current ID VR=10V Min. 3.0 250 Typ. Max. 1.70 2.00 V 10 uA 6.0 Unit mW mW/sr 795 500 nm uA 10 nA Total Radiated Power is measured by Photodyne #500 © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice www.roithner-laser.com 1